A method and structure for forming an enhanced metal capping layer includes forming a portion of a multi-level metal interconnect network over a substrate. In some embodiments, the portion of the multi-level metal interconnect network includes a plurality of metal regions. In some cases, a dielectric region is disposed between each of the plurality of metal regions. By way of example, a metal capping layer may be deposited over each of the plurality of metal regions. Thereafter, in some embodiments, a self-assembled monolayer (SAM) may be deposited, where the SAM forms selectively on the metal capping layer, while the dielectric region is substantially free of the SAM. In various examples, after selectively forming the SAM on the metal capping layer, a thermal process may be performed, where the SAM prevents diffusion of the metal capping layer during the thermal process.

A flexible display and a method of manufacturing the same are disclosed. In one aspect, the method includes forming a sacrificial metal layer over a support substrate, the sacrificial metal layer formed of a metal material, and forming a barrier layer over the sacrificial metal layer, the barrier layer formed of an organic material. The method also includes exposing the sacrificial metal layer to oxygen so as to form a sacrificial metal oxide layer, forming a display unit over the barrier layer, and separating the barrier layer from the support substrate.

A polyimide precursor composition according to the present invention enables alleviation of thermal expansion-contraction properties of a polyimide film resultingly prepared, by means of using siloxane-based diamine having a particular structure and a solvent having a positive partition coefficient. And the present invention enables excellent transparency, heat resistance, mechanical strength and flexibility and effective reduction of residual stress, and thus can be used in various fields such as a substrate for a device, a cover substrate for a display, an optical film, an integrated circuit (IC) package, an adhesive film, a multi-layer flexible printed circuit (FPC), tape, a touch panel and a protective film for an optical disk.

Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, alcohol, ester, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

A semiconductor device includes a semiconductor substrate, a source/drain region, a source/drain contact, a conductive via and a first polymer layer. The source/drain region is in the semiconductor substrate. The source/drain contact is over the source/drain region. The source/drain via is over the source/drain contact. The first polymer layer extends along a first sidewall of the conductive via and is separated from a second sidewall of the conductive via substantially perpendicular to the first sidewall of the conductive via.

A via for semiconductor devices is disclosed. Implementations of vias for semiconductor devices may include: a semiconductor substrate that includes a first side; a via extending from the first side of the semiconductor substrate to a pad; a polymer layer coupled along an entire sidewall of the via, the polymer layer in direct contact with the pad; and a metal layer directly coupled over the polymer layer and directly coupled with the pad.

A composition for forming a resist underlayer film exhibits strong etching resistance, has a good dry etching rate ratio and a good optical constant, and is capable of forming a film that provides good coverage over a so-called multilevel substrate and that is flat with reduced difference in thickness after embedding. A resist underlayer film uses said composition for forming a resist underlayer film; and a method for producing a semiconductor device. The composition for forming a resist underlayer film contains: a polymer having the partial structure represented by formula (1); and a solvent. (In the formula, Ar represents an optionally substituted C6-20 aromatic group.)

Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CH.sub.xF.sub.y gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH.sub.3—NF.sub.3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.

Methods and systems for forming a structure including multiple carbon layers and structures formed using the methods or systems are disclosed. Exemplary methods include forming a first carbon layer with an initial first flowability and a second carbon layer with an initial second flowability, wherein first flowability is less than second flowability.

A method for processing a substrate for processing a substrate includes: (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region using plasma generated from a processing gas through the patterned region. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer.