Exemplary semiconductor processing systems include a processing chamber defining a processing region. The semiconductor processing systems may include a foreline coupled with the processing chamber. The foreline may define a fluid conduit. The semiconductor processing systems may include a foreline trap coupled with a distal end of the foreline. The semiconductor processing systems may include a removable insert provided within an interior of the foreline trap. The semiconductor processing systems may include a throttle valve coupled with the foreline trap downstream of the removable insert.

There is provided a dielectric barrier electrical discharge apparatus, system and method. The apparatus comprises at least two electrodes arranged in use to provide at least one anode and at least one cathode an electric field thereby being establishable therebetween, the at least two electrodes being separated to allow a fluid to be present between the electrodes in use. At least one of the electrodes has a dielectric portion connected to at least part of said electrode, and a sub-macroscopic structure is connected to at least one of the electrodes or dielectric portion.

The subject of the invention is a method and device for reducing contamination in a plasma reactor, especially contamination by lubricants, particularly for plasma processing of materials. The method is based on the fact that the contaminated gas pumped out of at least one reduced pressure vacuum chamber in the form of a plasma lamp (LA.sub.1, LA.sub.2, LA.sub.3) is purified in at least one purifying plasma lamp (LA.sub.01, LA.sub.02, LA.sub.H, LA.sub.E), in which a glow discharge is initiated between the anodes of the purifying plasma lamp (A01, A02) and the cathodes of the purifying plasma lamp (K.sub.01, K.sub.02), favorably particles of lubricants are cracked and partially polymerized, while processed heavy particles of lubricants are collected in a buffer tank (ZB) and then discharged outside the pumping system. The device contains at least one reduced pressure vacuum chamber in the form of a plasma lamp (LA.sub.1, LA.sub.2, LA.sub.3), it is connected to at least one purifying plasma lamp (LA.sub.01, LA.sub.02, LA.sub.H, LA.sub.E) with a buffer tank (ZB) connected to a vacuum pump (PP). The vacuum tube connecting the plasma lamps (LA.sub.1, LA.sub.2, LA.sub.3) with the purifying plasma lamp (LA.sub.01, LA.sub.02, LA.sub.H, LA.sub.E)) is equipped with a dosing valve (V) for the gaseous admixture medium (MD) to plasma lamps (LA.sub.1, LA.sub.2, LA.sub.3), from which radiation (R.sub.1, R.sub.2, R.sub.3) is directed to the processed material (OM).

Proposed is a powder removing apparatus using a screw cylinder for a gas processing facility, in which the powder removing apparatus has a structure in which a scraper is coupled to the screw cylinder that allows a piston rod to be moved forward while being rotated in one direction and to be moved backward while being rotated in a reverse direction according to a supply direction of fluid, thereby allowing the powder adhered to an inner circumferential surface of a pipeline of the gas processing facility or an inner wall surface of the gas processing facility to be easily and efficiently removed. According to an embodiment of the present disclosure, the powder removing apparatus includes the screw cylinder and a scraper.

A plasma processing method for efficiently processing a wafer using plasma which includes two processing steps and a bridging step between the two processing steps. The plasma processing method includes: supplying a processing-use gas into a processing chamber during a processing step; supplying a bridging-use gas into the processing chamber during a bridging step; switching the supply of the processing-use gas from a first gas supply unit and the bridging-use gas from a second gas supply unit to the processing chamber in transition between the two processing steps and the bridging step; and regulating a flow rate of the bridging-use gas to be supplied during the bridging step to a flow rate regarded equal to a supply amount of the processing-use gas to be supplied during a succeeding processing step out of the two processing steps.

Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.

Embodiments described herein relate to a heat exchanger for abating compounds produced in semiconductor processes. When hot effluent flows into the heat exchanger, a coolant can be flowed to walls of a heat exchanging surface within the heat exchanger. The heat exchanging surface can be a curved shaped which creates a multi stage cross flow path for the hot effluent to flow down the heat exchanger. This flow path forces the hot effluent to hit the cold walls of the heat exchanging surface, significantly cooling the effluent and preventing it from flowing directly into the vacuum pumps and causing heat damage. Embodiments described herein also relate to methods of forming a heat exchanger. The heat exchanger can be created by sequentially depositing layers of thermally conductive material on surfaces using 3-D printing, creating a much smaller foot print and reducing costs.

Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.

Disclosed is a plasma treatment apparatus that includes a cover attached to a body part, a plasma generation unit that generates plasma and provides the plasma to the cover, a gas supply unit that supplies a source gas for generating the plasma to the plasma generation unit, and an exhaust unit that exhausts an exhaust gas from the cover.

A plasma processing apparatus includes: a processing container in which a mounting stage mounted with a substrate is provided and a plasma process is performed on the substrate; an exhaust passage which is provided around the mounting stage and through which a gas containing a by-product released by the plasma process flows; and a first adsorption member which is arranged along an inner wall surface of the exhaust passage and of which a surface is roughened to adsorb the by-product.