An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer. The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.

An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer, The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.

A process for producing a cube textured foil is described. The process includes providing a cube textured metal foil M. The process further includes electroplating an epitaxial layer of an alloy on the foil M, whereby the epitaxial layer substantially replicates the cube texture of the metal foil M. The process further includes electroplating a non-epitaxial layer of an alloy on the epitaxial layer. The process further includes separating the electroplated alloy from the cube textured metal foil M to obtain an electro-formed alloy with one cube textured surface.

A coated conductor comprises a substrate supporting a ReBCO superconductor adapted to carry current in a superconducting state. The superconductor is characterized in having peaks in critical current (J.sub.c) of at least 0.2 MA/cm.sup.2 in a magnetic field of about 1 Tesla when the field is applied normal to the surface of the superconductor and when the field is applied parallel to the surface of the superconductor, and further characterized in that the superconductor includes horizontal defects and columnar defects in a size and an amount sufficient to result in the said critical current response. The conductor is characterized in that the ratio of the height of the peaks in the J.sub.c is in the range from 3:1 with the ratio of the field perpendicular (0 degrees) to the field parallel (+/90 degrees) to the range from 3:1 with the ratio of the field parallel to the field perpendicular.

A substrate structure is provided for use in a superconductive device. The substrate structure has at least one of its two opposite surfaces configured for carrying at least one superconductive structure thereon. The substrate structure comprises a substrate made of a dielectric material composition and having a tape-like shape of a predetermined geometry characterized by a width-thickness aspect ratio of at least 10 and global planarity of said at least one surface defined by a surface roughness on a nanometric scale substantially not exceeding 1 nm rms.