Aspects of the invention can include a pulse generating means that outputs a set signal and reset signal for driving the high potential side switching element is such that, while either one of the set signal or reset signal is in an on-state as a main pulse signal for putting the high potential side switching element into a conductive state or non-conductive state, the other signal is turned on a certain time after the rise of the main pulse signal, thereby generating a condition in which the set signal and reset signal are both in an on-state.

As disclosed herein, a level shift circuit includes devices that are responsive to an ESD signal for placing those devices in a specific condition in response to the ESD signal indicating an ESD event. In some embodiments, the devices are transistors in current paths that are placed in a condition such that during an ESD event, voltage differentials in the current paths across voltage domain boundaries do not damage the circuitry of the level shift circuit. In some embodiments, some of the same devices that are responsive to the ESD event are also responsive to a signal to that detects the absence of a power supply voltage of one of the domains and places those devices in a condition to disable the level shift circuit if the power supply voltage is not present.

An integrated circuit device includes a level shifter circuit with a supply voltage rail to provide a supply voltage, a first pull-up circuit coupled between the supply voltage rail and a first node, a second pull-up circuit coupled between the supply voltage rail and a second node, a first switch including a first terminal coupled to the supply voltage rail, a second terminal coupled to the first node, and a control terminal coupled to the second node, and an inverter including an input terminal coupled to the first node, a voltage supply terminal coupled to the supply voltage, and an output terminal to provide an output voltage from the level shifter circuit.

The present disclosure provides an input buffer circuit, an intelligent optimization method, and a semiconductor memory thereof. The input buffer circuit may include a detection circuit, a mode control circuit, a double-end differential circuit, and a single-end complementary metal oxide semiconductor (CMOS) unit. The detection circuit may be configured to obtain a working frequency of a chip. The mode control circuit is connected to the detection circuit, and configured to control, according to the working frequency obtained by the detection circuit, an input buffer to enter a double-end differential input mode and a single-end CMOS input mode. The double-end differential circuit and the single-end CMOS circuit are connected to the mode control circuit. The double-end differential input circuit may be configured to process high-speed data transmission in the double-end differential input mode. The single-end CMOS circuit may be configured to a process low-speed data transmission in the single-end CMOS input mode.

The invention provides a full swing voltage conversion circuit. The full swing voltage conversion circuit comprises: an input terminal for inputting a first level signal; an output terminal for outputting a second level signal; a differential input unit for inverting the first level signal of the input terminal, and outputting a differential input signal; a conversion unit; and an output driving unit; wherein the full swing voltage conversion circuit further comprises an auxiliary pull-down unit between the input terminal and the conversion unit for receiving a feedback to improve capability of the conversion unit in recognizing the differential input signal, such that the full swing voltage conversion circuit of the invention can convert from inputting a low voltage to outputting a high voltage.

An input stage for an LVDS receiver circuit is provided, which includes at least one supply voltage connection as well as a first and a second stage input to be acted upon by a differential input signal pair. The input stage further includes a first and a second differential stage, the stage inputs being directly connected to one input each of the first differential stage and indirectly, via one level-shifting circuit each, to one input each of the second differential stage. According to the present invention, the first and the second differential stage are connected to the supply voltage connection via one transistor each of a third differential stage, the control input of one of these transistors being connected to a measuring path connecting the stage inputs to one another, with the control input of the other transistor being connected to an apparatus/device (arrangement) for providing a reference voltage.

A data transmitter includes: a plurality of parallel driver slices, a first slice of the plurality of parallel driver slices having a first signal generator circuit with a first transistor coupled to a data signal and in series with a second transistor coupled to a first bias signal; and a first bias circuit including a third transistor and a fourth transistor in series with a first current source, the first bias circuit further including a first operational amplifier (op amp) having a first input coupled to a first reference voltage and a second input coupled between the fourth transistor and the first current source, an output of the first op amp configured to provide the first bias signal to the second transistor and to the third transistor.

Various implementations described herein are related to a device having a level shifting circuit that shifts an input voltage in a first domain to an output voltage in a second domain, and also, the level shifting circuit may shift the input voltage to the output voltage based on a first level shifting response. The device may also include a boost circuit that increases the input voltage and provides a boosted input voltage to the level shifting circuit so that the level shifting circuit shifts the input voltage to the output voltage based on the boosted input voltage.

A signal is caused to have a small amplitude without increasing a voltage source, and power consumption is reduced. A semiconductor circuit includes a driver, and a pulse control circuit that controls the driver. The driver has a configuration in which first and second transistors are connected. The pulse control circuit supplies a first control signal to the first transistor, and supplies a second control signal to the second transistor. The first and second control signals to be supplied from the pulse control circuit are different in a pulse width from each other. Therefore, the pulse control circuit reduces an output amplitude of the driver.

A level shifter includes main and auxiliary level shifters, a switch circuit and a hold circuit. The main level shifter includes NMOS and PMOS transistors in a Differential to Single Ended (D2S) structure. The auxiliary level shifter is connected to an output of the main level shifter and includes NMOS and PMOS transistors. Each of the main and auxiliary level shifters includes internal nodes. The switch circuit settles first nodes of the internal nodes to values to support high speed data transmission, and the hold circuit holds second nodes of the internal nodes to a certain value during low frequency operation. The level shifter receives a serial stream of binary values of core supply voltage, converts the serial stream of binary values from the core supply voltage to an input/output (I/O) voltage, and outputs the serial stream of binary values of the input/output (I/O) voltage.