The film structure according to an embodiment of the present invention includes at least one active monolayer having an energy level quantized in at least one axial direction and at least one barrier alternately stacked with the at least one active monolayer. Current flows through the active monolayer, and the current flow may be limited by the quantized energy level.

An organic electronic device comprises a substrate, at least one morphological stabilizing layer positioned over the substrate, the morphological stabilizing layer comprising a material having a T.sub.g greater than 50° C., and at least one organic layer positioned in direct contact with the morphological stabilizing layer. A method of making an organic electronic device is also disclosed.

An organic single-crystalline heterojunction composite film is provided. The organic single-crystalline heterojunction composite film comprises at least one organic single-crystalline efficiently coupled unit. The organic single-crystalline efficiently coupled unit constructed by two organic single-crystalline thin films laminated together, with highly efficient lamination. The organic single-crystalline heterojunction composite film of the present disclosure has multiple advantages, such as highly ordered molecular arrangement, few defects, long exciton diffusion length, and excellent charge carrier transportation in the single-crystalline layer, moreover, integration of optoelectronic function and flexibility could be realized. The preparation method of organic single-crystalline heterojunction composite film is also provided. High-quality organic single-crystalline heterojunction composite film has a wide range of applications in the fields of sensors, photodetectors, solar cells, displays, memory devices, complementary circuits, and so on.

In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.

A multi-negative differential transconductance device includes a substrate conductive portion; a gate insulating layer formed by being laminated on the substrate conductive portion; a first semiconductor, a second semiconductor, and a third semiconductor which have different threshold voltages and are formed to be horizontally connected in series on the gate insulating layer; and an electrode formed at both ends of the first semiconductor and the third semiconductor. The multi-negative differential transconductance device forms a junction of three or more semiconductor materials in one device to have a plurality of peaks and valleys so that the multi-negative differential transconductance device is utilized to implement a multi-valued logic circuit which is capable of representing four or more logical states without significantly increasing an area of the negative differential transconductance device which occupies the chip. Therefore, effects of low power consumption, a reduced size, and high speed of a chip may be achieved.

Provided are P-type semiconductor layer, P-type multilevel element, and manufacturing method for the element. The P-type multilevel element comprises a gate electrode, an active structure overlapping the gate electrode, a gate insulating layer disposed between the gate electrode and the active structure, and source and drain electrodes electrically connected to both ends of the active structure, respectively. The active structure has a first P-type active layer, a second P-type active layer, and a barrier layer disposed between the first P-type active layer and the second P-type active layer. A threshold voltage for forming a channel in the first P-type active layer and a threshold voltage for forming a channel in the second P-type active layer have different values.

In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.

A method for fabricating a single electron transistor is provided. A substrate includes a substantially planar surface with a source electrode, a drain electrode, and a gate electrode thereon, with the source and drain electrodes spaced apart from one another by a gap. The source electrode and the drain electrode are electrified, and a single nanometer-scale conductive particle is electrospray deposited in the gap. The single nanometer-scale conductive particle has an effective size of not greater than 10 nanometers. At least one carbon nanotube is deposited on the substrate and subjected to dielectrophoresis to position the carbon nanotube within 1 nanometer of the single nanometer-scale conductive particle. The at least one carbon nanotube establishes a first connection between the source electrode and the single nanometer-scale conductive particle and a second connection between the drain electrode and the single nanometer-scale conductive particle.

Provided are devices and methods to detect the presence of volatile organic compounds related to the presence of a disease state in a biological sample. The devices may include a detection moiety such as a polynucleotide in electronic communication with a semiconductor such as graphene or a carbon nanotube.

Provided is an organic transistor material characterized by having a trans-1,4-disubstituted cyclohexane structure derived from a compound represented by Formula (1). In Formula (1), X represents a skeleton in which plural phenylene groups or naphthylene groups are linked directly or via a vinyl group, a condensed polycyclic hydrocarbon skeleton, or a heterocyclic compound skeleton; m, n, p, and q each independently represent 0 or 1; and R1 and R2 each independently represent an alkyl group or haloalkyl group having 1 to 15 carbon atoms. This organic transistor material has high carrier mobility and excellent thermal stability.

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