Various implementations described herein are directed to an integrated circuit. The integrated circuit may include level shifting circuitry for translating an input signal from a first voltage domain to an output signal for a second voltage domain. The integrated circuit may include input logic circuitry for receiving multiple input signals and providing an inverted input signal to the level shifting circuitry based on the multiple input signals. The integrated circuit may include bypass switching circuitry for activating and deactivating the level shifting circuitry based on a bypass control signal and at least one of the multiple input signals.

According to one embodiment, in a level shift circuit, a first PMOS transistor is electrically connected at a gate to a first node to which a first signal having an amplitude to be a first power-supply potential is input, is electrically connected to a second node at a source, and is electrically connected at a drain to an output terminal from which a signal having an amplitude to be a second power-supply potential is output. The first NMOS transistor is electrically connected to the first node at a gate and is electrically connected to the output terminal at a drain. The second PMOS transistor is electrically connected to a node to be the second power-supply potential at a source, and is electrically connected to the second node at a drain. The potential adjusting circuit is electrically connected to at least the second node.

Methods and systems are provided for generating an oscillating signal for use as a clock in digital logic timing. The oscillating signal is generated via a differential RC relaxation oscillator including an oscillator core and biasing circuitry. The oscillator core may be configured such that the oscillating signal it generates is substantially sinusoidal or pseudo-sinusoidal and contains less harmonic content relative to a square wave signal. The biasing circuitry may be configured to have a reduced dependence on temperature so that the biasing values it provides vary less with temperature.

A low voltage level shifter that is suitable for use with subthreshold logic. In one embodiment, the low voltage level shifter includes first and second input transistors coupled to first and second input nodes, respectively, that receive complementary low voltage input signals. A circuit is coupled to the first and second input transistors and to first and second output nodes that generate complementary high voltage output signals. The circuit is configured to transmit a first current to the second output node when the first input transistor is activated, wherein the first current is substantially equal to current drawn by the first input transistor when it is activated. The circuit is also configured to transmit a second current to the first output node when the second input transistor is activated, wherein the second current is substantially equal to current drawn by the second input transistor when it is activated.

A low voltage level shifter that is suitable for use with subthreshold logic. In one embodiment, the low voltage level shifter includes first and second input transistors coupled to first and second input nodes, respectively, that receive complementary low voltage input signals. A circuit is coupled to the first and second input transistors and to first and second output nodes that generate complementary high voltage output signals. The circuit is configured to transmit a first current to the second output node when the first input transistor is activated, wherein the first current is substantially equal to current drawn by the first input transistor when it is activated. The circuit is also configured to transmit a second current to the first output node when the second input transistor is activated, wherein the second current is substantially equal to current drawn by the second input transistor when it is activated.

Apparatus and methods for radio frequency (RF) switch control are provided. In certain embodiments, a level shifter for an RF switch includes a first level-shifting n-type transistor, a first cascode n-type transistor in series with the first level-shifting n-type transistor between a negative charge pump voltage and a first output that provides a first switch control signal, a first level-shifting p-type transistor, a first cascode p-type transistor in series with the first level-shifting p-type transistor between a positive charge pump voltage and the first output, and a second cascode p-type transistor between a regulated voltage and a gate of the first level-shifting n-type transistor and controlled by a first switch enable signal.

A level shifter circuit uses standard n-channel and p-channel transistors except for a pair of Lateral-Diffusion Metal-Oxide-Semiconductor (LDMOS) transistors that have an added lateral diffusion under the gate between the source and the conduction channel, increasing the breakdown voltage. The source of each LDMOS transistor connects to a drain of a transient differential transistor that has its gate driven by a oneshot that generates a pulse after an input transition. After the pulse ends a holding differential transistor draws a smaller bias current from the LDMOS transistors. The source of each LDMOS transistor connects to the drain and gate of a p-channel sensing transistor that drives gates of mirror transistors generating mirrored currents to cross-coupled n-channel mirror transistors that drive both terminals of a bistable latch that holds the output using a floating ground between driver transistors of a Buck converter switched by the bistable latch.

A circuit includes a first transistor having first and second current terminals and a first control input, and a second transistor having third and fourth current terminals and a second control input. The third current terminal is coupled to the second current terminal at an intermediate node. In some cases, a third transistor is connected to the intermediate node to bias the intermediate rather than letting the intermediate node float. In other cases, a capacitor is connected to the intermediate node to reduce a negative voltage that might otherwise be present on the intermediate node.

Systems and methods are provided for a level shifter. A level shifter includes a network of transistors configured to receive a signal at a first node in a first voltage domain and to generate a corresponding signal at a second node in a second voltage domain during a transition period of time. A self timing circuit is configured to receive an initiation signal based on the signal at the first node and to generate a voltage transition accelerator signal that is used to pull up the second node prior to the expiration of the transition period of time.

A level shifter circuit is disclosed. The level shifter includes an input circuit configured to receive an input signal generated using a first power supply voltage level and generate, using the first power supply voltage level, a first control signal and a second control signal using the input signal. The level shifter further includes a shifter circuit configured to generate a first shifted signal and a second shifted signal using the first control signal, the second control signal, and second power supply voltage level different than the first power supply voltage level, and a selection circuit configured to select, using a value of a previous output signal and the second power supply voltage level, one of the first shifted signal or the second shifted signal to generate a current output signal.