A magnetic system for uniformly scanning an ion beam across a semiconductor wafer comprises a magnetic scanner having ac and dc coil windings each of which extend linearly along internal pole faces of a magnetic core. The ac and dc coil windings are mutually orthogonal; a time dependent magnetic component causes ion beam scanning while a substantially static (dc) field component allows the ion beam to be bent in an orthogonal plane. The current density in the ac and dc coil windings is uniformly dispersed along the pole faces leading to an improved beam spot uniformity at the wafer. The magnetic system also includes a collimator having first and second mutually opposed symmetrical dipoles defining an aperture between them. The poles of each dipole have a pole face varying monotonically and polynomially in a direction perpendicular to a central axis of the collimator: an increasing pole gap is formed towards that central axis.

There is provided a deflector that produces only a weak resulting combined hexapole field. The deflector (100) has first to sixth coils (11-16). The first to third coils (11-13) are equal in direction of energization. The fourth to sixth coils (14-16) are equal in direction of energization. The first coil (11) and fourth coil (14) are opposite in direction of energization. The first, third, fourth, and sixth coils (11, 13, 14, 16) are equal in electromotive force. The second coil (12) is equal in electromotive force to the fifth coil (15) and twice the electromotive force of the first coil (11).

To provide a charged particle beam device capable of preventing generation of geometric aberration by aligning axes of electrostatic lenses with high accuracy even when center holes of respective electrodes which constitute the electrostatic lens are not disposed coaxially. The charged particle beam device according to the invention includes an electrostatic lens disposed between an acceleration electrode and an objective lens, wherein at least one of the electrodes which constitutes the electrostatic lens is formed of a magnetic body, and two or more magnetic field generating elements are disposed along an outer periphery of the electrode.

A magnetic apparatus and a method of operating the magnetic apparatus can include a scanning electromagnet that redirects a beam of charged particles, a vacuum chamber that prevents the atmosphere from interfering with the charged particles, and, a parallelizing permanent magnet array for parallelizing the beam of charged particles. The parallelizing permanent magnet array can be located proximate to a target comprising a Bremsstrahlung target or an object that is being irradiated. The magnetic field of the scanning electromagnet can be variable to produce all angles necessary to sweep the beam of charged particles across the target and the parallelizing permanent magnet array can be configured from a magnetic material that does not require an electric current.

The present disclosure pertains to a beam deflection device capable of properly deflecting a beam. The present disclosure provides a beam deflection device for deflecting a beam inside a charged particle beam device, said beam deflection device being provided with: one or more electrostatic deflectors (207, 208) each having a pair of electrodes disposed so as to face each other across a beam path in a first direction orthogonal to the beam path; and one or more magnetic deflectors (209) each having a pair of magnetic poles disposed so as to face each other across the beam path in a second direction orthogonal to the beam path and to the first direction. When viewed from an incident direction of the beam, the one or more electrostatic deflectors and the one or more magnetic deflectors are stacked along the beam path such that the pair of electrodes at least partially overlap with the pair of magnetic poles and with a gap between the pair of magnetic poles.

A Wien filter and a charged particle beam imaging apparatus are provided. The Wien filter Wien filter, including a Wien filter body which includes: an electrostatic deflector, including at least one pair of electrodes, respective two electrodes in each pair of which are opposite to each other, each electrode including an electrode body constructed in an arc-shaped form, and respective electrode bodies of respective two electrodes in each pair of the at least one pair of electrodes being arranged concentrically with and opposite to each other in a diameter direction, and the at least one pair of electrodes being configured to generate respective electric fields by cooperation of the respective two electrodes in each pair of the at least one pair of electrodes, in the condition of respective bias voltages applied individually thereon; and a magnetic deflector, including at least one pair of magnetic poles, respective two magnetic poles in each pair of which are opposite to each other, each magnetic pole including a magnetic pole body constructed in an arc-shaped form, and respective magnetic pole bodies of respective two magnetic poles in each pair of the at least one pair of magnetic poles being arranged concentrically with and opposite to each other in the diameter direction, and the magnetic pole bodies of the at least one pair of magnetic poles in the magnetic deflector and the electrode bodies of the at least one pair of electrodes in the electrostatic deflector being arranged concentrically and spaced apart from each other in a circumferential direction, and the at least one pair of magnetic poles being configured to generate respective magnetic fields by cooperation of respective two magnetic poles in each pair of the at least one pair of magnetic poles; a resultant electric field formed collectively by all of the respective electric fields is perpendicular to a resultant magnetic field formed collectively by all of the respective magnetic fields; and each electrode is also provided with a respective first protrusion extending radially inwards from a radial inner side of the respective electrode body thereof, and each magnetic pole is also provided with a second protrusion extending radially inwards from a radial inner side of the respective magnetic pole body thereof.

The invention relates to a method for producing a sample on an object using a material processing device. The invention further relates to a computer program product and a material processing device for carrying out the method. The method comprises guiding a light beam over a surface of the object in a first direction along a first line, with material of the object being ablated when the light beam is guided over the surface of the object, changing the first direction into a second direction, guiding the light beam over the surface of the object in the second direction along a second line, with material of the object being ablated when the light beam is guided over the surface of the object along the second line, wherein the light beam is provided in pulsed fashion and is guided onto the surface of the object in such a way that the light beam ablates material from the object in a first operational state of the light beam device and that the light beam is not guided onto the object in a second operational state, and wherein the sample is produced in the first operational state by ablating material from the object.

The ion implantation method includes (a) moving a wafer adjusted to have a first implantation angle with respect to an ion beam from a beam irradiation range toward a beam non-irradiation range; (b) starting a change of the wafer from the first implantation angle to a second implantation angle while the wafer is moved within the beam non-irradiation range after the wafer having the first implantation angle is moved from the beam irradiation range; (c-1) reversing a movement direction of the wafer at an end of the beam non-irradiation range and moving the wafer toward the beam irradiation range; and (c-2) completing the change of the wafer from the first implantation angle to the second implantation angle while the wafer is moved within the beam non-irradiation range before the wafer is returned to the beam irradiation range.

An object receiving container may receive an object which is examinable, analyzable and/or processable at cryo-temperatures. An object holding system may comprise an object receiving container. A beam apparatus or an apparatus for processing an object may comprise an object receiving container or an object holding system. An object may be examined, analyzed and/or processed using an object receiving container or an object holding system. The object receiving container may comprise a first container unit, a cavity for receiving the object, a second container unit, which is able to be brought into a first position and/or into a second position relative to the first container unit, and at least one fastening device which is arranged at the first container unit or at the second container unit for arranging the object receiving container at a holding device.

A magnetic apparatus and a method of operating the magnetic apparatus can include a scanning electromagnet that redirects a beam of charged particles, a vacuum chamber that prevents the atmosphere from interfering with the charged particles, and, a parallelizing permanent magnet array for parallelizing the beam of charged particles. The parallelizing permanent magnet array can be located proximate to a target comprising a Bremsstrahlung target or an object that is being irradiated. The magnetic field of the scanning electromagnet can be variable to produce all angles necessary to sweep the beam of charged particles across the target and the parallelizing permanent magnet array can be configured from a magnetic material that does not require an electric current.