The present invention relates to indane derivatives of the formula (I) and mixtures thereof, wherein X is selected from groups of the formula -A-(NAr.sub.2), wherein A is a chemical bond or phenylene which is unsubstituted or substituted by 1, 2 or 3 substituents selected from C.sub.1-C.sub.6-alkyl and C.sub.1-C.sub.6-alkoxy; Ar is unsubstituted or substituted aryl, wherein two groups Ar bound to the same nitrogen atom may together with the nitrogen atom also form a fused ring system having 3 or more than 3 unsubstituted or substituted rings; and the variables Y, n, m, k and l are as defined in the claims and the description. The invention further relates to methods for preparing such compounds and their use in organic electronics, in particular as hole transport material or electron blocking material. ##STR00001##

The purpose of the present invention is to provide: an organic semiconductor composition suitable for preparing an organic thin film by a solution method, an organic thin film obtained by using the organic semiconductor composition, and a practical field effect transistor which uses the organic thin film. The practical field effect transistor which uses the organic thin film has small variances in mobility and a threshold value, while maintaining a high mobility. Disclosed in the present specification is an organic semiconductor composition including an organic semiconductor compound, an insulation compound, an organic solvent A, which is a good solvent for the insulation compound, and an organic solvent B, which is a poor solvent for the insulation compound and has a higher boiling point than the organic solvent A. The mass ratio a:b of the organic solvent A and the organic solvent B is 1:8 to 8:1.

A composite includes a polymer network including pectin or a pectin derivative; a low-molecular compound having a hydrophilic group in the polymer network; and a polyvalent metal ion coordinated with an anion present in the polymer chain of the polymer network.

A method for enhancing aggregation state stability of organic semiconductor (OSC) films includes constructing the OSC film; introducing uniform and discontinuous nanoparticles on a surface of the film or an inside of the film. Electrical properties of the OSC film are not influenced by introducing the nanoparticles. Grain boundary, dislocation, stacking fault, and surface of the film are pinned by the nanoparticles, increasing potential barrier of the aggregation state evolution of the film, and thus enhancing the stability of the aggregation state and greatly improving maximum working temperature and storage lifetime of organic field-effect transistors. Under room temperature storage, morphology of the OSC film introduced with the nanoparticles is difficult to change, so that the stability of electrical properties of organic transistor components prepared from the film is ensured in a high-temperature and atmospheric working environment.

A memory device according to an embodiment includes a fluid layer extending in a first direction, a particle in the fluid layer, a first control electrode made of a first material, a first insulating film provided between the fluid layer and the first control electrode, a second control electrode made of a second material and provided to be spaced apart from the first control electrode in the first direction, a second insulating film provided between the fluid layer and the second control electrode, a third control electrode made of a third material different from the first material and the second material and provided between the first control electrode and the second control electrode, and a third insulating film provided between the fluid layer and the third control electrode.

Ultra-narrow bandgap Non Fullerene Acceptors (NFAs) comprising an A-D-A′-D-A structure or an A-D-A′-D′-A′-D-A structure were designed, synthesized, and characterized (where A, A′ are organic acceptor moieties and D and D′ are organic donor moieties). Exemplary NFA materials have narrow bandgap (0.86 eV-0.99 eV). Photovoltaic devices and Near Infrared photodetector devices based on these compositions above were synthesized with controlled amounts of solvents and additives. A photodetector having a specific detectivity of 2.41×10.sup.12 Jones (D*) at a wavelength of 1040 nm was achieved.

Provided are devices and methods to detect the presence of volatile organic compounds related to the presence of a disease state in a biological sample. The devices may include a detection moiety such as a polynucleoide in electronic communication with a semiconductor such as graphene or a carbon nanotube.

The invention relates to novel organic semiconducting compounds containing a polycyclic unit, to methods for their preparation and educts or intermediates used therein, to compositions, polymer blends and formulations containing them, to the use of the compounds, compositions and polymer blends as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising these compounds, compositions or polymer blends.

An aromatic compound which is represented by formula (1-I) or (1 -II). In formulae (1-I) and (1-II), Ar represents a monocyclic ring or the like; each of X.sup.1 and X.sup.2 represents an oxygen atom or the like; each of Y.sup.1 and Y.sup.2 represents CR.sup.6 or the like; each of R.sup.1 to R.sup.6 represents a hydrogen atom or the like; and at least one of the R.sup.1 to R.sup.6 moieties is a group that is represented by formula (2). In formula (2), A represents a specific alkenyl group or the like; each of 1 and n represents 0 or 1; m represents an integer from 1 to 20; and each of Z.sup.1 and Z.sup.2 represents a hydrogen atom or the like.

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A first object of the present invention is to provide a photoelectric conversion element having a high external quantum efficiency and small variation in response. A second object of the present invention is to provide an imaging element, an optical sensor, and a compound related to the photoelectric conversion element.

The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).

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