Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

Systems and methods for passivation of III-V semiconductors to create heterogeneous structures based on such semiconductors, to the structures themselves, and to devices using passivated III-V semiconductors, such as metal oxide-semiconductor field effect transistors (MOSFET) and Hall effect sensors using III-V semiconductors.

A method of manufacturing a semiconductor device, including: providing a substrate including a first cell and a second cell, the first cell and the second. cell are arranged in a first direction; forming a plurality of first metal strips arranged in a second direction and extending in the first direction on a first plane; forming a first trench over a boundary between the first cell and the second cell, a bottom surface of the first trench is located on a second plane over the first plane; filling the first trench with a non-conductive material, resulting in a separating wall extending in the first direction; and fort plurality of second metal strips extending in the second direction on a third plane over the second plane and including a first second metal strip and a second second metal strip separated by the separating wall.

A method for depositing a metal oxynitride film by epitaxial growth at a low temperature is provided. It is a method for manufacturing a metal oxynitride film, in which the metal oxynitride film is epitaxially grown on a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced. The oxide target contains zinc, the substrate during the deposition of the metal oxynitride film is higher than or equal to 80° C. and lower than or equal to 400° C., and the flow rate of the nitrogen gas is greater than or equal to 50% and lower than or equal to 100% of the total flow rate of the gas.

Methods of forming an integrated device, and in particular forming one or more sample wells in an integrated device, are described. The methods may involve forming a metal stack over a cladding layer, forming an aperture in the metal stack, forming first spacer material within the aperture, and forming a sample well by removing some of the cladding layer to extend a depth of the aperture into the cladding layer. In the resulting sample well, at least one portion of the first spacer material is in contact with at least one layer of the metal stack.

A method for producing a doping raw-material solution for film formation includes a step of firstly mixing a solute including a halogen-containing organic dopant compound or a dopant halide with a first solvent, but not with other solvents to prepare a dopant precursor solution separately from a film-forming raw material, where an acidic solvent is used as the first solvent. A method for producing a doping raw-material solution for film formation enables stable formation of a high-quality thin film having excellent electric characteristics.

A semiconductor device is provided. The semiconductor device includes a stack structure disposed on a lower structure; an insulating structure disposed on the stack structure; and a vertical structure extending in a direction perpendicular to an upper surface of the lower structure and having side surfaces opposing the stack structure and the insulating structure. The stack structure includes interlayer insulating layers and gate layers, alternately stacked, and the insulating structure includes a lower insulating layer, an intermediate insulating layer on the lower insulating layer, and an upper insulating layer on the intermediate insulating layer.

The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for improving the physical properties of a thin film formed on a substrate. An embodiment of a substrate processing method according to the present disclosure comprises the steps of: carrying a substrate into a first chamber; a first pressurizing step increasing the pressure in the first chamber so that the pressure in the first chamber reaches a first high-pressure that is higher than the normal pressure; a first depressurizing step decreasing the pressure in the first chamber so that the pressure in the first chamber reaches a second high-pressure that is lower than the first high-pressure and equal to or higher than the normal pressure; a first pressurizing/depressurizing repeating step performing the first pressurizing step and the first depressurizing step repeatedly at a predetermined number of times; and a second depressurizing step decreasing the pressure in the first chamber so that the pressure in the first chamber reaches a first low-pressure that is lower than the normal pressure.

A method includes providing a dielectric layer; forming a metal line in the dielectric layer; forming an etch stop layer on the metal line, wherein the etch stop layer includes a metal atom bonded with a hydroxyl group; performing a treatment process to the etch stop layer to displace hydrogen in the hydroxyl group with an element other than hydrogen; partially etching the etch stop layer to expose the metal line; and forming a conductive feature above the etch stop layer and in physical contact with the metal line.

Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.