Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.

A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Provided are methods of making a liquid and liquid vapor-proof material, and relates long-term implantable electronic devices. The method comprisies providing a first substrate having a first-side encapsulating layer supported by at least a portion of the first substrate; providing a material onto the first-side encapsulating layer; providing a second substrate having a second-side encapsulating layer supported by at least a portion of the second substrate; covering an exposed surface of the material provided onto the first-side encapsulation layer with the second-side encapsulating layer; wherein said encapsulating layers are substantially defect free so that liquid or liquid vapor is prevented from passing through each of the encapsulating layers; thereby making the liquid or liquid vapor-proof material.

A semiconductor package includes a lower semiconductor chip and semiconductor chips in a stack on the lower semiconductor chip in a first direction perpendicular to a top surface of the lower semiconductor chip. Connection bumps are between the lower semiconductor chip and a bottommost one of the semiconductor chips and between the semiconductor chips, A protection layer covers a lateral surface of each of the connection bumps. A mold layer is on the lower semiconductor chip and covering lateral surfaces of the semiconductor chips. The mold layer extends between the bottommost one of the semiconductor chips and the lower semiconductor chip and between the semiconductor chips. The protection layer is between the mold layer and the lateral surface of each of the connection bumps.

In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.

A device includes a substrate, a gate structure over the substrate, gate spacers on opposite sidewalls of the gate structure, source/drain structures over the substrate and on opposite sides of the gate structure, and a self-assemble monolayer (SAM) in contact with an inner sidewall of one of the gate spacer and in contact with a top surface of the gate structure.

A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N.sub.2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

Removing a stimuli responsive polymer (SRP) from a substrate includes controlled degradation. In certain embodiments of the methods described herein, removing SRPs includes exposure to two reactants that react to form an acid or base that can trigger the degradation of the SRP. The exposure occurs sequentially to provide more precise top down control. In some embodiments, the methods involve diffusing a compound, or a reactant that reacts to form a compound, only to a top portion of the SRP. The top portion is then degraded and removed, leaving the remaining SRP intact. The exposure and removal cycles are repeated.

A composition contains an organic solvent and compound (formula (1)), theoretical molecular weight 999 or less. (Z1 contains a nitrogen-containing heterocyclic ring; U represents a monovalent organic group (formula (2)); and p represents 2 to 4.) (In formula (2), R1 represents an alkylene group having 1 to 4 carbon atoms; A1 to A3 represent a hydrogen atom, or methyl or ethyl group: X represents —COO—, —OCO—, —O—, —S— or —NRa-; Ra represents a hydrogen atom or methyl group; Y represents a direct bond or optionally substituted alkylene group having 1 to 4 carbon atoms; R2, R3 and R4 represent a hydrogen atom or optionally substituted alkyl group having 1 to 10 carbon atoms or aryl group having 6 to 40 carbon atoms; R5 represents a hydrogen atom or hydroxy group; n represents 0 or 1; m1 and m2 represent 0 or 1; and * represents a binding site to Z1.)