A non-transitory medium includes instructions to control a spin coating device to render a cleaning nozzle of the spin coating device below a base plate and out of optimal exposure to a substrate material placed on a spin chuck when the base plate is engaged with the spin chuck. In response to disengagement of a lid from the base plate, the non-transitory medium also includes instructions to disengage the base plate from the spin chuck to lower the base plate to a locking point whereupon a portion of the cleaning nozzle below the base plate passes through a hole in the base plate and emerges completely out of and above the base plate, and instructions to clean the bottom surface and/or the edges of the substrate material utilizing the cleaning nozzle based on an optimal exposure to the bottom surface and the edges of the substrate material.

FinFET structures and methods of forming the same are disclosed. In a method, a recess is formed exposing a plurality of semiconductor fins on a wafer. A dummy contact material is formed in the recess. The dummy contact material contains carbon. The dummy contact material is cured with one or more baking steps. The one or more baking steps harden the dummy contact material. A first portion of the dummy contact material is replaced with an inter-layer dielectric. A second portion of the dummy contact material is replaced with a plurality of contacts. The plurality of contacts are electrically coupled to source/drain regions of the plurality of semiconductor fins.

A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si—H groups)/(Si—H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.

A method for forming multi-layer film on substrate, which includes steps (1) forming under layer film on substrate by applying under layer film material containing resin having repeating unit represented by the general formula (1) or (2) in which fluorene structure is contained, and curing the same by heat treatment, (2) forming metal oxide film on the under layer film by applying metal oxide film material selected from titanium oxide film material, zirconium oxide film material, and hafnium oxide film material, (3) forming hydrocarbon film on metal oxide film by applying hydrocarbon film material, and (4) forming silicon oxide film on the hydrocarbon film by applying silicon oxide film material. There can be provided a method for forming multi-layer film that can reduce reflectance, and useful for a patterning process with high dimensional accuracy of dry etching. ##STR00001##

The present invention provides a method for forming an organic film, including: forming a coating film by spin coating of an organic film-forming composition onto a substrate having an uneven pattern, and thereafter subjecting the substrate to a vibration treatment, and after or simultaneously with the vibration treatment, insolubilizing the coating film to an organic solvent to form the organic film. This provides a method for forming an organic film that can fill an uneven pattern on a substrate to highly flatten a substrate at low cost in a production step of a semiconductor apparatus, etc.

A residual stress in a PZT type ferroelectric film 12 formed on a substrate body 11 by a sol-gel process is −14 MPa to −31 MPa, and the ferroelectric film 12 is crystal oriented in a (100) plane.

Provided is a technology for efficiently obtaining a metal oxide film having good adhesiveness. A method of producing a metal oxide film includes: an application step of applying a solution containing an organic metal complex onto a substrate; an ozone exposure step of exposing the resultant coating film to ozone; and a heating step of heating the coating film.

A method for coating substrates provided with vias uses a first step in which the substrate is conditioned and a second step in which the substrate is coated with an electrically insulating material such that the vias are filled up completely.

A chemical liquid application apparatus according to one embodiment includes: a processing unit which applies a chemical liquid to a substrate; and a viscosity adjustment unit including a viscosity adjustment bottle which mixes a chemical liquid and a diluent. The viscosity adjustment bottle includes a first introduction port into which the chemical liquid is introduced, a second introduction port into which the diluent diluting the chemical liquid is introduced, a porous body which is connected to the first and second introduction ports and includes a plurality of holes through which the chemical liquid and the diluent introduced from the first and second introduction ports flow, and a discharge port which is connected to the porous body and from which the mixture of the chemical liquid and the diluent is discharged.

A spin on carbon composition, comprises: a carbon backbone polymer; a first crosslinker; and a second crosslinker. The first crosslinker reacts with the carbon backbone polymer to partially crosslink the carbon backbone polymer at a first temperature, and the second crosslinker reacts with the carbon backbone polymer to further crosslink the carbon backbone polymer at a second temperature higher than the first temperature. The first crosslinker is a monomer, oligomer, or polymer. The second crosslinker is a monomer, oligomer, or polymer. The first and second crosslinkers are different from each other. When either of the first crosslinker or the second crosslinker is a polymer, the polymer is a different polymer than the carbon backbone polymer.