H03H9/14541

ACOUSTIC WAVE DEVICE WITH MULTI-LAYER INTERDIGITAL TRANSDUCER ELECTRODE HAVING LAYER OF MORE DENSE MATERIAL OVER LAYER OF LESS DENSE MATERIAL
20220271730 · 2022-08-25 ·

An acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode disposed over the piezoelectric layer. The interdigital transducer electrode is thicker in a center region of the interdigital transducer electrode than in a gap region of the interdigital transducer electrode to thereby reduce a mass loading of the interdigital transducer electrode in the gap region. The interdigital transducer electrode has a layer of more dense material disposed of a layer of less dense material.

ACOUSTIC WAVE DEVICE WITH MULTI-LAYER INTERDIGITAL TRANSDUCER ELECTRODE
20220271733 · 2022-08-25 ·

An acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode disposed over the piezoelectric layer. The interdigital transducer electrode is thicker in a center region of the interdigital transducer electrode than in a gap region of the interdigital transducer electrode to thereby reduce a mass loading of the interdigital transducer electrode in the gap region. The interdigital transducer electrode has a layer of less dense material disposed of a layer of more dense material.

ACOUSTIC WAVE FILTER WITH MULTIPLE ACOUSTIC WAVE DEVICES ON A SUBTRATE
20220271734 · 2022-08-25 ·

An acoustic wave filter includes a piezoelectric layer. A first acoustic wave device includes a portion of the piezoelectric layer and a first multi-layer interdigital transducer electrode disposed over the first portion of the piezoelectric layer. Additional acoustic wave devices are coupled to the first acoustic wave device, the additional acoustic wave devices including a second portion of the piezoelectric layer and a plurality of multi-layer interdigital transducer electrodes disposed over the second portion of the piezoelectric layer. At least one of the plurality of multi-layer interdigital transducer electrodes includes a layer that is thinner than a corresponding layer of the same material of the first multi-layer interdigital transducer electrode of the first acoustic wave device.

Suppression of spurious signals in surface acoustic wave devices
11444599 · 2022-09-13 · ·

An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate. The IDT electrodes having gap regions, edge regions, and center regions. A duty factor of the IDT electrodes in the edge regions is greater than the duty factor of the IDT electrodes in the center regions. A first dielectric film is disposed above the IDT electrodes and an upper surface of the substrate. The first dielectric film has a greater thickness in portions of the center regions than in portions proximate the gap regions.

DMS FILTER, ELECTROACOUSTIC FILTER AND MULTIPLEXER
20220103161 · 2022-03-31 ·

An improved DMS filter with electrode structures between a first port and a second port is provided. Wiring junctions are realized in multilayer crossing with dielectric material in between. There are insulating patches (L2) between crossing conductor layers (L1,L3). Signal wirings may be realized with multiple conductor layers (L1, L3) to reduce wiring resistance and the upper conductor layer (L3) of the signal wiring may partly overlap the insulating patches (L2). The insulating patches (L2) may extend over the acoustic path to achieve temperature compensation.

Multiplexer, high-frequency front-end circuit, and communication device
11296676 · 2022-04-05 · ·

A first filter of a multiplexer has a ladder filter structure defined by acoustic wave resonators. An imaginary line obtained by connecting second ends of electrode fingers included in one comb-shaped electrode among a pair of comb-shaped electrodes of each resonator intersects a reference line that is a straight line extending in an acoustic wave propagation direction. When an angle defined by the reference line and the imaginary line of a first series resonator is represented by a first slant angle, an angle defined by the reference line and the imaginary line of a parallel resonator is represented by a second slant angle, and an angle defined by the reference line and the imaginary line of acoustic wave resonators is represented by a third slant angle, at least one of the first slant angle and the second slant angle is smaller than the third slant angle.

ACOUSTIC WAVE DEVICE
20220116017 · 2022-04-14 ·

An acoustic wave device includes first and second acoustic wave resonator units. In a first IDT electrode of the first acoustic wave resonator unit, an intersecting width region includes a central region and first and second low acoustic velocity regions at outer side portions of the central region. The first and second high acoustic velocity regions include openings along an acoustic wave propagation direction. In the second acoustic wave resonator unit, a second IDT electrode includes a central region and first and second low acoustic velocity regions at outer side portions in an intersecting width direction of the central region. At an outer side portion of the first low acoustic velocity region, openings are at a third busbar. At an outer side portion of the second low acoustic velocity region, openings are not provided for a fourth busbar.

SURFACE ACOUSTIC WAVE DEVICE AND FILTER DEVICE
20220116012 · 2022-04-14 ·

A surface acoustic wave device includes a piezoelectric substrate made of θ° rotated Y-cut X-propagation LiNbO.sub.3 having a cut angle θ, an IDT electrode on the piezoelectric substrate and including a plurality of electrode fingers, and a dielectric film on the piezoelectric substrate and covering the IDT electrode. The IDT electrode includes a main electrode layer and an auxiliary conductive layer. The main electrode layer is, compared to the auxiliary conductive layer, closer to a side of the piezoelectric substrate. The main electrode layer includes Pt as a main component. Where the film thickness of the main electrode layer is denoted as h, the film thickness of the dielectric film is denoted as H, and a wavelength determined by the electrode finger pitch of the IDT electrode is denoted as λ, the relationship in Formula (1) and Equation (2A) to Equation (2D) is satisfied.

Integrating predefined templates with open ticket functionality

Techniques and arrangements for integrating predefined templates with open ticket functionality. For instance, a merchant device can identify a type of transaction between a merchant and a customer, select a ticket type for the transaction based on the type of transaction, and select a transaction flow based on the ticket type. The merchant device can then generate an open ticket for the transaction based on the ticket type, and associated transaction flow with the open ticket. Additionally, the merchant device can generate a visual representation of data associated with the open ticket, where a layout of the data within the visual representation is based on the type of transaction and the transaction flow, and present the visual representation to the merchant. In some examples, the type of transaction is identified using received input. In some examples, the type of transaction is identified based on a group associated with the customer.

WIRING ELECTRODE
20220077377 · 2022-03-10 ·

A wiring electrode on a piezoelectric substrate includes layers including an adhesive layer in contact with the piezoelectric substrate, an outermost layer indirectly above the adhesive layer, a low-resistance layer between the adhesive layer and the outermost layer, including first and second principal surfaces, and having a lowest electric resistance among the layers, and a barrier layer between the low-resistance layer and the outermost layer. An outer peripheral edge of the second principal surface of the low-resistance layer is inside an outer peripheral edge of the barrier layer, and an outer peripheral edge of the adhesive layer is outside an outer peripheral edge of the low-resistance layer, in plan view.