Embodiments of the disclosure provide an integrated circuit (IC) structure. The IC structure may include a first metal layer on a substrate, and a second metal layer on the substrate that is horizontally separated from the first metal layer. A dielectric material may include a first portion on the first metal layer, and having a first upper surface, a second portion on the second metal layer, and having a second upper surface, and a third portion on the substrate between the first metal layer and the second metal layer. The third portion of the dielectric material includes a third upper surface above the first upper surface of the first portion and the second upper surface of the second portion of the dielectric material.

A film deposition method includes maintaining an inside of a chamber to have a predetermined pressure, cooling a stage, on which the object to be processed mounts, to have an ultralow temperature of −20° C., and mounting the object to be processed on the stage, supplying a gas including a low vapor pressure material gas of a low vapor pressure material into the inside of the chamber, and generating plasma from the supplied gas including the gas of the low vapor pressure material, and causing a precursor generated from the low vapor pressure material by the plasma to be deposited on a recess part of the object to be processed.

A polyimide copolymer according to the present invention has a particular structure in which siloxane structures are distributed in a nanosize in a polymer and thus enables excellent transparency, heat resistance, mechanical strength and flexibility and effective reduction of residual stress, and thus can be used in various fields such as a substrate for a device, a cover substrate for a display, an optical film, an integrated circuit (IC) package, an adhesive film, a multi-layer flexible printed circuit (FPC), tape, a touch panel and a protective film for an optical disk.

A substrate processing method includes (A) supplying to the substrate a first processing liquid containing a removing agent for deposit, a solvent having a boiling point lower than that of the removing agent and a thickener, (B), after (A), supplying to the substrate a second processing liquid containing an organic polymer to be a gas diffusion barrier film, (C), after (B), heating the substrate at a predetermined temperature equal to or higher than the boiling point of the solvent and lower than the boiling point of the removing agent to promote evaporation of the solvent and reaction between the deposit and the removing agent, and (D), after (C), supplying a rinsing liquid to the substrate to remove the deposit from the substrate. The gas diffusion barrier film prevents a gaseous reactive product generated by the reaction in (C) from diffusing around the substrate.

To manufacture an integrated circuit (IC) device, a structure in which a first material film including silicon atoms and nitrogen atoms and a second material film devoid of nitrogen atoms is formed on a substrate. A carbonyl compound having a functional group without an α-hydrogen is applied to the structure, and thus, an inhibitor is selectively formed only on an exposed surface of the first material film from among the first material film and the second material film.

A film forming apparatus comprises: a processing chamber in which a substrate is accommodated; a gas supply configured to supply a gas containing a first monomer and a gas containing a second monomer into the processing chamber; a concentration distribution controller configured to control a gas flow within the processing chamber such that a concentration of a mixed gas including the gas containing the first monomer and the gas containing the second monomer on the substrate has a predetermined distribution; and a temperature distribution controller configured to control a temperature distribution of the substrate such that a temperature of a first region of the substrate is higher than a temperature of a second region of the substrate, the concentration of the mixed gas in a region corresponding to the first region being higher than the concentration of the mixed gas in a region corresponding to the second region.

A method of manufacturing a semiconductor device includes forming a first resist layer over a substrate, and forming a second resist layer over the first resist layer. The second resist layer is patterned to expose a portion of the first resist layer to form a second resist layer pattern. The first resist layer is exposed to extreme ultraviolet (XUV) radiation diffracted by the second resist layer pattern. Portions of the first resist layer exposed to the XUV radiation diffracted by the second resist layer are removed.

Equipment for coating a wafer is disclosed, where the equipment includes a wafer holder configured to spin the wafer while holding the wafer; a rotary drive configured to spin the wafer holder; a nozzle configured to pour liquid onto a surface to be coated of the wafer; an annular duct disposed circumferentially around the wafer when the wafer is spun by the wafer holder, the duct configured to collect material ejected off an edge of the wafer; and an air knife disposed proximate a backside, the backside being opposite the side to be coated, where the air knife is configured to blow an air curtain through a slot onto an exposed edge region of the backside at a grazing angle of incidence to flow gas radially outward along the backside toward the annular duct.

A substrate processing method according to an embodiment includes a processing liquid supply step and an UV irradiation step. In the processing liquid supply step, a processing liquid is supplied to a substrate. In the UV irradiation step, the substrate after the processing liquid supply step is irradiated with ultraviolet rays having a wavelength of 200 nm or less, so that the substrate after the processing liquid supply step is destaticized.

A substrate processing method is provided. In the method, a substrate is provided. A monomer that is chemically bonded to the substrate is supplied onto the substrate. An initiator for polymerizing the monomer is supplied to the substrate having the supplied monomer thereon, thereby forming a polymer film.