A film bulk acoustic resonator (FBAR) chip and package structure with improved power tolerance includes: a first substrate having a plurality of FBARs each having a bottom electrode, a piezoelectric material, and a top electrode, and first bonding pads connected to the bottom electrodes or the top electrodes of the FBARs; and a second substrate having a plurality of vias passing therethrough, second bonding pads located on one end surface of the vias facing the first substrate, and external connection pads located on the other end surface of the vias which does not face the first substrate, wherein the first substrate and the second substrate are bonded by means of bonding of the first bonding pads and the second bonding pads.

A vibrator device includes a package including a base that is a semiconductor substrate and a lid that is a semiconductor substrate and has a housing section, a vibrator element and a passive element housed in the housing section and placed at the base, an oscillation circuit placed at the base and electrically coupled to the vibrator element, and a circuit that is placed at the base or the lid, is electrically coupled to the passive element, and operates based on an oscillation signal from the oscillation circuit.

A vibrator (electronic device) includes: a vibrator element including vibrating arms; a base portion supporting the vibrator element and having a rectangular shape in a plan view; and a lid provided on the side of the vibrator element opposite to the base portion 3. Extending directions of long and short sides of the base portion and an extending direction of the vibrating arms cross each other. When an angle formed by the vibrating arms and a Y-axis direction is θ, the angle θ is more than 0° and less than 90°.

A piezoelectric device includes a piezoelectric vibrating piece and a base. The piezoelectric vibrating piece includes an excitation portion, a framing portion, a connecting portion, excitation electrodes, and extraction electrodes. The base includes a mounting terminal, a cutout portion formed on a side surface, and a cutout-portion electrode formed in the cutout portion. The cutout-portion electrode connects the mounting terminal to the extraction electrode. The extraction electrode includes a cutout-portion region connected to the cutout-portion electrode, an excitation-electrode connecting region connected to the excitation electrode, and an erosion preventing region disposed between the cutout-portion region and the excitation-electrode connecting region to prevent erosion by solder. The extraction electrode in the erosion preventing region is formed without containing gold (Au) and silver (Ag), and the extraction electrodes in the cutout-portion region and the excitation-electrode connecting region are formed containing at least one of gold (Au) and silver (Ag).

A quartz crystal resonator unit includes a quartz crystal substrate, first and second excitation electrodes, first and second conductive sealing members, and first and second exterior members. The first excitation electrode is disposed on a first main surface of the substrate with the first conductive sealing member surrounding the first excitation electrode. Similarly, the second excitation electrode is disposed on a second main surface of the substrate with the second conductive sealing surrounding the second excitation electrode. The first and second exterior members are bonded to the quartz crystal substrate with the first and second conductive sealing member respectively interposed therebetween and to cover the first and excitation electrodes, respectively. In a plan view of the first main surface of the substrate, at least part of the first conductive sealing member is located outward of the second conductive sealing member.

A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.

A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing methods are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and the second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film in this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing method are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film of this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

A resonator may include a first dielectric member, a second dielectric member, and a composite member. The first dielectric member may have a first cavity. The composite member may include a piezoelectric layer and may overlap at least one of the first dielectric member and the second dielectric member. At least one of the second dielectric member and the composite member may have a second cavity. The piezoelectric layer may be positioned between the first cavity and the second cavity. A projection of the first cavity in a direction perpendicular to a flat side of the first dielectric member and a projection of the second cavity in the direction may intersect each other to form a polygon. No two edges of the polygon may be parallel to each other.

Provided is a method for bonding wafers, which can bond the wafers to each other with high reliability while reducing the influence on the wafers. The method for bonding wafers includes the steps of: preparing a first wafer that has, on the surface thereof, a first metal layer with a first rigidity modulus, and a second wafer that has, on the surface thereof, a second metal layer with a second rigidity modulus higher than the first rigidity modulus; removing an oxide film at the surface of the second metal layer while an oxide film at the surface of the first metal layer is not removed; and bonding the surface of the first wafer to the surface of the second wafer.