Patent classifications
H03K3/35625
LOW POWER SINGLE PHASE LOGIC GATE LATCH FOR CLOCK-GATING
Systems, apparatuses, and methods for implementing a low-power single-phase logic gate latch for clock-gating are disclosed. A latch circuit includes shared clocked transistors without including clock inverters. The shared clocked transistors include a P-type clocked transistor and an N-type clocked transistor, with the clock input coupled to the gate of the P-type clocked transistor and to the gate of the N-type clocked transistor. The P-type clocked transistor is coupled between first and second transistor stacks of the latch. The N-type clocked transistor is coupled to a source gate of a first stack N-type transistor gated by a data input and to a source gate of a second stack N-type transistor gated by the inverted data input. The latch has a lower clock pin capacitance than a traditional logic gate latch while also avoiding having clock inverters which reduces dynamic power consumption.
Scan Chain for Memory with Reduced Power Consumption
A scan chain architecture with lowered power consumption comprises a multiplexer selecting between a functional input and a test input. The output of the multiplexer is coupled to a low threshold voltage latch and, in test mode, to a standard threshold voltage latch. The low threshold voltage latch and standard threshold voltage latch are configured to store data when a clock input falls, using a master latch functional clock M_F_CLK, master latch test clock M_T_CLK, slave latch functional clock S_F_CLK, and slave latch test clock S_T_CLK. The slave latch has lower power consumption than the master latch.
REDUCED POWER SET-RESET LATCH BASED FLIP-FLOP
An apparatus includes a master latch circuit including a first circuit and a second circuit, and a slave latch circuit including a third circuit and a fourth circuit. The first circuit and the second circuit may be coupled to a first shared circuit node, and the third circuit and the fourth circuit may be coupled to a second shared circuit node. The master latch circuit may be configured to store a value of an input signal in response to an assertion of a clock signal. The slave latch circuit may be configured to store an output value of the master latch circuit in response to a de-assertion of the clock signal. The master latch circuit may also be configured to de-couple the first shared circuit node from a ground reference node in response to the de-assertion of the clock signal.
Footprint for multi-bit flip flop
An integrated circuit disclosed here includes a first plurality of cell rows, a second plurality of cell rows, first and second clock inverters, and a plurality of flip-flops. The second plurality of cell rows are arranged abutting the first plurality of cell rows. A first number of fins in the first plurality of cell rows is different from a second number of fins in the second plurality of cell rows. The first and second clock inverters are arranged in the second plurality of cell rows. The plurality of flip-flops are arranged in the first plurality of cell rows and the second plurality of cell rows. The plurality of flip-flops include a first plurality of flip-flops configured to operate in response to the first clock and second clock signals.
OPTIMIZATION OF SEMICONDUCTOR CELL OF VERTICAL FIELD EFFECT TRANSISTOR (VFET)
A vertical field effect transistor (VFET) cell implementing a VFET circuit over a plurality of gate grids includes: a 1.sup.st circuit including at least one VFET and provided over at least one gate grid; and a 2.sup.nd circuit including at least one VFET and provided over at least one gate grid formed on a left or right side of the 1.sup.st circuit, wherein a gate of the VFET of the 1.sup.st circuit is configured to share a gate signal or a source/drain signal of the VFET of the 2.sup.nd circuit, and the 1.sup.st circuit is an (X−1)-contacted poly pitch (CPP) circuit, which is (X−1) CPP wide, converted from an X-CPP circuit which is X CPP wide and performs a same logic function as the (X−1)-CPP circuit, X being an integer greater than 1.
FLIP FLOP STANDARD CELL
A flip flop standard cell that includes a data input terminal configured to receive a data signal, clock input terminal configured to receive a clock signal, a data output terminal, and a latch. A bit write circuit is configured to receive a bit write signal. The received data signal is latched and provided at the output terminal in response to the bit write signal and the clock signal. A hold circuit is configured to receive a hold signal, and the received data signal is not latched and provided at the data output terminal in response to the hold signal and the clock signal.
REGISTER WITH DATA RETENTION
A register with data retention includes a master-slave flip-flop, a balloon latch, and a level shifter. The master-slave flip-flop is supplied by a first power voltage. The balloon latch is supplied by a second power voltage. The second power voltage is independent of the first power voltage. The level shifter provides a voltage conversion between the master-slave flip-flop and the balloon latch. A data is stored in the master-slave flip-flop. When the first power voltage is disabled, the balloon latch is configured to temporarily retain the data.
METHOD FOR FORMING A TIMING CIRCUIT ARRANGEMENTS FOR FLIP-FLOPS
A method of forming a semiconductor device includes forming active regions, forming S/D regions, forming MD contact structures and forming gate lines resulting in corresponding transistors that define a first time delay circuit having a first input configured to receive a first clock signal and having a first output configured to generate a second clock signal from the first clock signal; and corresponding transistors that define a second time delay circuit having a second input configured to receive the second clock signal and having a second output configured to generate a third clock signal from the first clock signal; forming a first gate via-connector in direct contact with the first gate line atop the first-type active region in the first area; and forming a second gate via-connector in direct contact with the second gate line atop the second-type active region in the second area.
Flip-flop circuit with glitch protection
A flip-flop with glitch protection is disclosed. The flip-flop includes a differential amplifier circuit that generates amplifier output signals based on an input data and clock signals and precharges a true data node when a clock signal is inactive. A latch circuit is coupled to the differential amplifier and includes a latch node. Responsive to a current value of the input data signal having a first logic state, the latch node is set at a logic value equivalent to the precharged value during an active phase of the clock signal. Responsive to the current value of the input data signal having a second logic state complementary to the first, during the active phase of the clock signal, the latch circuit causes the latch node to be set to a logic value complementary to the precharged value, using the clock signal and the current value of the input data signal.
Processing circuit using delay element coupled between control terminal and connection terminal of input transistor for hold time violation immunity
A processing circuit includes an input circuit and a follow-up circuit. The input circuit includes a first transistor, a second transistor, and a delay element. The first transistor has a control terminal, a first connection terminal, and a second connection terminal. The control terminal of the first transistor is arranged to receive a data signal. A first connection terminal of the second transistor is coupled to the second connection terminal of the first transistor, and a control terminal of the second transistor is arranged to receive a first non-data signal. The delay element is coupled between the control terminal and the second connection terminal of the first transistor. A data input is received at an input node of the follow-up circuit, and the input node of the follow-up circuit is coupled to the second connection terminal of the second transistor.