An integrated circuit includes first circuitry and sleep transistor circuitry. The first circuitry receives input signals and processes the input signals. The first circuitry also retains data in a sleep state that has low leakage. The sleep transistor circuitry is coupled to the first circuitry and receives a sleep signal that has a negative voltage. The sleep circuitry reduces power consumption of the first circuitry in the sleep state to have low leakage based on the sleep signal while retaining the data in the first circuitry.

When a signal of high amplitude is outputted, a drain-to-source voltage exceeding a withstand voltage may be applied. The semiconductor device according to the present invention includes a level shift circuit that outputs a high amplitude signal from the input of a low amplitude logical signal. The level shift circuit includes a series coupling circuit, a first gate control circuit coupled to a first power supply, a second gate control circuit coupled to a second power supply of a potential higher than the potential of the first power supply, and a potential conversion circuit arranged between the first gate control circuit and the series coupling circuit. The potential conversion circuit supplies a first level potential, which is lower than the potential of the first power supply and higher than the potential of the reference power supply, to a gate of an N-channel MOS transistor of the series coupling circuit.

A first current source and a third current source are coupled at a first output node. A second current source and a fourth current source are coupled at a second output node. Control terminals of a first transistor and a second transistor are coupled to the second output node. Control terminals of a third transistor and a fourth transistor are coupled to the first output node. The first transistor and a fifth transistor are coupled in series between a power terminal and the first output node. A sixth transistor and the second transistor are coupled in series between the first output node and a ground terminal. The third transistor and a seventh transistor are coupled in series between the power terminal and the second output node. An eighth transistor and the fourth transistor are coupled in series between the second output node and the ground terminal.

A high voltage level shifter includes a first high-voltage P-channel metal oxide semiconductor (HVPMOS) transistor, a second HVPMOS transistor, a discharge transistor having a first native high-voltage N-channel metal oxide semiconductor (HVNMOS) transistor and a first low-voltage N-channel metal oxide semiconductor (LVNMOS) transistor connected in series, and an avalanche transistor having a second HVNMOS transistor and a second LVNMOS transistor connected in series.

As disclosed herein, a level shift circuit includes devices that are responsive to an ESD signal for placing those devices in a specific condition in response to the ESD signal indicating an ESD event. In some embodiments, the devices are transistors in current paths that are placed in a condition such that during an ESD event, voltage differentials in the current paths across voltage domain boundaries do not damage the circuitry of the level shift circuit. In some embodiments, some of the same devices that are responsive to the ESD event are also responsive to a signal to that detects the absence of a power supply voltage of one of the domains and places those devices in a condition to disable the level shift circuit if the power supply voltage is not present.

A level shifter circuit is provided that uses a boosting circuit. The boosting circuit is configured to improve the operation of the level shifter circuit when the high voltages of voltage domains across the level shifter circuit are widely separated. A circuit apparatus includes a core level shifter circuit that changes a first voltage of an input signal to a second voltage of an output signal. The circuit apparatus further includes a first boosting circuit that is coupled to the core level shifter circuit and generates a first transient voltage applied to the core level shifter circuit when the input signal transitions from a low value to a high value. The circuit apparatus also includes a second boosting circuit that is coupled to the core level shifter circuit and generates a second transient voltage applied to the core level shifter circuit when the input signal transitions from a high value to a low value.

An electrostatic discharge circuit may include a control voltage generation circuit, an electrostatic detection circuit, a driving control circuit and a discharge driving circuit. The control voltage generation circuit may generate first to third control voltages through a division operation on a supply voltage. The electrostatic detection circuit may set a first setup voltage based on the first control voltage, and detect static electricity transferred through the first setup voltage. The driving control circuit may set a second setup voltage based on the second control voltage, and generate a driving control signal. The discharge driving circuit may set a third setup voltage based on the third control voltage, and perform a discharge operation on static electricity.

An input stage configured to differentially amplify an input signal and an output signal, a first current mirror and a second current mirror configured to receive a differential current from the input stage, an output stage including first and second output transistors, respectively including a gate connected to the first and second current mirrors, and a slew rate compensation circuit configured to (i) mirror a comparison current generated by comparing a voltage of a first input signal with a voltage of a second input signal, and (ii) provide the mirrored comparison current to the gate of the first or second output transistor.

In an example, an apparatus includes a level-shifting circuit and a ramp detector. The level-shifting circuit has a current choke and a transistor coupled across the current choke, the level-shifting circuit adapted to be coupled to a first voltage source. The ramp detector has a ramp detector input adapted to be coupled to the first voltage source and a ramp detector output coupled to the transistor, the ramp detector adapted to be coupled to a second voltage source.

An output driving circuit may include a pull-up-pull-down driver connected to a pad, a level shifter operating based on a first power voltage and a second power voltage that is greater than the first power voltage, level shifting a data signal to generate a first control signal, and applying the first control signal to the pull-up-pull-down driver, and a driver control logic operating based on the first power voltage, generating a second control signal based on the data signal, and applying the second control signal to the pull-up-pull-down driver.