Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.

Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least chromium oxide, wherein the ferromagnetic material sputtering target contains one or more types among Y, Mg, and Al in a total amount of 10 wtppm or more and 3000 wtppm or less, and has a relative density of 97% or higher. The provided ferromagnetic material sputtering target containing chromium oxide can maintain high density, has uniformly pulverized oxide phase grains therein, and enables low generation of particles.

Provided is a Fe—Co-based alloy sputtering target material having a composition represented as an atomic ratio by the compositional formula: (Fe.sub.a—Co.sub.100-a).sub.100-b-c-d—Ta.sub.b—Nb.sub.c-M.sub.d, wherein 0<a≦80, 0≦b≦10, 0≦c≦15, 5≦b+c≦15, 2≦d≦20, 15≦b+c+d≦25, and M represents one or more elements selected from the group consisting of Mo, Cr and W, with the balance consisting of unavoidable impurities, wherein the sputtering target material has a bending fracture strain ε.sub.fB at 300° C. of 0.4% or more.

The present invention relates to sputter targets for electrochemical device layer deposition comprising a lithium-containing target material with near-metallic electrical conductivity which includes (a) at least one metal and (b) a lithium-containing material, the lithium-containing material being selected from the group consisting of lithium metal and a lithium-containing salt, wherein the at least one metal and the lithium-containing material are formed into the lithium-containing target material and wherein the lithium-containing target material is configured with a composition sufficient for physical vapor deposition of a lithium-containing electrode of the electrochemical device in a single step, the lithium-containing electrode as deposited requiring no further lithium doping. Furthermore, the composition of the metallic lithium-containing target material may be configured to provide a low enough electrical resistance to permit DC sputtering. Chambers and tools including the sputter target and process flows for fabricating electrochemical devices including steps utilizing the sputter target are also described.

A sputtering target having a one-piece top coat comprising a mixture of oxides of zinc, tin, and optionally gallium, characterized in that said one-piece top coat has a length of at least 80 cm; a method for forming such a sputtering target and the use of such a target for forming films.

A magnetic material sputtering target characterized in that, in a plane for observing the oxide in the target, oxide grains in the target have an average diameter of 1.5 μm or less, and that 60% or more of the oxide grains in the observing plane of the target have a difference between a maximum diameter and a minimum diameter of 0.4 μm or less, where the maximum diameter is a maximum distance between arbitrary two points on the periphery of an oxide grain, and the minimum diameter is a minimum distance between two parallel lines across the oxide grain. A non-magnetic grain dispersion-type magnetic material sputtering target that can inhibit abnormal discharge due to an oxide causing occurrence of particles during sputtering is obtained.

Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. In various embodiments, a counter electrode is fabricated to include a base anodically coloring material and one or more additives.

Embodiments relate to a sputter chamber comprising both a target surface and an anode surface. The sputter chamber has both an ingress and an egress to allow passage of a gas. The sputter chamber further includes a target substrate. A secondary material flexibly changes the composition of the target substrate in-situ by changing coverage of the target by the secondary material. Gas entering the sputter chamber interacts with the changed composition of the target. The interaction discharges a plasma alloy and the alloy condenses on the anode surface in the sputter chamber. The condensed alloy produces an alloy film.

A W.sub.18O.sub.49 peak is confirmed by X-ray diffraction analysis of a sputtering surface and a cross section orthogonal to the sputtering surface, a ratio I.sub.S(103)/I.sub.S(010) of a diffraction intensity I.sub.S(103) of a (103) plane to a diffraction intensity I.sub.S(010) of a (010) plane of W.sub.18O.sub.49 of the sputtering surface is 0.38 or less, a ratio I.sub.C(103)/I.sub.C(010) of a diffraction intensity I.sub.C(103) of the (103) plane to a diffraction intensity I.sub.C(010) of the (010) plane of W.sub.18O.sub.49 of the cross section is 0.55 or more, and an area ratio of W.sub.18O.sub.49 phase of a surface parallel to the sputtering surface is 37% or more.

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.

A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.