Systems, apparatus, and methods are disclosed for foreline diagnostics and control. A foreline coupled to a chamber exhaust is instrumented with one or more sensors, in some embodiments placed between the chamber exhaust and an abatement system. The one or more sensors are positioned to measure pressure in the foreline as an indicator of conductance. The sensors are coupled to a trained machine learning model configured to provide a signal when the foreline needs a cleaning cycle or when preventive maintenance should be performed. In some embodiments, the trained machine learning predicts when cleaning or preventive maintenance will be needed.

An etching composition includes phosphate ions, pyrophosphate ions, polyphosphate ions, or a combination thereof and an oxidant. The etching composition has a neutral or basic pH.

Methods of forming SOI substrates are disclosed. In some embodiments, an epitaxial layer and an oxide layer are formed on a sacrificial substrate. An etch stop layer is formed in the epitaxial layer. The sacrificial substrate is bonded to a handle substrate at the oxide layer. The sacrificial substrate is removed. The epitaxial layer is partially removed until the etch stop layer is exposed.

There is provided a structure manufacturing method, including: preparing a wafer at least whose surface comprises Group III nitride crystal in a state of being immersed in an etching solution containing peroxodisulfate ions; and irradiating the surface of the wafer with light through the etching solution; wherein the group III nitride crystal has a composition in which a wavelength corresponding to a band gap is 310 nm or more, and during irradiation of the light, the surface of the wafer is irradiated with a first light having a wavelength of 200 nm or more and less than 310 nm under a first irradiation condition, and is irradiated with a second light having a wavelength of 310 nm or more and less than a wavelength corresponding to the band gap under a second irradiation condition controlled independently of the first irradiation condition.

A method for making a semiconductor substrate includes: cutting an ingot to obtain a plurality of substrates, each of the substrates including a first surface and a second surface opposite to the first surface; performing a surface treatment on at least one of the first surface and the second surface of each of the substrates using a surface-treating agent; annealing the substrates; and abrasing each of the annealed substrates. A method for making a semiconductor device is also disclosed.

The invention discloses a thin film transistor, a display panel and a method of fabricating the thin film transistor. The thin film transistor includes a substrate, a flat film, a dielectric layer, an active layer, and a source/drain layer which are stacked in sequence from bottom to top; and a plurality of reinforcing portions are disposed on an upper surface of the flat film, wherein the flat film and the reinforcing portions constitute a gate layer, wherein the reinforcing portions are configured to increase an area of the upper surface of the flat film, so as to increase an effective overlapping area between the flat film and the active layer, and reduce a width and a length of the thin film transistor.

An in-line wet bench device for the wet-chemical treatment of semiconductor wafers, comprising a plurality of conveying rollers, each of which is rotatable about an axis of rotation, for the in-line transport of semiconductor wafers along a conveying direction, wherein the axes of rotation are arranged parallel to one another and perpendicular to the conveying direction, the conveying rollers having a cylindrical conveying section which extends axially along the respective axis of rotation and forms a conveying surface in the shape of a cylindrical sleeve. The conveying surface has at least one smooth region with surface roughnesses of less than 10 μm when viewed in the axial direction and rough regions with surface roughnesses of more than 100 μm axially adjacent to the smooth region.

A method for creating an enhanced multipaction resistant diamond-like coating (DLC) coating with lower Secondary Electron Emission (SEE) properties is performed on an initial surface by etching a DLC coating deposited on the surface after deposition and optionally creating interlayers to enhance adhesion mechanical properties between the DLC coating and the initial surface.

An etching method for etching a substrate using a molten alkali, wherein, while an oxide coating is formed on the surface of the substrate PL to be etched in a high-temperature oxygen-containing environment, the surface to be etched is isotropically etched to remove the oxide coating using a molten alkali AL brought into a prescribed high-temperature range.

The invention relates to a method of processing a semiconductor in the semiconductor wafer is disposed on a susceptor in a coating apparatus and processed, wherein an etching gas is passed through the coating apparatus in an etching step. The invention further relates to a control system for controlling a coating apparatus for processing a semiconductor water, to a plant for processing a semiconductor wafer having a coating apparatus which comprises the control system, and a semiconductor wafer. A first side of the semiconductor wafer which has been subjected to a polishing operation by CMP, or a second side of the semiconductor wafer opposite the first side, is coated with a protective layer before processing.