A method for forming an organic thin film transistor is provided. An organic semiconductor layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer are formed on an insulating substrate. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the insulating substrate are spaced from each other. The carbon nanotube film structure is heated to gasify the organic semiconductor material to form the organic semiconductor layer on a depositing surface.

The present invention relates to nanoparticles of π-conjugated polymers. The present invention also relates to an aqueous composition comprising these polymeric nanoparticles, to processes for making the nanoparticles, and to the use of these nanoparticles in the fabrication of electronic devices and components.

Organic semiconductor composition, comprising an organic semiconductor (OSC) material and a binder which is a spirobifluorene compound comprising 1 to 4 substituted or unsubstituted spirobifluorene moieties of formula 26.

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A polymer includes a first repeating unit and a second repeating unit forming a main chain, the first repeating unit including at least one first conjugated system, and the second repeating unit including at least one second conjugated system and a multiple hydrogen bonding moiety represented by Chemical Formula 1.

Objects of the present invention is to provide an organic semiconductor element having high mobility and to provide a composition for forming an organic semiconductor film with which an organic semiconductor film having high mobility can be formed, a method of manufacturing an organic semiconductor element formed from the composition for forming an organic semiconductor film, and a method of manufacturing an organic semiconductor film.

The organic semiconductor element according to the present invention has a semiconductor active layer including a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less. The composition for forming an organic semiconductor film according to the present invention contains a compound that is represented by Formula 1 and has a molecular weight of 3,000 or less, and a solvent.

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The present invention relates to a composition for an insulator of a thin film transistor, an insulator and an organic thin film transistor comprising the same. The insulator of a thin film transistor prepared with the composition of the present invention displays an excellent permittivity along with a low surface energy, and the organic thin film transistor comprising the same displays an improved organic semiconductor morphology formed on the top surface of the insulator, so that it can bring the effect of reducing leakage current density, improving charge carrier mobility, and improving current on/off ratio.

An organic thin film transistor and a method of manufacturing the same, the transistor including a gate electrode; an organic semiconductor layer overlapping the gate electrode; and an insulating layer between the gate electrode and the organic semiconductor layer, the insulating layer having an organic/inorganic hybrid region, wherein the organic/inorganic hybrid region includes a polymer and an inorganic material that is chemically bonded to the polymer through a reactive group on the polymer, and the insulating layer includes a space adjacent to the polymer, the inorganic material being positioned in the space.

Disclosed are an organic semiconductor thin film, a manufacturing method thereof, and a thin film transistor and an electronic device including the organic semiconductor thin film. The organic semiconductor thin film includes a matrix. The matrix includes an elastomer and nanoconfined polymer structures embedded in the matrix. The nanoconfined polymer structures form a polymer network. The nanoconfined polymer structures include a conjugation semiconductor polymer. The conjugation semiconductor polymer includes a repeating unit having at least one conjugation system in its main chain. The nanoconfined polymer structures are present in an upper surface layer and a lower surface layer of the organic semiconductor thin film respectively.

A polymeric dielectric may include a coordination complex of a modified elastic polymer and a metal cation. The modified elastic polymer may include an organic ligand moiety that coordinates the metal cation in a main chain of the elastic polymer. Provided are a method of manufacturing the same, and an electronic device and a thin film transistor including the same.

Provided are (i) a solution for forming an organic semiconductor layer which solution has an excellent coating property, (ii) an organic semiconductor which is produced with use of the solution and which has high heat resistance, (iii) a layer which contains the organic semiconductor, and (iv) an organic thin film transistor which exhibits high electrical properties. A composition containing: an organic semiconductor; and a polymer (1) having at least one unit selected from the group consisting of units represented by formulae (1-a), (1-b), and (1-c). A composition containing the organic semiconductor, the polymer (1), and an organic solvent can be suitably used as a solution for forming an organic semiconductor layer.