A level shifter device and an operation method thereof are provided. The level shifter device includes a buffer, a first level shifter and a dynamic voltage regulation circuit. The buffer includes an output terminal. The first level shifter has a first input terminal coupled to the output terminal of the buffer. The first level shifter has a reference voltage terminal coupled to an analog reference voltage. The dynamic voltage regulation circuit generates a dynamic voltage having a level varied according to a bounce of the analog reference voltage, and provides the dynamic voltage to at least one of the buffer as a power supply and the first level shifter as a bias voltage.

A voltage driver circuit for an output stage of an operational amplifier, or other circuits, includes a level shifter and an output driver including a source follower and a common source amplifier in a push-pull configuration. The level shifter generates a node voltage as a function of an input voltage on the input node. The output driver including a first transistor having a control terminal receiving the node voltage, and connected between a supply voltage and an output node, and a second transistor having a control terminal receiving the input voltage from the input node, and connected between the output node and a reference voltage, wherein the first and second transistors have a common conductivity type.

Provided are a device for adjusting an ultrasonic resonance frequency and a method of controlling the same. A device according to an embodiment of the present disclosure includes a circuit board configured to determine and output a resonance frequency. In addition, the device includes a frequency adjustor connected to at least one of a plurality of circuits mounted on the circuit board.

A realignment ring-cell circuit is disclosed. The circuit includes a single-to-differential unit, an OR gate, an AND gate, a first P-type metal-oxide-semiconductor transistor, and a first N-type metal-oxide-semiconductor transistor. The single-to-differential unit has an input configured to receive a realignment signal, a first output for outputting a first differential output and a second output for outputting a second differential output. The first output for outputting is a first input to the OR gate. The second output for outputting is a first input to the AND gate. A gate of the P-type metal-oxide-semiconductor transistor is electrically connected to an output of the OR gate. A gate of the N-type metal-oxide-semiconductor transistor is electrically connected to an output of the AND gate. A drain of the P-type metal-oxide-semiconductor transistor and a drain of the N-type metal-oxide-semiconductor transistor are electrically connected to each other and are further electrically connected to a second input of the OR gate and a second input of the AND gate.

A latch circuit includes first and second NAND circuits and first and second capacitive elements. The first NAND circuit has a first input node into which a first signal is input. The second NAND circuit has a first input node into which a second signal is input, a second input node which is connected to an output node of the first NAND circuit, and an output node which is connected to a second input node of the first NAND circuit. The first capacitive element has one end connected to the first input node of the first NAND circuit and has another end connected to the output node of the first NAND circuit. The second capacitive element has one end connected to the first input node of the second NAND circuit and has another end connected to the output node of the second NAND circuit.

A low voltage differential signaling circuit includes an output driver circuit configured to provide a differential signal pair based on a first signal and a second signal. A peak detect circuit is coupled to receive the differential signal pair and configured to provide a feedback signal based on the differential signal pair and the first and second signals. An amplifier circuit has a first input coupled to the peak detect circuit, a second input coupled to receive a reference voltage, and an output coupled to provide a bias voltage to the output driver circuit.

A realignment ring-cell circuit is disclosed. The circuit includes a single-to-differential unit, an OR gate, an AND gate, a first P-type metal-oxide-semiconductor transistor, and a first N-type metal-oxide-semiconductor transistor. The single-to-differential unit has an input configured to receive a realignment signal, a first output for outputting a first differential output and a second output for outputting a second differential output. The first output for outputting is a first input to the OR gate. The second output for outputting is a first input to the AND gate. A gate of the P-type metal-oxide-semiconductor transistor is electrically connected to an output of the OR gate. A gate of the N-type metal-oxide-semiconductor transistor is electrically connected to an output of the AND gate. A drain of the P-type metal-oxide-semiconductor transistor and a drain of the N-type metal-oxide-semiconductor transistor are electrically connected to each other and are further electrically connected to a second input of the OR gate and a second input of the AND gate.

A receiving device may include a buffer, a summer circuit, a first delay cell, and a second delay cell. The buffer may receive an external signal. The summer circuit may sum an output of the buffer, a first feedback signal, and a second feedback signal. The first delay cell may generate the first feedback signal by delaying an output of the summer circuit. The second delay cell may generate the second feedback signal by delaying the first feedback signal. The delay amounts of the first and second delay cells may be set based on a delay control voltage.

A semiconductor apparatus may include a mode control circuit configured to output differential output signals which swing in a current mode logic (CML) area and a first control signal, in response to a power-down mode signal; a first circuit unit configured to be provided with the differential output signals, and operate in a power-down mode; and a second circuit unit configured to be provided with the differential output signals, and be interrupted in its operation in the power-down mode.

The disclosure relates to a data level shifter circuit including a boost circuit configured to generate a boosted input data signal based on a transition of an input data signal; a first input transistor including a first control signal configured to receive the input data signal; a second input transistor including a second control terminal configured to receive the boosted input data signal, wherein the first and second input transistors are coupled in parallel between a node and a lower voltage rail; and a latch circuit configured to generate an output data signal based on the input data signal, wherein the latch circuit is coupled between an upper voltage rail and the node.