Reduced-power dynamic data circuits with wide-band energy recovery are described herein. In one embodiment, a circuit system comprises at least one sub-circuit in which at least one of the sub-circuits includes a capacitive output node that is driven between low and high states in a random manner for a time period and an inductive circuit path coupled to the capacitive output node. The inductive circuit path includes a transistor switch and an inductor connected in series to discharge and recharge the output node to a bias supply. A pulse generator circuit generates a pulse width that corresponds to a timing for driving the output node.

A bootstrapped switch is provided. The bootstrapped switch includes a first transistor, a second transistor, a capacitor and five switches. The first transistor receives an input voltage and outputs an output voltage. A first terminal of the second transistor receives the input voltage, and a second terminal of the second transistor is coupled to a first terminal of the capacitor. In a first clock phase, the capacitor is being charged. In a second clock phase, the control terminal of the first transistor and the control terminal of the second transistor are substantially equipotential with a second terminal of the capacitor. The control terminal of the first transistor and the control terminal of the second transistor are coupled to the power supply voltage within a predetermined time before the terminal of the first clock phase or within a predetermined time after the start of the second clock phase.

Disclosed is a method of generating secret information on the basis of a ring oscillator. According to an embodiment of the present disclosure, there is provided an apparatus for generating secret information on the basis of a ring oscillator, the apparatus including: multiple PUF information generation units each including at least one ring oscillator cell and generating physically unclonable function (PUF) information generated by the at least one ring oscillator cell; a phase checking unit cross-checking phases for the multiple pieces of the PUF information that are output from the multiple PUF information generation units, respectively; and a secret key generation unit outputting secret key information based on a result of comparing the multiple phases received from the phase checking unit.

Reduced-power dynamic data circuits with wide-band energy recovery are described herein. In one embodiment, a circuit system comprises at least one sub-circuit in which at least one of the sub-circuits includes a capacitive output node that is driven between low and high states in a random manner for a time period and an inductive circuit path coupled to the capacitive output node. The inductive circuit path includes a transistor switch and an inductor connected in series to discharge and recharge the output node to a bias supply. A pulse generator circuit generates a pulse width that corresponds to a timing for driving the output node.

A bootstrapped switch is provided. The bootstrapped switch includes a first transistor, a second transistor, a capacitor and five switches. The first transistor receives an input voltage and outputs an output voltage. A first terminal of the second transistor receives the input voltage, and a second terminal of the second transistor is coupled to a first terminal of the capacitor. In a first clock phase, the capacitor is being charged. In a second clock phase, the control terminal of the first transistor and the control terminal of the second transistor are substantially equipotential with a second terminal of the capacitor. The control terminal of the first transistor and the control terminal of the second transistor are coupled to the power supply voltage within a predetermined time before the terminal of the first clock phase or within a predetermined time after the start of the second clock phase.

Methods, systems, and devices for leakage current reduction in electronic devices are described. Electronic devices may be susceptible to leakage currents when operating in a first mode, such as an inactive (e.g., a standby) mode. To mitigate leakage current, an electronic device may include transistors coupled in cascode configuration where a gate of a drain-side transistor in the cascode configuration is configured to be biased by an adjustable (e.g., a dynamic) control signal. When the transistors are inactive (e.g., off), the control signal may be adjusted to prevent leakage associated with the inactive transistors. Further, a source-side transistor in the cascode configuration may be configured to have a high threshold voltage (e.g., relative to the drain-side transistor).

Methods, systems, and devices for leakage current reduction in electronic devices are described. Electronic devices may be susceptible to leakage currents when operating in a first mode, such as an inactive (e.g., a standby) mode. To mitigate leakage current, an electronic device may include transistors coupled in cascode configuration where a gate of a drain-side transistor in the cascode configuration is configured to be biased by an adjustable (e.g., a dynamic) control signal. When the transistors are inactive (e.g., off), the control signal may be adjusted to prevent leakage associated with the inactive transistors. Further, a source-side transistor in the cascode configuration may be configured to have a high threshold voltage (e.g., relative to the drain-side transistor).

A line driver circuit is configured to provide a high spurious free dynamic range output and includes first and second output transistors and a control circuit. The first output transistor is controllable to pull an output node to a logic high state, and the second output transistor is controllable to pull the output node to a logic low state. The first control circuit is connected to a control input of the first output transistor and configured to establish a control signal at the control input of the first output transistor while the second output transistor is in a low impedance operating state to reduce an imbalance in turn-on delay between the first output transistor and the second output transistor.

Methods, systems, and devices for leakage current reduction in electronic devices are described. Electronic devices may be susceptible to leakage currents when operating in a first mode, such as an inactive (e.g., a standby) mode. To mitigate leakage current, an electronic device may include transistors coupled in cascode configuration where a gate of a drain-side transistor in the cascode configuration is configured to be biased by an adjustable (e.g., a dynamic) control signal. When the transistors are inactive (e.g., off), the control signal may be adjusted to prevent leakage associated with the inactive transistors. Further, a source-side transistor in the cascode configuration may be configured to have a high threshold voltage (e.g., relative to the drain-side transistor).

Disclosed is a method of generating secret information on the basis of a ring oscillator. According to an embodiment of the present disclosure, there is provided an apparatus for generating secret information on the basis of a ring oscillator, the apparatus including: multiple PUF information generation units each including at least one ring oscillator cell and generating physically unclonable function (PUF) information generated by the at least one ring oscillator cell; a phase checking unit cross-checking phases for the multiple pieces of the PUF information that are output from the multiple PUF information generation units, respectively; and a secret key generation unit outputting secret key information based on a result of comparing the multiple phases received from the phase checking unit.