Hybrid filters and more particularly filters having acoustic wave resonators (AWRs) and lumped component (LC) resonators and packages therefor are described. In an example, a packaged filter includes a package substrate, the package substrate having a first side and a second side, the second side opposite the first side. A first acoustic wave resonator (AWR) device is coupled to the package substrate, the first AWR device comprising a resonator. A plurality of inductors is in the package substrate.

A radio frequency (RF) front-end (RFFE) device includes a die having a front-side dielectric layer on an active device. The active device is on a first substrate. The RFFE device also includes a microelectromechanical system (MEMS) device. The MEMS device is integrated on the die at a different layer than the active device. The MEMS device includes a cap layer composed of a cavity in the front-side dielectric layer of the die. The cavity in the front-side dielectric layer is between the first substrate and a second substrate. The cap is coupled to the front-side dielectric layer.

A structure and method for integrating a crystal resonator with a control circuit are disclosed. The crystal resonator is integrated with both the control circuit (110) and a semiconductor die (900) on a single device wafer (100) through forming a piezoelectric vibrator (500) on, and bonding the semiconductor die (900) to, a back side of the device wafer (100). This allows an increased degree of integration of the crystal resonator and on-chip modulation of its parameters. Compared with traditional crystal resonators, the disclosed crystal resonator is more compact in size and hence less power-consuming.

A substrate that includes an encapsulation layer, a first acoustic resonator, a second acoustic resonator, at least one first dielectric layer, a plurality of first interconnects, at least one second dielectric layer, and a plurality of second interconnects. The first acoustic resonator is located in the encapsulation layer. The first acoustic resonator includes a first piezoelectric substrate comprising a first thickness. The second acoustic is located in the encapsulation layer. The second acoustic resonator includes a second piezoelectric substrate comprising a second thickness that is different than the first thickness. The at least one first dielectric layer is coupled to a first surface of the encapsulation layer. The plurality of first interconnects is coupled to the first surface of the encapsulation layer. The plurality of first interconnects is located at least in the at least one first dielectric layer.

A filter device, an RF front-end device and a wireless communication device are provided. The filter device includes a substrate, a passive device and at least one resonance device, wherein the passive device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the at least one resonance device is located on the second side. The RF filter device formed by integrating the resonance device (such as an SAW or BAW resonance device) and the passive device (such as an IPD) can broaden the pass-band width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

An elastic wave device includes a piezoelectric layer including a first main surface and a second main surface facing the first main surface, an acoustically reflective layer stacked on the first main surface of the piezoelectric layer, an excitation electrode disposed on the piezoelectric layer, and a support layer. The acoustically reflective layer overlaps at least the excitation electrode in a plan view of the piezoelectric layer from the side of the second main surface. The support layer surrounds the acoustically reflective layer in a plan view of the piezoelectric layer from the side of the second main surface.

MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.

Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed.

A packaged acoustic wave filter component can include an acoustic wave device including a first piezoelectric layer and an interdigital transducer electrode on the first piezoelectric layer. A support layer may be included over the acoustic wave device, and the packaged hybrid filter component can also include a bulk acoustic wave resonator over the support layer. A cap layer may extend over and encapsulate the bulk acoustic wave resonator. One or more external vias may extend through the support layer and the underlying layers of the acoustic wave device to provide electrical communication with the packaged bulk acoustic wave generator.

An acoustic wave filter component can include a surface acoustic wave device including a first piezoelectric layer, an interdigital transducer electrode on the first piezoelectric layer, and an additional layer, such as a temperature compensation layer, over the interdigital transducer electrode. The acoustic wave filter component can also include a bulk acoustic wave resonator supported by the additional layer. The additional layer may be a layer on which a surface acoustic wave of the surface acoustic wave device will propagate. The bulk acoustic wave resonator may include an air cavity, where a shape of the air cavity is defined in part by the additional layer.