A device for treating or acting on workpiece surfaces by means of an actuator, such as a cutting or engraving laser or a nozzle for applying oils, paints, adhesives, dyes, or etchants is disclosed. An ultrasonic levitation force field is generated by means of a sonotrode, which is coupled to the actuator into a working unit, such that the movably suspended working unit is supported on the workpiece surface in a hovering manner. The ultrasonic levitation force field allows a highly precise positioning of the working unit relative to the workpiece surface so as to allow a precise treatment or machining of the workpiece surface.

A treatment method performed by a film processing apparatus including: a first discharge electrode unit and a second discharge electrode unit respectively including magnets that form a magnetic field; and an AC power source capable of alternately switching polarities of the first discharge electrode unit and the second discharge electrode unit. In the treatment method, a predetermined surface treatment of a film F is performed by generating a plasma P while alternately switching polarities of the first discharge electrode unit and the second discharge electrode unit by using high-frequency power supplied from the AC power source.

A high throughput deposition apparatus includes a vacuum chamber comprising a first processing chamber, a plurality of elongated deposition sources in parallel in the first processing chamber, wherein each of the elongated deposition sources can include a gas distribution channel that provides a deposition material in a gas form, and an electrode configured to generate a plasma in the deposition material, and a web transport mechanism configured to move a plurality of workpiece webs passing by the elongated deposition sources in the first processing chamber. The plurality of workpiece webs are parallel to each other and are configured to receive the deposition material in the first process chamber.

In order to suppress deformation of a flexible substrate, a deposition method according to an embodiment of the present invention includes pre-treatment of exhausting a vacuum chamber until a water partial pressure inside the vacuum chamber becomes equal to or lower than a desired value. Plasma is generated by applying an alternate current (AC) voltage between a first chromium target and a second chromium target, the first chromium target and the second chromium target being arranged inside the vacuum chamber. A chromium layer is formed on a deposition surface of a flexible substrate arranged facing the first chromium target and the second chromium target.

A feedback system for controlling properties of a single layer or multiple layer stack is applied on a substrate by means of a vacuum coating process controlled by a plurality of process controlling means. The system includes at least one monitoring device for at least implementing at least two distinct measurement techniques for determining measurement signals at each of a plurality of locations spatially distributed over the coated substrate; at least one processing unit adapted for at least receiving the measurement signals; and a controller for at least providing actuation signals for actuating the plurality of process controlling means.

A shielded sputter deposition system and method, the system including a process module including: a vacuum enclosure configured to receive a moving substrate, sputtering targets disposed in the vacuum enclosure, each sputtering target including a target material, and a peripheral shield disposed between the and substrate and an interstitial space located between adjacent sputtering targets. The peripheral shield may be configured to at least partially block indirect deposition of sputtered target material onto the substrate and to permit direct deposition of the sputtered target material onto the substrate.

In one aspect, a method is described. The method may include exposing a printing surface to a first plasma in order to increase a hydrophilicity of the printing surface. The method may further include, after increasing the hydrophilicity of the printing surface, depositing a printing material on the printing surface. Additionally, the method may include, after depositing the printing material on the printing surface, exposing the printing surface to a second plasma in order to increase a hydrophobicity of the printing surface.

A method and apparatus for coating and baking and deposition of surfaces on glass substrate or flexible substrate, such as films and thin glass sheets or other similar work pieces as it transitions thru and between small gaps of aero-static or hydro-static porous media bearings and differentially pumped vacuum grooves, in a non-contact manner, in order to process within a vacuum environment. The process is also intended to incorporate simultaneous and immediately sequential ordering of various processes.

This unit comprises a housing (50) for receiving an electrode suitable for creating an electrical discharge, and first means (20, 21, 22) for injecting treatment gas, comprising at least one plasma-forming gas, towards the support of the facility. According to the invention, the first injection means comprise an intake member (20) for the treatment gas, a treatment gas injection member (21), opening opposite the support, and an intermediate chamber (22) connecting these two members. This chamber comprises an upstream region (24), the gas passage cross-section of which increases from the inlet (25E, 26E) towards the outlet (25S, 26S) in longitudinal view (XX) and/or transverse view, as well as a downstream region (27), the passage cross-section of which increases from the inlet (28E, 29E) towards the outlet (28S, 29S) in transverse view but decreases in the vicinity of the outlet (28S, 29S) in longitudinal view (XX). Due to the shape of the chamber and to the changes in direction of the gas in this chamber, the invention confers, in particular, a homogeneous distribution of treatment gas over the entire treatment width of the substrate.

A method of controlling deposition rate of a film deposition in a vacuum multi-plasma-jet system utilizing plasma-chemical reactions in an active discharge zone, wherein the system comprises at least one series of plasma nozzles, the working tubes of which are terminated by a hollow cathode whose mouth is located in the vicinity of the top area of the holding system with the stored substrate, wherein the principle of the solution consists in the deposition of the thin film on the substrate after the individual ignition of the discharges in each plasma nozzle and in the control of their parameters by means of external sources of voltage, the temperature of each hollow cathode is monitored by means of contactless temperature measurement and based on the evaluation of the measured temperature values, the settings of the discharge parameters is provided, with help of an control unit, in particular it is regulated the effective current in each of the plasma nozzles so that the deposition rates of all the hollow cathodes of the plasma nozzles are the same. A device to provide a method for controlling the deposition rate is also provided.