A polymeric dielectric may include a coordination complex of a modified elastic polymer and a metal cation. The modified elastic polymer may include an organic ligand moiety that coordinates the metal cation in a main chain of the elastic polymer. Provided are a method of manufacturing the same, and an electronic device and a thin film transistor including the same.

A field effect transistor (FET) structure includes a substrate, an internal gate, an insulation layer, a semiconductor strip, a gate dielectric insulator, and a gate conductor. The internal gate includes a floor portion located on the substrate and a wall portion extending from the floor portion. The insulation layer is located on the floor portion of the internal gate. The semiconductor strip is located on the wall portion and a portion of the insulation layer, and the semiconductor strip includes source/drain regions and a channel region adjacent to the source/drain regions. The gate dielectric insulator is located on the channel region. The gate conductor is located on the gate dielectric insulator.

An organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode on a substrate, in which the organic semiconductor layer includes an organic semiconductor and a resin (C) having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group having one or more carbon atoms or having two or more carbon atoms in a case of forming an alkoxycarbonyl group, a cycloalkyl group, an aralkyl group, an aryloxycarbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group; and a method for manufacturing an organic thin-film transistor including: applying a coating solution which contains the organic semiconductor and the resin (C) and causing the resin (C) to be unevenly distributed.

Oxacycloolefinic polymers as typically obtained by metathesis polymerization using Ru-catalysts, show good solubility and are well suitable as dielectric material in electronic devices such as capacitors and organic field effect transistors.

The present invention pertains to: a Janus-type triptycene derivative which is capable of forming a self-assembled film which does not depend on the material quality of a substrate; a self-assembled film using said Janus-type triptycene derivative; a structure having said film on a surface thereof; a method for manufacturing said film; and an electronic device using said method.

The present invention relates to organic electronic devices, and more specifically to organic field effect transistors, comprising a dielectric layer that comprises a polycycloolefinic polymer and a diazirine compound.

An organic field effect transistor includes a channel structure defining an active area located between a source and a drain. The channel structure includes a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer. The photoalignment layer is configured to influence an orientation of molecules within the organic semiconductor layer and hence impact the mobility of charge carriers both within the active area and adjacent to the active area.

Polymers comprising at least one unit of formula (1) wherein n is 0 or 1, m and p are independently from each other 0, 1, 2, 3, 4, 5 or 6, provided that the sum of n, m and p is at least 2, and n and p are not 0 at the same time, Ar.sup.1 and Ar.sup.2 are independently from each other C.sub.6-14-arylene or C.sub.6-14-aryl, which may be substituted with 1 to 4 substituents independently selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl and 5 to 14 membered heteroaryl, and X.sup.1, X.sup.2 and X.sup.3 are independently from each other and at each occurrence O or S, compositions comprising these polymers, and electronic devices comprising a layer formed from the compositions. Preferably, the electronic device is an organic field effect transistor and the layer is the dielectric layer.

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The disclosure describes methods, devices, and system that measure chemisorption potentiometrically for detection of target molecules. In one example, a device includes a semiconductor, an ionic conducting electronic insulator coupled to the semiconductor, a floating gate electrode comprising a first portion and a second portion, the first portion being coupled to the semiconductor via the ionic conducting electronic insulator, an aqueous buffer, and a primary gate electrode coupled to the second portion of the floating gate electrode via the aqueous buffer. The second portion of the floating gate electrode may comprise a probe configured to react with a target chemical composition of a molecule to detect the presence of the molecule. Reaction with the target chemical composition may change an electrical property of the device and indicate the presence of the molecule in the aqueous buffer.

A transistor manufacturing method includes: forming a first insulator layer of which formation material is a fluorine-containing resin, on a substrate having a source electrode, a drain electrode, and a semiconductor layer so as to cover the semiconductor layer; forming a second insulator layer so as to cover the first insulator layer; forming a base film on at least part of a surface of the second insulator layer; and after depositing a metal which is an electroless plating catalyst on a surface of the base film, forming a gate electrode on the surface of the base film by electroless plating, wherein the forming of the base film is performed by applying a liquid substance which is a formation material of the base film to the surface of the second insulator layer, and the second insulator layer has a higher lyophilic property with respect to the liquid substance than the first insulator layer.