Patent classifications
H10K10/471
COMPOSITION, LAMINATE, METHOD OF MANUFACTURING LAMINATE, TRANSISTOR, AND METHOD OF MANUFACTURING TRANSISTOR
Laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor using a composition having the following (a) to (c): (a) a first organic compound represented by Formula (1) below (R represents a hydrogen atom or a glycidyl group. A plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group), (b) a second organic compound represented by Formula (2) below, and (c) a photocationic polymerization initiator
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ORGANIC SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD THEREOF, COMPOUND, COMPOSITION FOR FORMING ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR FILM, AND MANUFACTURING METHOD THEREOF
Objects of the present invention is to provide an organic semiconductor element having high mobility and excellent temporal stability under high humidity, and a manufacturing method thereof, to provide a novel compound which is suitable as an organic semiconductor, and to provide an organic semiconductor film having high mobility and excellent temporal stability under high humidity and a manufacturing method thereof, and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.
The organic semiconductor element according to the present invention has an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1.
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ORGANIC SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD THEREOF, COMPOUND, COMPOSITION FOR FORMING ORGANIC SEMICONDUCTOR FILM, AND ORGANIC SEMICONDUCTOR FILM
An object of the invention is to provide an organic semiconductor element in which mobility is high, heat resistance is excellent, and variation of mobility is suppressed, and a manufacturing method thereof, to provide a novel compound that is suitable as an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, heat resistance is excellent, and variation of mobility is suppressed and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.
The organic semiconductor element according to the invention has an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 or 2 below.
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ORGANIC SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD THEREOF, ORGANIC SEMICONDUCTOR COMPOSITION, AND ORGANIC SEMICONDUCTOR FILM
Objects of the present invention are to provide an organic semiconductor element having excellent coating manufacturing process suitability, excellent carrier mobility, excellent heat resistance, and excellent flexibility of a semiconductor active layer and to provide an organic semiconductor composition that can form an organic semiconductor having excellent coating manufacturing process suitability, excellent carrier mobility, excellent heat resistance and excellent flexibility, an organic semiconductor film in which the composition is used, and a method of manufacturing an organic semiconductor element.
The organic semiconductor element according to the present invention includes a compound represented by Formula 1 in a semiconductor active layer. In Formula 1, A is an aromatic ring selected from any one of aromatic rings represented by Formula 2 or 3, *'s represent bonding positions to two side chalcogenophene rings, X.sup.a's represent chalcogen atoms, one of X.sup.1 and Y.sup.1 is a chalcogen atom, and one of X.sup.2 and Y.sup.2 is a chalcogen atom.
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GATE INSULATING FILM FORMING COMPOSITION
[Problem] To provide a gate insulating film forming composition comprising a polysiloxane, which forms a gate insulating film having excellent characteristics such as high dielectric constant and high mobility. [Means for Solution] The gate insulating film forming composition comprises (I) a polysiloxane, (II) barium titanate, and (III) a solvent, wherein the content of the barium titanate is 30 to 80 mass % based on the total mass of the polysiloxane and the barium titanate.
FLEXIBLE ARRAY SUBSTRATE STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
A flexible array substrate structure and manufacturing method thereof are disclosed, in which the patterning process of an organic semi-conductive layer is achieved by using the inside wall of the opening of a color film layer as a bank, so that one mask can be saved. Also, a process for manufacturing a device can be simplified by an improved device structure, so that the flexible array substrate structure of the invention can be obtained by only using four masks.
DIELECTRIC AND DIELECTRIC INK AND CAPACITOR AND TRANSISTOR AND DEVICE
A dielectric and a dielectric ink include a dielectric material. The dielectric material includes ceramide or a ceramide derivative. A capacitor and a transistor may include the dielectric material. A device may include at least one of a capacitor and a transistor that includes the dielectric material. A dielectric that includes ceramide or a ceramide derivative may be configured to provide dielectric performance in a bio field. The effect on a human body by the dielectric may be reduced, based on the dielectric material of the dielectric including ceramide or a ceramide derivative.
Organic thin film transistors and the use thereof in sensing applications
The present invention relates to organic thin film transistors and the preparation and use thereof in sensing applications, and in particular in glucose sensing applications.
Organic semiconductor material
Novel compounds useful as organic semiconductor material are described. Semiconductor devices containing said organic semiconductor material are also described.
Photo-patternable gate dielectrics for OFET
Articles utilizing polymeric dielectric materials for gate dielectrics and insulator materials are provided along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors.