A capacitor having improved linear properties is provided. The capacitor is compatible with manufacturing processes of components which function using BAW. The capacitor comprises a first and a second electrode (E1, E2) in a first electrically conductive layer and a third electrode (E3) in a second electric layer. A dielectric layer (DL) is arranged between the electrically conductive layers. The first electrode (E1) and the second electrode (E2) are the terminal electrodes of the capacitor.

A piezoelectric vibrator according to the invention has a base, an integrated circuit element, and a piezoelectric vibration element. The base has internal terminal pads, and external terminals including an AC output terminal. The base includes rectangular ceramic substrate layers stacked in at least three layers, each of which has castellations formed at four corners. Among the internal terminal pads, internal terminal pads for the integrated circuit element and internal terminal pads for the piezoelectric vibration element are connected to each other by externally exposed wiring patterns formed on upper surfaces of the castellations at the corners of the ceramic substrate constituting a middle layer.

A vibrator device includes a semiconductor substrate, a base, a vibrating element, and a lid. The semiconductor substrate has a first surface and a second surface which is in a front-back relationship with the first surface. The base includes an integrated circuit disposed on a first surface or a second surface. The vibrating element is electrically coupled to the integrated circuit and is disposed on the first surface side. The lid is joined to the base at a joining portion of the base to accommodate the vibrating element. The integrated circuit includes a passive element, and the passive element is disposed such that at least a part of the passive element overlaps with the joining portion in a plan view from a direction orthogonal to the first surface.

A vibration device includes a base including a semiconductor substrate and through electrodes that pass through the portion between first and second surfaces of the semiconductor substrate, and a vibrator fixed to the first surface via an electrically conductive joining member. The following components are placed at the second surface: an oscillation circuit that is electrically coupled to the vibrator via the through electrodes and generates an oscillation signal by causing the vibrator to oscillate, a temperature sensor circuit, a temperature compensation circuit that performs temperature compensation on the oscillation signal, and an output buffer circuit that outputs a clock signal based on the oscillation signal. Dsx1<Dbx1, a distance between the output buffer circuit and one of the through electrodes is Dbx1, a distance between the temperature sensor circuit and the other through electrode is Dsx1.

A multi-piece wiring substrate includes a matrix substrate including first and second insulating layers, and interconnection substrate regions arranged in a matrix. The matrix substrate includes dividing grooves opposing each other and disposed along boundaries between the interconnection substrate regions, and through-holes penetrating the matrix substrate in a thickness direction at positions where the dividing grooves are disposed. The inner surface conductor gradually decreases in thickness from a thick portion in a middle of the inner surface conductor, to thin portions disposed on a side of a boundary between the first and second insulating layers and on a first main surface side, and includes inclination portions each of which gradually increases in thickness from a boundary between corresponding one of the dividing grooves and the inner surface conductor to an inner surface of the inner surface conductor, in vertical sectional view.

An apparatus comprises a substrate, a dielectric disposed on the semiconductor substrate, an acoustic resonator disposed on the dielectric, and an electrical interconnect disposed in the dielectric and configured to transmit an electrical signal to or from at least one electrode of the acoustic resonator through a signal path disposed at least partially below a level of the acoustic resonator.

The invention combines two filter technologies on a single device using the same substrate there for. On this substrate a filter circuit is arranged that has a ladder-type or a lattice arrangement of series and parallel impedance elements to provide a hybrid filter having for example a band pass function. The impedance elements are chosen from BAW resonators and LC elements.

An elastic wave device includes a supporting substrate, an acoustic multilayer film on the supporting substrate, a piezoelectric substrate on the acoustic multilayer film, and an IDT electrode on the piezoelectric substrate. The acoustic multilayer film includes at least four acoustic impedance layers. The at least four acoustic impedance layers include at least one low acoustic impedance layer and at least one high acoustic impedance layer having an acoustic impedance higher than the low acoustic impedance layer. The elastic wave device further includes a bonding layer provided at any position in a range of from inside the acoustic impedance layer, which is the fourth acoustic impedance layer from the piezoelectric substrate side towards the supporting substrate side, to an interface between the acoustic multilayer film and the supporting substrate.

A vibrator device includes a semiconductor substrate, a base, a vibrating element, and a lid. The semiconductor substrate has a first surface and a second surface which is in a front-back relationship with the first surface. The base includes an integrated circuit disposed on a first surface or a second surface. The vibrating element is electrically coupled to the integrated circuit and is disposed on the first surface side. The lid is joined to the base at a joining portion of the base to accommodate the vibrating element. The integrated circuit includes a passive element, and the passive element is disposed such that at least a part of the passive element overlaps with the joining portion in a plan view from a direction orthogonal to the first surface.

An elastic wave device includes a support substrate, a polycrystalline nanodiamond layer provided directly or indirectly on the support substrate, at least one inorganic material layer provided on the polycrystalline nanodiamond layer, a piezoelectric body provided directly or indirectly on the at least one inorganic material layer, and an IDT electrode provided directly or indirectly on the piezoelectric body. The piezoelectric body propagates an elastic wave at a higher velocity than the polycrystalline nanodiamond layer propagates a bulk wave, and at a lower velocity than the at least one inorganic material layer propagates a bulk wave. The polycrystalline nanodiamond layer has a percentage of sp3 bonds of about 50% or more.