Acoustic resonator devices and filters are disclosed. A piezoelectric plate is attached to a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A first conductor pattern is formed on a surface of the piezoelectric plate. The first conductor pattern includes interleaved fingers of an interdigital transducer disposed on the diaphragm, and a first plurality of contact pads. A second conductor pattern is formed on a surface of a base, the second conductor pattern including a second plurality of contact pads. Each pad of the first plurality of contact pads is connected to a respective pad of the second plurality of contact pads. A seal is formed between a perimeter of the piezoelectric plate and a perimeter of the base.

A piezoelectric vibrating device according to the present invention is provided with: a piezoelectric vibration plate having first and second driving electrodes respectively formed on main surfaces on both sides thereof, the piezoelectric vibration plate further having first and second mounting terminals that are respectively connected to the first and second driving electrodes. The piezoelectric vibrating device is also provided with first and second sealing members respectively joined to the main surfaces on both sides of the piezoelectric vibration plate in a manner that the first and second driving electrodes of the piezoelectric vibration plate are covered with these sealing members. At least one of the first and second sealing members includes a film made of a resin.

A method for packaging chips includes: flip-chip bonding a plurality of filter chips to be packaged on a substrate to be packaged; applying a first mold material layer on the filter chips to be packaged; applying a second mold material layer on a side of the first mold material layer away from the filter chip to be packaged, the first mold material layer and the second mold material layer forming a first mold layer; thinning the first mold material layer and the second mold material layer to expose substrates of the filter chips to be packaged, and thinning the substrates of the filter chips to be packaged to a preset thickness; applying a second mold layer on the exposed substrates of the filter chips to be packaged to obtain a mold structure; and cutting the mold structure into a plurality of particle chips.

According to some implementations, a radio-frequency (RF) module is disclosed, comprising a first substrate. The radio-frequency module also includes a radio-frequency device mounted on the first substrate, the radio-frequency device including a second substrate. In some embodiments, the second substrate includes a first side and a second side, a set of support structures implemented on the second side of the substrate, the set of support structures defining a mounting volume on the second side of the second substrate, and a component implemented within the mounting volume. The radio-frequency module may further comprise a first overmold structure encapsulating at least a portion of the set of support structures.

An electronic component includes: a first substrate; a second substrate that includes a functional element formed on a lower surface of the second substrate, the second substrate being mounted on the first substrate so that the functional element faces an upper surface of the first substrate across an air gap; and an insulating film that is located on the upper surface of the first substrate, overlaps with at least a part of the functional element in plan view, faces the functional element across the air gap, and has a film thickness that is more than half of a distance between a lower surface of the functional element and the upper surface of the first substrate.

A filter unit of a high-frequency module includes a plurality of SAW resonators connected in series between a first series connection terminal and a second series connection terminal, first shunt connection terminals, a second shunt connection terminal, and a plurality of SAW resonators. A connection line interconnecting the SAW resonators is connected to the first shunt connection terminal through one of the SAW resonators. The first shunt connection terminal is connected to a ground through an inductor. A matching circuit is connected between the second series connection terminal and a second external connection terminal. The matching circuit is inductively or capacitively coupled to the inductor.

A filter package and method of manufacturing thereof is disclosed. The filter device package includes a first dielectric layer having an acoustic wave filter device attached thereto, the acoustic wave filter device comprising an active area and I/O pads. The filter device package also includes an adhesive positioned between the first dielectric layer and the acoustic wave filter device to secure the layer to the device, vias formed through the first dielectric layer and the adhesive to the I/O pads of the acoustic wave filter device, and metal interconnects formed in the vias and mechanically and electrically coupled to the I/O pads of the acoustic wave filter device to form electrical interconnections thereto, wherein an air cavity is formed in the adhesive between the acoustic wave filter device and the first dielectric layer, in a location adjacent the active area of the acoustic wave filter device.

In an elastic wave device, a plurality of elastic wave elements that include IDT electrodes are provided on a piezoelectric substrate, and a support layer that surrounds the elastic wave elements is provided on the piezoelectric substrate to define hollow portions in which the elastic wave elements are located. A cover member is stacked on the support layer, so that the hollow portions, in which the elastic wave elements are located, are provided, and the support layer includes a first support layer and a second support layer. The first support layer extends along an outer peripheral edge of the piezoelectric substrate, and the second support layer is located in a region surrounded by the first support layer and disposed around the elastic wave elements so as to have the hollow portions, in which the elastic wave elements are located. A hollow path is provided between the first support layer and the second support layer and arranged to allow communication between at least two of the hollow portions.

A crystal resonator device with a thermistor according to one or more embodiments may include: a package including an upper housing and a lower housing; a crystal resonator plate housed in the upper housing; a thermistor housed in the lower housing; and a lid hermetically sealing the upper housing. Excitation electrodes of the crystal resonator plate are each constituted of a plurality of metal film layers, and a main layer thereof is made of Au. The thermistor has a single plate-like thermistor element as a base material. Working electrodes of the thermistor are each constituted of a plurality of metal film layers, and a main layer thereof is made of Au.

An electronic device and a method of forming the same are disclosed. An emitter resonator and a reception cap cavity are formed on and in a first wafer, and an emitter cap cavity and a reception resonator are formed in and on a second wafer. After bonding together the first and second wafers, an emitter filter is formed in an emission region, and a reception filter is formed in a receiving region. The method provided in the present invention not only can simplify the fabrication process of the device and improve its accuracy and stability, but also facilitates integration of the emitter and receives filters in a same chip, which results in a higher degree of integration of the device and a more compact package size thereof.