A method of heating/cooling one or more substrates includes placing the one or more substrates on a rotatable hot-cold plate, wherein each substrate of the one or more substrates is placed on a corresponding sub-plate of a plurality of sub-plates of the rotatable hot-cold plate. The method further includes rotating the one or more substrates, wherein rotating the one or more substrates comprises rotating each substrate of the one or more substrates independently. The method further includes heating or cooling the one or more substrates using a heating-cooling element, wherein rotating the one or more substrates comprises rotating the one or more substrates relative to the heating-cooling element.

A ceramic structure 10 includes a heater electrode 14 within a disk-shaped AlN ceramic substrate 12. The heater electrode 14 contains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |ΔCTE| between a thermal expansion coefficient of the AlN ceramic substrate 12 and a thermal expansion coefficient of the heater electrode 14 at a temperature in the range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.

A heater is provided having at least one thermally sprayed resistive heating layer, the resistive heating layer comprising a first metallic component that is electrically conductive and capable of reacting with a gas to form one or more carbide, oxide, nitride, and boride derivative; one or more oxide, nitride, carbide, and boride derivative of the first metallic component that is electrically insulating; and a third component capable of stabilizing the resistivity of the resistive heating layer. In some embodiments, the third component is capable of pinning the grain boundaries of the first metallic component deposited in the resistive heating layer and/or altering the structure of aluminum oxide grains deposited in the resistive heating layer.

A thermocouple guide includes a straight tube portion and a curved tube portion formed in continuation with the straight tube portion to turn an extension direction from the straight tube portion. A cross-section of a tip-side part of the curved tube portion, the tip-side part occupying a predetermined range including a tip end of the curved tube portion, has an external shape that is obtained by linearly cutting both sides of a circle.

A thermocouple guide includes a first tube portion of a straight shape, and a second tube portion connected to the first tube portion and including a curved section that is formed to turn an extension direction from the first tube portion. An outer diameter of at least a tip-side part of the curved section, the tip-side part extending from a tip end of the curved section through a predetermined length, is smaller than an outer diameter of the first tube portion.

A ceramic heater includes an AlN ceramic substrate having a wafer placement surface in which, from a position closer to the wafer placement surface, a plasma-generation RF electrode and a heater electrode are embedded in this order so as to be separated from each other. The AlN ceramic substrate includes an AlN ceramic high-resistivity layer disposed between the RF electrode and the heater electrode, and an AlN ceramic low-resistivity layer other than the high-resistivity layer. The high-resistivity layer and the low-resistivity layer each contain Si, Mg, and Ti. The high-resistivity layer has higher Mg and Ti contents and a higher volume resistivity than the low-resistivity layer.

A semiconductor-manufacturing apparatus member includes an upper plate that has a wafer placement surface having a concave shape or a convex shape, that contains an electrostatic electrode, and that is composed of ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite the surface that is joined to the upper plate with a second metal joining layer interposed therebetween, wherein a thermal expansion coefficient of the intermediate plate is larger than thermal expansion coefficients of the upper plate and the lower plate.

A sample holder includes: a ceramic substrate including one main surface serving as a sample holding surface; a heat-generating resistor located inside or on an other main surface of the ceramic substrate; a metal member having a first surface bonded to, by a bonding layer, and covering the other main surface of the ceramic substrate, the metal member including a through hole penetrating from the first surface to an opposite surface of the metal member; a lead terminal inserted into the metal member; and a conductive portion located inside the bonding layer, the conductive portion electrically connecting the heat-generating resistor and the lead terminal, the conductive portion including a region which extends in a same direction as the other main surface, and separate from the other main surface of the ceramic substrate.

A heater for a semiconductor processing chamber is disclosed that includes a ceramic body, and a resistive heating element embedded in the ceramic body, the resistive heating element disposed in a heater coil having an inner central sector and an outer central sector, the inner central sector having a plurality of first peaks and the outer central sector having a plurality of second peaks, wherein the number of first peaks is less than about fifty-six, and the number of second peaks is less than about eighty.

The present invention relates to a ceramic heater. The ceramic heater of the present invention comprises: a heater plate in which a heating element is disposed and which is made of a ceramic material; a shaft which has a tubular shape with a through-hole and is coupled to the bottom surface of the heater plate and in which a rod for supplying power to the heating element through the through-hole is received; and a continuous or discontinuous air pocket which is provided in a joint with which the heater plate and the shaft come into contact and by which the heater plate and the shaft are coupled to each other, wherein the air pocket is formed along the joining surface of the joint.