To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.

[Problem] To provide a perhydropolysilazane making it possible to form a siliceous film with minimal defects, and a curing composition comprising the perhydropolysilazane. [Means for Solution] The present invention provides a perhydropolysilazane having a weight-average molecular weight of 5,000 to 17,000, characterized in that when .sup.1H-NMR of a 17% by weight solution of said perhydropolysilazane dissolved in xylol is measured, the ratio of the amount of SiH.sub.1,2 based on the aromatic ring hydrogen content of the xylol is 0.235 or less and the ratio of the amount of NH based on the aromatic ring hydrogen content of the xylol is 0.055 or less, and a curing composition comprising the perhydropolysilazane. The present invention also provides a method for forming a siliceous film, comprising coating the curing composition on a substrate and heating.

The present disclosure provides a method for forming a semiconductor structure. The method includes providing a substrate including a plurality of fin structures on the substrate; coating a first solution on the substrate to form a first dielectric layer; and coating a second solution on the first dielectric layer to form a second dielectric layer to cover the fin structures. The first solution has a first viscosity. The second solution has a second viscosity. In some embodiments, the second viscosity is greater than the first viscosity.

A substrate processing method includes applying a solution of a compound containing a metal oxide to a surface of a wafer to form a liquid film of the solution on the surface of the wafer, heating the liquid film at a first temperature lower than a crosslinking temperature of the compound, and irradiating the liquid film with energy rays to form a coating film containing the metal oxide on the surface, after heating the liquid film at the first temperature.

The present invention concerns a method for forming a metal layer for electromagnetic shielding and thermal management of active components, preferably by wet chemical metal plating, using an adhesion promotion layer on the layer of molding compound and forming at least one metal layer on the adhesion promotion layer or forming at least one metal layer on the adhesion promotion layer by wet chemical metal plating processes.

A composition for forming an interlayer insulating film including a polymerizable monomer, an imide compound represented by general formula (z-1), a reaction promoter which promotes the polymerization of the polymerizable monomer and the imide compound, and a polymerization initiator, an interlayer insulating film containing a polymerized product thereof, a method for forming an interlayer insulating film pattern, and a device including the interlayer insulating film on a support. In the formula (z-1), R.sup.1 and R.sup.2 represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. R.sub.Z.sup.00 represents a divalent organic group containing an aliphatic hydrocarbon group and/or an aromatic hydrocarbon group, R.sub.z.sup.01 and R.sub.z.sup.02 represent an alkyl group or an alkoxy group, and n.sub.1 and n.sub.2 are 0 or 1.

##STR00001##

A method of manufacturing an integrated circuit including forming trenches into the surface of a crystalline wafer and the trenches extending along a <100> lattice direction is disclosed. Such wafer can experience less deformation due to less stress induced when the trenches are filled using a spin-on dielectric material. Thus, the overlay issue caused by wafer shape change is resolved.

A composition for forming an interlayer insulating film including a polymerizable monomer, an alkali-soluble elastomer containing a polymerizable group, an imide compound represented by general formula (z-1), and a polymerization initiator, an interlayer insulating film containing a polymerized product thereof, a method for forming an interlayer insulating film pattern, and a device including the interlayer insulating film on a support. In the formula (z-1), R.sup.1 and R.sup.2 represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R.sub.z.sup.00 represents a divalent organic group containing an aliphatic hydrocarbon group and/or an aromatic hydrocarbon group, R.sub.z.sup.01 and R.sub.z.sup.02 represent an alkyl group or an alkoxy group, and n.sub.1 and n.sub.2 are 0 or 1.

##STR00001##

A method for manufacturing a semiconductor device including: a process of applying a sealing composition for a semiconductor to a semiconductor substrate, to form a sealing layer for a semiconductor on at least the bottom face and the side face of a recess portion of an interlayer insulating layer, the sealing composition including a polymer having a cationic functional group and a weight average molecular weight of from 2,000 to 1,000,000, each of the content of sodium and the content of potassium in the sealing composition being 10 ppb by mass or less on an elemental basis; and a process of subjecting a surface of the semiconductor substrate at a side at which the sealing layer has been formed to heat treatment of from 200° C. to 425° C., to remove at least a part of the sealing layer.

Provided is a method for manufacturing a silicon nanowire array comprising the steps of: positioning plastic particles separated apart from one another in a uniform random pattern on a silicon substrate; forming a catalyst layer between the plastic particles; removing the plastic particles; vertically etching portions of the silicon substrate that contact the catalyst layer; and removing the catalyst layer. The present invention provides a simple and cost-effective process, enables mass-production through large surface area processing, enables the manufacture of nanowire even at a site having limited resources, and enables the structures of nanowire to be individually controlled.