An integrated circuit (IC) includes an Input/Output (I/O) interface, first-domain circuitry and second-domain circuitry. The I/O interface is coupled to a first voltage domain and is configurable by a set of control bits. The second-domain circuitry is coupled to a second voltage domain and is configured to generate a bit value for a control bit among the control bits, to generate a multi-bit identifier (ID) of the control bit, and to transmit the bit value and the multi-bit ID. The first-domain circuitry is coupled to the first voltage domain and is configured to receive the bit value and the multi-bit ID, to identify the control bit from the multi-bit ID, and to configure the control bit of the I/O interface with the bit value.

An integrated circuit (IC) includes an Input/Output (I/O) interface, first-domain circuitry and second-domain circuitry. The I/O interface is coupled to a first voltage domain and is configurable by a set of control bits. The second-domain circuitry is coupled to a second voltage domain and is configured to generate a bit value for a control bit among the control bits, to generate a multi-bit identifier (ID) of the control bit, and to transmit the bit value and the multi-bit ID. The first-domain circuitry is coupled to the first voltage domain and is configured to receive the bit value and the multi-bit ID, to identify the control bit from the multi-bit ID, and to configure the control bit of the I/O interface with the bit value.

Systems and techniques for applying voltage biases to gates of driver circuitry of an integrated circuit (IC) based on a detected bus voltage, IC supply voltage, or both are used to mitigate Electrical Over-Stress (EOS) issues in components of the driver circuitry caused, for instance, by high bus voltages in serial communication systems relative to maximum operating voltages of those components. A driver bias generator selectively applies bias voltages at gates of transistors of a stacked driver structure of an IC to prevent the voltage drop across any given transistor of the stacked driver structure from exceeding a predetermined threshold associated with the maximum operating voltage range of the transistors.

Systems and techniques for applying voltage biases to gates of driver circuitry of an integrated circuit (IC) based on a detected bus voltage, IC supply voltage, or both are used to mitigate Electrical Over-Stress (EOS) issues in components of the driver circuitry caused, for instance, by high bus voltages in serial communication systems relative to maximum operating voltages of those components. A driver bias generator selectively applies bias voltages at gates of transistors of a stacked driver structure of an IC to prevent the voltage drop across any given transistor of the stacked driver structure from exceeding a predetermined threshold associated with the maximum operating voltage range of the transistors.

A transmit driver architecture with a test mode (e.g., a JTAG configuration mode), extended equalization range, and/or multiple power supply domains. One example transmit driver circuit generally includes one or more driver unit cells having a differential input node pair configured to receive an input data signal and having a differential output node pair configured to output an output data signal; a plurality of power switches coupled between the differential output node pair and one or more power supply rails; a first set of one or more drivers coupled between a first test node of a differential test data path and a first output node of the differential output node pair; and a second set of one or more drivers coupled between a second test node of the differential test data path and a second output node of the differential output node pair.

A transmit driver architecture with a test mode (e.g., a JTAG configuration mode), extended equalization range, and/or multiple power supply domains. One example transmit driver circuit generally includes one or more driver unit cells having a differential input node pair configured to receive an input data signal and having a differential output node pair configured to output an output data signal; a plurality of power switches coupled between the differential output node pair and one or more power supply rails; a first set of one or more drivers coupled between a first test node of a differential test data path and a first output node of the differential output node pair; and a second set of one or more drivers coupled between a second test node of the differential test data path and a second output node of the differential output node pair.

A semiconductor device, able to be selectively configured to perform one or more user defined logic functions, includes a semiconductor die and a selectable power regulator. The semiconductor die, in one aspect, includes a first region and a second region. The first region is operatable to perform a first set of logic functions based on a first power domain having a first voltage. The second region is configured to perform a second set of logic functions based on a second power domain having a second voltage. The selectable power regulator, in one embodiment, provides the second voltage for facilitating the second power domain in the second region of the semiconductor die in response to at least one enabling input from the first region of the semiconductor die.

A semiconductor device, able to be selectively configured to perform one or more user defined logic functions, includes a semiconductor die and a selectable power regulator. The semiconductor die, in one aspect, includes a first region and a second region. The first region is operatable to perform a first set of logic functions based on a first power domain having a first voltage. The second region is configured to perform a second set of logic functions based on a second power domain having a second voltage. The selectable power regulator, in one embodiment, provides the second voltage for facilitating the second power domain in the second region of the semiconductor die in response to at least one enabling input from the first region of the semiconductor die.

An input/output driving circuit may include a pad, an open-drain driving circuit, a high-voltage protection unit and a control unit. The pad is for transmitting and receiving signals. The open-drain driving circuit may output a transmission signal to the pad. The high-voltage protection unit may input a received signal from the pad. The control unit may control the open-drain driving circuit and the high-voltage protection unit. The control unit may include a gate control logic, a transmission control logic and an inverter. The gate control logic may receive a voltage of the pad and output a feedback voltage to the open-drain driving circuit. The transmission control logic may receive a clock signal and an enable signal, and transfer a first control signal to the open-drain driving circuit. The inverter may invert the enable signal and transfer an inverted enable signal to the gate control logic.

An input/output driving circuit may include a pad, an open-drain driving circuit, a high-voltage protection unit and a control unit. The pad is for transmitting and receiving signals. The open-drain driving circuit may output a transmission signal to the pad. The high-voltage protection unit may input a received signal from the pad. The control unit may control the open-drain driving circuit and the high-voltage protection unit. The control unit may include a gate control logic, a transmission control logic and an inverter. The gate control logic may receive a voltage of the pad and output a feedback voltage to the open-drain driving circuit. The transmission control logic may receive a clock signal and an enable signal, and transfer a first control signal to the open-drain driving circuit. The inverter may invert the enable signal and transfer an inverted enable signal to the gate control logic.