An acoustic wave device includes a support substrate made of silicon, a piezoelectric body provided directly or indirectly on the support substrate, the piezoelectric body including a pair of main surfaces facing each other, and an interdigital transducer electrode provided directly or indirectly on at least one of the main surfaces of the piezoelectric body, a wave length that is determined by an electrode finger pitch of the interdigital transducer electrode being λ. An acoustic velocity V.sub.Si=(V.sub.1).sup.1/2 of bulk waves that propagate in the support substrate, which is determined by V.sub.1 out of solutions V.sub.1, V.sub.2, V.sub.3 of x derived from the expression, Ax.sup.3+Bx.sup.2+Cx+D=0, is higher than or equal to about 5500 m/s.

A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.

A package that includes an acoustic device, a frame coupled to the acoustic device and a cap substrate coupled to the acoustic device through the frame. The acoustic device includes a substrate and an acoustic element coupled to the substrate. The cap substrate includes an inductor. The cap substrate is configured as a cap for the acoustic device. The package includes a cavity located between the acoustic device and the cap substrate. The frame may include a polymer frame.

An acoustic wave device includes a piezoelectric substrate, functional elements, an outer peripheral support layer, a cover portion, and a protective layer covering the cover portion. A hollow space is defined by the piezoelectric substrate, the outer peripheral support layer, and the cover portion, and the functional elements are disposed in the hollow space. The acoustic wave device further includes an under bump metal layer, a wiring pattern, and a through-electrode that connects these elements. In the protective layer, a through-hole to be filled with a conductor to electrically connect a solder ball and the under bump metal layer is provided. The outer peripheral support layer includes a protruding portion protruding to the hollow space. When the acoustic wave device is seen in plan view, at least a portion of the through-hole overlaps the hollow space, and an end portion of the protruding portion overlaps an inner region of the through-hole.

A multi-level stacked AW filter package including a first acoustic wave (AW) filter stacked on a second AW filter employs semiconductor fabrication methods and structures, including a metallization layer comprising interconnects to couple a contact surface to the second AW filter. Each AW filter includes an AW filter circuit on a semiconductor substrate. A second substrate disposed on a frame on the substrate protects the AW filter circuit. In a multi-level AW filter package, the second substrate of the first AW filter comprises a glass substrate with a similar expansion rate as the semiconductor substrate. The interconnects coupling the second AW filter to the contact surface are disposed on insulators on the side wall surfaces of the semiconductor substrates of the first AW filter for isolation. In a stacked AW filter package comprising a single AW filter, the interconnects couple the contact surface to the AW filter.

A high-frequency apparatus includes a first device and a second device, and a mounting substrate on which the first and second devices are mounted. At least the second device is an acoustic wave device including a piezoelectric substrate and a functional element. The first device and the second device are adjacent to or in a vicinity of each other on the mounting substrate. A coefficient of linear expansion of a substrate of the first device is lower than a coefficient of linear expansion of the mounting substrate, and a coefficient of linear expansion of the piezoelectric substrate of the second device is higher than the coefficient of linear expansion of the mounting substrate.

A method of making a micro-module structure comprises providing a substrate, the substrate having a substrate surface and comprising a substrate post protruding from the substrate surface. A component is disposed on the substrate post, the component having a component top side and a component bottom side opposite the component top side, the component bottom side disposed on the substrate post. The component extends over at least one edge of the substrate post. One or more component electrodes are disposed on the component.

An electronic component enclosed in a protective packaging, the protective packaging comprises a gel material and an electrically conductive filler material. The electrically conductive filler material is mixed into the gel material for formulating a package filler. The package filler is configured to form a protective layer over the electronic component for attenuating at least part of an electromagnetic wave input to the electronic component according to input wave strength.

A surface acoustic wave device includes a piezoelectric substrate, a supportive layer, a cover layer and a pillar bump. The supportive layer is disposed on the piezoelectric substrate and around a transducer, the cover layer covers the supportive layer, and the pillar bump is located in a lower via hole of the supportive layer and an upper via hole of the cover layer. The upper via hole has a lateral opening located on a lateral surface of the cover layer, and the pillar bump in the cover layer protrudes from the lateral surface of the cover layer via the lateral opening.

A filter device includes a substrate having piezoelectricity, a first filter including an IDT electrode disposed on the substrate, a terminal electrode disposed on the substrate, a first wiring electrode disposed on the substrate and connecting the first filter and a terminal electrode, and a dielectric film disposed above the substrate to cover the IDT electrode. At least a portion of the first wiring electrode is not covered with the dielectric film.