A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.

A method for processing a surface, having an initial topology, using a particle beam can include processing of the surface using the particle beam at a first angle of the particle beam with respect to the surface in accordance with a target topology of the surface. The method can furthermore include subsequent processing of the surface using the particle beam at a second angle of the particle beam with respect to the surface in accordance with the target topology of the surface, wherein the second angle differs from the first angle.

A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a mass resolving apparatus having a resolving aperture, in which the resolving aperture may be moved in the X and Z directions. Additionally, a controller is able to manipulate the mass analyzer and quadrupole lenses so that the crossover point of desired ions can also be moved in the X and Z directions. By manipulating the crossover point and the resolving aperture, the parameters of the ribbon ion beam may be manipulated to achieve a desired result. Movement of the crossover point in the X direction may affect the mean horizontal angle of the beamlets, while movement of the crossover point in the Z direction may affect the horizontal angular spread and beam current.

Implanting a material in a pattern hardens the material in the pattern for subsequent etching. When the region is etched, by ion beam sputtering, chemically enhanced charged particle beam etching, or chemical etching, a thicker structure remains because of the reduced etch rate of the hardened pattern. The invention is particularly useful for the preparation of thin lamella for viewing on a transmission electron microscope.

The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.

A method of forming one or more protrusions on an outer surface of a polished face of a solid state material, said method including the step of applying focused inert gas ion beam local irradiation towards an outer surface of a polished facet of a solid state material in a way of protruding top surface material; wherein irradiated focused inert gas ions from said focused inert gas ion bean penetrate the outer surface of said polished facet of said solid state material; and wherein irradiated focused inert gas ions cause expansive strain within the solid state crystal lattice of the solid state material below said outer surface at a pressure so as to induce expansion of solid state crystal lattice, and form a protrusion on the outer surface of the polished face of said solid state material.

A method of forming one or more protrusions on an outer surface of a polished face of a solid state material, said method including the step of applying focused inert gas ion beam local irradiation towards an outer surface of a polished facet of a solid state material in a way of protruding top surface material; wherein irradiated focused inert gas ions from said focused inert gas ion bean penetrate the outer surface of said polished facet of said solid state material; and wherein irradiated focused inert gas ions cause expansive strain within the solid state crystal lattice of the solid state material below said outer surface at a pressure so as to induce expansion of solid state crystal lattice, and form a protrusion on the outer surface of the polished face of said solid state material.

Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas.

A nanopore structure includes an aperture extending from a first surface to a second surface of a substrate, the aperture having a wall comprising gold ions embedded in the substrate, the wall defining a first diameter; a first deoxyribonucleic acid (DNA) layer including a thiolated DNA strand covalently bonded to the embedded gold ions within the wall of the aperture; and a second DNA layer hydrogen bonded to the first DNA layer, the second DNA layer defines a substantially cylindrical nanopore that defines a second diameter within the wall of the aperture, the second DNA layer including a single-stranded DNA strand; wherein the second diameter is less than the first diameter.

A nanopore structure includes an aperture extending from a first surface to a second surface of a substrate, the aperture having a wall comprising gold ions embedded in the substrate, the wall defining a first diameter; a first deoxyribonucleic acid (DNA) layer including a thiolated DNA strand covalently bonded to the embedded gold ions within the wall of the aperture; and a second DNA layer hydrogen bonded to the first DNA layer, the second DNA layer defines a substantially cylindrical nanopore that defines a second diameter within the wall of the aperture, the second DNA layer including a single-stranded DNA strand; wherein the second diameter is less than the first diameter.