Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. The interleaved fingers extend at an oblique angle to an Z crystalline axis of the piezoelectric plate.

A first filter of a multiplexer has a ladder filter structure defined by acoustic wave resonators. An imaginary line obtained by connecting second ends of electrode fingers included in one comb-shaped electrode among a pair of comb-shaped electrodes of each resonator intersects a reference line that is a straight line extending in an acoustic wave propagation direction. When an angle defined by the reference line and the imaginary line of a first series resonator is represented by a first slant angle, an angle defined by the reference line and the imaginary line of a parallel resonator is represented by a second slant angle, and an angle defined by the reference line and the imaginary line of acoustic wave resonators is represented by a third slant angle, at least one of the first slant angle and the second slant angle is smaller than the third slant angle.

An acoustic wave filter device includes a substrate, first and second acoustic impedance layers, a piezoelectric layer, first and second interdigital transducer electrodes, an input terminal, an output terminal, ground terminals, a series arm circuit, and a parallel arm circuits. The first interdigital transducer electrode at least partially overlaps the first acoustic impedance layer in the plan view. The second interdigital transducer electrode at least partially overlaps the second acoustic impedance layer in the plan view. The series arm circuit is provided on a first path connecting the input terminal and the output terminal and includes the first and second interdigital transducer electrodes. A conductive layer in the first acoustic impedance layer and a conductive layer in the second acoustic impedance layer are electrically insulated from each other.

An IDT electrode of a SAW element has a plurality of first dummy electrodes which extend from the first bus bar to the second bus bar side and have tips which face the tips of the plurality of second electrode fingers through a plurality of first gaps, and a plurality of second dummy electrodes which extend from the second bus bar to the first bus bar side and have tips which face the tips of the plurality of first electrode fingers through a plurality of second gaps. The plurality of first gaps and the plurality of second gaps are arranged to be inclined to the same side relative to the propagation direction of SAW. When the inclination angles of the first gaps and the second gaps relative to the propagation direction are a first angle A and a second angle B, the following are true: 10A26, and 10B26.

An elastic wave filter device includes a piezoelectric film, a high acoustic velocity support substrate in which an acoustic velocity of a propagating bulk wave is larger than an acoustic velocity of a main mode elastic wave propagating in the piezoelectric film, and IDT electrodes in contact with the piezoelectric film. A serial arm resonator and a parallel arm resonator are defined by the IDT electrodes such that, a direction in which tips of first and second electrode fingers are connected defines a tilt angle with respect to a propagation direction of elastic waves excited by the IDT electrodes. A tilt angle of the serial arm resonator is different from a tilt angle of the parallel arm resonator.

A filter device includes a longitudinally coupled resonator elastic wave filter that includes IDT electrodes including low acoustic velocity regions in outer side portions of center regions of the IDT electrodes and high acoustic velocity regions in outer side portions of the low acoustic velocity regions in a direction orthogonal or substantially orthogonal to an elastic wave propagation direction, and defines and functions as a first bandpass filter, and elastic wave resonators that are electrically connected to the longitudinally coupled resonator elastic wave filter.

An elastic wave device includes IDT electrodes stacked on a piezoelectric thin film. The IDT electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers. A line connecting the distal ends of the first electrode fingers or the distal ends of the second electrode fingers extends obliquely with respect to a propagation direction of an elastic wave at an oblique angle . The oblique angle is about 0.4 or more and about 10 or less.

A multiplexer is provided on a mounting substrate and includes a duplexer with first and second bandpass filters, and at least one bandpass filter other than the duplexer. The first and second bandpass filters respectively include first and second multilayer bodies that are different components. Configurations of the first and second multilayer bodies are different from each other such that a frequency range of high-order mode spurious radiation generated in the duplexer and a pass band of the bandpass filter other than the duplexer is different from each other.

In an acoustic wave element of the present invention, a first imaginary line connecting end portions of the plurality of first electrode fingers in the IDT electrode on the second bus bar side and a second imaginary line connecting end portions of the plurality of second electrode fingers in the IDT electrode on the first bus bar side are within ranges of 2 degrees<A10 degrees and 2 degrees<B10 degrees where an angle formed by the first imaginary line and the propagation direction is the first inclination angle A and an angle formed by the second imaginary line and the propagation direction is the second inclination angle B.

A multiplexer is provided on a mounting substrate and includes a duplexer with first and second bandpass filters, and at least one bandpass filter other than the duplexer. The first and second bandpass filters respectively include first and second multilayer bodies that are different components. Configurations of the first and second multilayer bodies are different from each other such that a frequency range of high-order mode spurious radiation generated in the duplexer and a pass band of the bandpass filter other than the duplexer is different from each other.