According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO.sub.3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO.sub.3 elongated along an axis that is between 60? to 90? from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

The present invention relates to a precursor (1) for production of a high-temperature superconductor (HTS) in ribbon form, comprising a metallic substrate (10) in ribbon form having a first ribbon side (11) and a second ribbon side (12), wherein, on the first ribbon side (11), (a) the substrate (10) has a defined texture as template for crystallographically aligned growth of a buffer layer or an HTS layer and (b) an exposed surface of the substrate (10) is present or one or more layers (20,30) are present that are selected from the group consisting of: buffer precursor layer, pyrolyzed buffer precursor layer, buffer layer, HTS precursor layer, pyrolyzed HTS buffer precursor layer and pyrolyzed and further consolidated HTS buffer precursor layer, and, on the second ribbon side (12), at least one ceramic barrier layer (40) that protects the substrate (10) against oxidation or a precursor which is converted to such a layer during the HTS crystallization annealing or the pyrolysis is present, wherein, when one or more layers (20, 30) are present on the first ribbon side (11), the ceramic barrier layer (40) or the precursor thereof has a different chemical composition and/or a different texture than the layer (20) arranged on the first ribbon side (11) and directly adjoining the substrate (10). In this precursor, the barrier layer (40) is a layer that delays or prevents ingress of oxygen to the second ribbon side (12) and is composed of conductive ceramic material or a precursor which is converted to such a precursor during the HTS crystallization annealing or the pyrolysis, and the ceramic material is an electrically conductive metal oxide or an electrically conductive mixture of metal oxides, wherein the conductive metal oxide or one or more metal oxides in the conductive mixture is/are preferably metal oxide(s) doped with an extraneous metal.

A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO.sub.3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO.sub.3 elongated along an axis that is between 60? to 90? from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

An oxide superconducting wire, includes a laminate including a base material, an intermediate layer, and an oxide superconducting layer, the intermediate layer being laminated on a main surface of the base material, the intermediate layer being constituted of one or more layers having an orientation, the intermediate layer having one or more first non-orientation regions extending in a longitudinal direction of the base material, the oxide superconducting layer being laminated on the intermediate layer, the oxide superconducting layer having a crystal orientation controlled by the intermediate layer, the oxide superconducting layer having second non-orientation regions located on the first non-orientation regions, and a metal layer which covers at least a front surface and side surfaces of the oxide superconducting layer in the laminate.

A superconducting lead is presented for conducting electrical current to a superconducting device. the superconducting lead comprises first and second sections arranged one after the other along the lead, such that when the lead is brought to the superconducting device, the first and second sections are respectively proximal and distal sections with respect to the superconducting device, the proximal and distal sections being configured such that they differ from one another in at least one of heat conductance and working current.

Disclosed is a method for manufacturing a superconducting wire material having a laminated structure. The present invention provides a method for manufacturing a laminated superconducting wire material, comprising the steps of: providing a deposition substrate having a predetermined width; sequentially forming, on the deposition substrate, a laminated structure including a buffer layer, a superconducting layer and a stabilization layer, thereby forming, on both sides of the deposition substrate, regions in which a metal substrate is exposed in the width direction; providing a lamination substrate, having a width corresponding to the deposition substrate, to the laminated structure; and providing solder to the regions, in which the metal substrate is exposed, to thereby bond the deposition substrate and the lamination substrate.

Provided is a method of forming a superconducting wire, the method including forming a superconducting precursor film on a substrate, the super conducting precursor film containing Re, Ba, and Cu having a composition in which Ba is poor and Cu is rich compared to stoichiometric ReBCO(Gd.sub.1Ba.sub.2Cu.sub.3O.sub.7y, 0y6, Re: Rare earth element), heating the substrate to melt the superconducting precursor film, providing an oxygen gas having an oxygen partial pressure of about 10 mTorr to about 200 mTorr on the molten superconducting precursor film to form a superconducting layer including an epitaxial superconductor biaxially aligned only in the c-axis direction perpendicular to the substrate, and cooling the substrate.

An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer. The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.

An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer. The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.