Multiplexers are disclosed. A multiplexer can include a first filter and a second filter that are coupled to a common node. The second filter can include a first type of acoustic wave resonators (e.g., bulk acoustic wave resonators) and a series acoustic wave resonator of a second type (e.g., a surface acoustic wave resonator) that is coupled between the acoustic wave resonators of the first type and the common node. The first filter can provide a single-ended radio frequency signal. In certain embodiments, the first filter can be a receive filter and the second filter can be a transmit filter.

A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.

An acoustic resonator forms a component of an FBAR filter that includes a trap-rich layer to avoid parasitic conduction by degrading carrier lifetimes of a free charge carriers. The acoustic resonator has a first electrode, a second electrode disposed parallel to the first planar portion and a piezoelectric layer disposed between and contacting both the first and second planar electrodes. A silicon-based a support layer is bonded to the second electrode and includes a trap region. The acoustic resonator may be manufactured by (a) depositing the trap region on the support layer; (b) oxidizing a surface of the trap region; (c) depositing a bonding layer on the oxidized surface of the trap region; (d) bonding a first electrode to the bonding layer; (e) contacting a first side of a piezoelectric layer to the electrode; and (f) contacting a second side of the piezoelectric layer a second electrode.

A method for packaging a chip and a chip packaging structure. A passivation layer is provided on bonding pads of a wafer, a first metal bonding layer is formed on the passivation layer, and a second metal bonding layer is formed on a substrate. The substrate and the wafer are bonded via the first metal bonding layer and the second metal bonding layer, and are packaged as a whole. A first shielding layer is provided on the substrate, and the first shielding layer is in contact with the second metal bonding layer. After the wafer and the substrate are bonded, the wafer is subject to half-cutting to expose the first metal bonding layer. Then, the second shielding layer electrically connected to the first metal bonding layer is formed.

The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved. The first supporting part is matched with the second organic material layer to form a second acoustic reflection structure, so that when part of acoustic waves are not reflected back by the first acoustic reflection structure and are transmitted to the second acoustic reflection structure, the acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is further reduced, and the performance of the acoustic device is improved.

Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components.

A method and structure for single crystal acoustic electronic device. The device includes a substrate having an enhancement layer formed overlying its surface region, a support layer formed overlying the enhancement layer, and an air cavity formed through a portion of the support layer. Single crystal piezoelectric material is formed overlying the air cavity and a portion of the enhancement layer. Also, a first electrode material coupled to the backside surface region of the crystal piezoelectric material and spatially configured within the cavity. A second electrode material is formed overlying the topside of the piezoelectric material, and a dielectric layer formed overlying the second electrode material. Further, one or more shunt layers can be formed around the perimeter of a resonator region of the device to connect the piezoelectric material to the enhancement layer.

There is provided a piezoelectric vibrator element which is excellent in vibration characteristics, high in quality, and capable of suppressing a frequency fluctuation after a frequency adjustment. The piezoelectric vibrator element is provided with a piezoelectric plate having a pair of vibrating arm parts, an electrode film disposed on obverse and reverse surfaces of the piezoelectric plate, and weight metal films for a frequency adjustment disposed on the electrode film at the obverse surface side in the vibrating arm parts. The reverse surface of the vibrating arm part has a reverse side exposure part from which the piezoelectric plate is exposed. The obverse surface of the vibrating arm part has an obverse side exposure part from which the weight metal film and the electrode film are removed, and from which the piezoelectric plate is exposed. A whole of the obverse side exposure part overlaps the reverse side exposure part at a distance from the electrode film on the reverse surface viewed from a thickness direction of the piezoelectric plate.

A multi-stage matching network filter circuit device. The device comprises bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground node. A first matching network circuit is coupled to the input node. A second matching network circuit is coupled to the output node. A ground connection network circuit coupled to the ground node. The first or second matching network circuit can include an inductive ladder network including a plurality of series inductors in a series configuration and a plurality of grounded inductors wherein each of the plurality of grounded inductors is coupled to the connection between each connected pair of series inductors. The inductive ladder network can include one or more LC tanks, wherein each of the one or more LC tanks is coupled between a connection between a series inductor and a subsequent series inductor, which is also coupled to a grounded inductor.

A method for manufacturing a packaged acoustic wave component includes forming or providing a cap substrate, forming a metal layer on a surface of the cap substrate, marking the metal layer with one or more indicia and bonding the cap substrate to a device substrate that has an acoustic wave device on a surface thereof. The metal layer is paced from and faces the acoustic wave device.