A manufacturing method of a metal grid includes: providing a base substrate; forming a pattern including a first dielectric layer on the base substrate through a patterning process such that the first dielectric layer has a first groove in a lattice shape; forming a second dielectric layer on a side of the first dielectric layer away from the base substrate such that the second dielectric layer is deposited at least on a sidewall of the first groove to form a second groove in a lattice shape; and forming a metal material in the second groove, and removing at least a part of a material of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate, to form a metal grid.

A device includes a substrate; a first layer over the substrate, the first layer containing a plurality of fin features and a trench between two adjacent fin features. The device also includes a porous material layer having a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed on a top surface of the first layer. The first and the second portions contain substantially same percentage of Si, substantially same percentage of O, and substantially same percentage of C.

A method for shallow trench isolation structures in a semiconductor device and a semiconductor device including the shallow trench isolation structures are disclosed. In an embodiment, the method may include forming a trench in a substrate; depositing a first dielectric liner in the trench; depositing a first shallow trench isolation (STI) material over the first dielectric liner, the first STI material being deposited as a conformal layer; etching the first STI material; depositing a second STI material over the first STI material, the second STI material being deposited as a flowable material; and planarizing the second STI material such that top surfaces of the second STI material are co-planar with top surfaces of the substrate.

A planarization method includes forming a dielectric layer over a polish stop layer. The dielectric layer is polished until reaching the polish stop layer, and the polished dielectric layer has a concave top surface. A compensation layer is formed over the concave top surface. The compensation layer is polished.

A composition for forming a resist underlayer film exhibits strong etching resistance, has a good dry etching rate ratio and a good optical constant, and is capable of forming a film that provides good coverage over a so-called multilevel substrate and that is flat with reduced difference in thickness after embedding. A resist underlayer film uses said composition for forming a resist underlayer film; and a method for producing a semiconductor device. The composition for forming a resist underlayer film contains: a polymer having the partial structure represented by formula (1); and a solvent. (In the formula, Ar represents an optionally substituted C6-20 aromatic group.)

A composite structure, intended for a planar co-integration of electronic components of different functions, the composite structure including from its base towards its surface: a support substrate made of a first material, the support substrate including cavities each opening into an upper face of the support substrate, the cavities being filled with at least one composite material consisting of a matrix of a crosslinked preceramic polymer, the matrix being charged with inorganic particles; and a thin film made of a second material, the thin film being bonded to the upper face of the support substrate and to the composite material.

Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Provided are methods of making a liquid and liquid vapor-proof material, and relates long-term implantable electronic devices. The method comprisies providing a first substrate having a first-side encapsulating layer supported by at least a portion of the first substrate; providing a material onto the first-side encapsulating layer; providing a second substrate having a second-side encapsulating layer supported by at least a portion of the second substrate; covering an exposed surface of the material provided onto the first-side encapsulation layer with the second-side encapsulating layer; wherein said encapsulating layers are substantially defect free so that liquid or liquid vapor is prevented from passing through each of the encapsulating layers; thereby making the liquid or liquid vapor-proof material.

A method includes forming a barrier layer on a substrate, removing a portion of the barrier layer to yield a patterned barrier layer and an exposed portion of the substrate within a hole in the patterned barrier layer, forming a first portion of a perovskite on the patterned barrier layer and a second portion of the perovskite on the exposed portion of the substrate, and removing the patterned barrier layer, thereby removing the first portion of the perovskite.

A film forming apparatus including, mist-forming unit that turns raw material solution into mist and generates mist, pipe connected to mist-forming unit and transfers carrier gas containing mist, at least one pipe for transferring additive fluid containing one or more types of gas as a main component to be mixed with carrier gas containing mist, pipe that is connected to film forming unit and transfers mixed mist fluid that is mixture of carrier gas containing mist and additive fluid, connecting member connecting pipe for transferring carrier gas containing mist, the pipe for transferring additive fluid, and the pipe for transferring mixed mist fluid, a film forming unit that heat-treats the mist to form a film on a substrate, wherein an angle between the pipe for transferring the additive fluid and the pipe for transferring the mixed mist fluid, which are connected by the connecting member, is 120 degrees or more.