Methods and devices for forming a conductive line disposed over a substrate. A first dielectric layer is disposed over the substrate and coplanar with the conductive line. A second dielectric layer disposed over the conductive line and a third dielectric layer disposed over the first dielectric layer. A via extends through the second dielectric layer and is coupled to the conductive line. The second dielectric layer and the third dielectric layer are coplanar and the second and third dielectric layers have a different composition. In some embodiments, the second dielectric layer is selectively deposited on the conductive line.

An organic EL display device including a plurality of pixels includes an element substrate including a substrate, and a plurality of organic EL elements supported by the substrate and respectively located in the plurality of pixels; and a thin film encapsulation structure covering the plurality of pixels. The thin film encapsulation structure includes a first inorganic barrier layer, an organic barrier layer in contact with a top surface of the first inorganic barrier layer, the organic barrier layer including a plurality of solid portions distributed discretely, and a second inorganic barrier layer in contact with the top surface of the first inorganic barrier layer and top surfaces of the plurality of solid portions of the organic barrier layer. The organic barrier layer is black.

There is provided a surface treatment method of a glass substrate having a pit on a surface thereof, a production method of an array substrate comprising this method, and an array substrate. The method includes: forming a layer of SiO.sub.2 sol at least at a side wall of the pit; and drying the layer of SiO.sub.2 sol to form a smoothening layer so as to smoothen an upper edge and a lower edge of the side wall of the pit.

An organic EL display device including a plurality of pixels includes an element substrate including a substrate, and a plurality of organic EL elements supported by the substrate and respectively located in the plurality of pixels; and a thin film encapsulation structure covering the plurality of pixels. The thin film encapsulation structure includes a first inorganic barrier layer, an organic barrier layer in contact with a top surface of the first inorganic barrier layer, the organic barrier layer including a plurality of solid portions distributed discretely, and a second inorganic barrier layer in contact with the top surface of the first inorganic barrier layer and top surfaces of the plurality of solid portions of the organic barrier layer. The organic barrier layer is black.

There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.

Semiconductor devices and methods of fabricating semiconductor devices are provided. The present disclosure provides a semiconductor device that includes a first fin structure and a second fin structure each extending from a substrate; a first gate segment over the first fin structure and a second gate segment over the second fin structure; a first isolation feature separating the first and second gate segments; a first source/drain (S/D) feature over the first fin structure and adjacent to the first gate segment; a second S/D feature over the second fin structure and adjacent to the second gate segment; and a second isolation feature also disposed in the trench. The first and second S/D features are separated by the second isolation feature, and a composition of the second isolation feature is different from a composition of the first isolation feature.

An organic EL display device (100) including a plurality of pixels includes an element substrate (1) including a substrate, and a plurality of organic EL elements supported by the substrate and respectively located in the plurality of pixels; and a thin film encapsulation structure (10) covering the plurality of pixels. The thin film encapsulation structure includes a first inorganic barrier layer (12), an organic barrier layer (14) in contact with a top surface of the first inorganic barrier layer (12), the organic barrier layer (14) including a plurality of solid portions distributed discretely, and a second inorganic barrier layer (16) in contact with the top surface of the first inorganic barrier layer (12) and top surfaces of the plurality of solid portions of the organic barrier layer (14). The organic barrier layer (14) is black.

A computing device including tight pitch features and a method of fabricating a computing device using colored spacer formation is disclosed. The computing device includes a memory and an integrated circuit coupled to the memory. The integrated circuit includes a first multitude of features above a substrate. The integrated circuit die includes a second multitude of features above the substrate. The first multitude of features and the second multitude of features are same features disposed in a first direction. The first multitude of features interleave with the second multitude of features. The first multitude of features has a first size and the second multitude of features has a second size.

A method for improving EUV lithographic patterning of SnO.sub.2 layers is provided. One method embodiment includes introducing a hydrophobic surface treatment compound into a processing chamber for modifying a surface of an SnO.sub.2 layer. The modification increases the hydrophobicity of the SnO.sub.2 layer. The method also provides for depositing a photoresist layer on the surface of the SnO.sub.2 layer via spin coating. The modification of the surface of the SnO.sub.2 layer enhances adhesion of contact between the photoresist and the SnO.sub.2 layer during and after spin coating.

A method includes providing a dielectric layer; forming a metal line in the dielectric layer; forming an etch stop layer on the metal line, wherein the etch stop layer includes a metal atom bonded with a hydroxyl group; performing a treatment process to the etch stop layer to displace hydrogen in the hydroxyl group with an element other than hydrogen; partially etching the etch stop layer to expose the metal line; and forming a conductive feature above the etch stop layer and in physical contact with the metal line.