A method for forming a semiconductor device and a semiconductor device formed by the method are disclosed. In an embodiment, the method includes depositing a dummy dielectric layer on a fin extending from a substrate; depositing a dummy gate seed layer on the dummy dielectric layer; reflowing the dummy gate seed layer; etching the dummy gate seed layer; and selectively depositing a dummy gate material over the dummy gate seed layer, the dummy gate material and the dummy gate seed layer constituting a dummy gate.

A method of forming a semiconductor device structure is provided. The method includes forming an isolation feature over a semiconductor substrate. The semiconductor substrate includes a fin structure over the isolation feature. Two opposing spacer elements are formed over the isolation feature and across the fin structure so as to define a gate opening. The gate opening exposes the fin structure and the isolation feature and inner sidewalls of the gate opening have carbon-containing hydrophobic surfaces. A gate structure is formed in the gate opening with the carbon-containing hydrophobic surfaces.

The present invention relates to a semiconductor structure and method of forming the same. The semiconductor structure includes a first substrate, a first adhesive/bonding stack on the surface of first substrate, wherein the first adhesive/bonding stack includes at least one first adhesive layer and at least one first bonding layer. The material of first bonding layer includes dielectrics such as silicon, nitrogen and carbon, the material of first adhesive layer includes dielectrics such as silicon and nitrogen, and the first adhesive/bonding stack of semiconductor structure is provided with higher bonding force in bonding process.

A method of processing a substrate, includes: loading the substrate having a silicon-containing film formed thereon into a processing container; a first process of modifying the silicon-containing film by supplying a processing gas containing a halogen-containing gas and a basic gas to the substrate, in a state in which an internal pressure of the processing container is set to a first pressure, to generate a reaction product; a second process of vaporizing the reaction product by setting the internal pressure of the processing container to a second pressure lower than the first pressure; and alternately repeating the modifying the silicon-containing film and the vaporizing the reaction product, wherein subsequent rounds of the first process following the initial first process in the alternately repeating the modifying the silicon-containing film and the vaporizing the reaction product includes supplying the processing gas to the substrate on which the reaction product remains.

The invention provides a method to form and functionalize monolayers on a silicon-rich silicon nitride surface or a silicon surface formed by a nanopore fabrication method known as dielectric breakdown. Thermal, photochemical and radical processing can be used to hydrosilylate nascent silicon and silicon nitride surfaces with various reagents. The conventional need for hydrofluoric acid etching prior to coupling functional groups to the surfaces is thereby completely avoided.

Methods and devices for forming a conductive line disposed over a substrate. A first dielectric layer is disposed over the substrate and coplanar with the conductive line. A second dielectric layer disposed over the conductive line and a third dielectric layer disposed over the first dielectric layer. A via extends through the second dielectric layer and is coupled to the conductive line. The second dielectric layer and the third dielectric layer are coplanar and the second and third dielectric layers have a different composition. In some embodiments, the second dielectric layer is selectively deposited on the conductive line.

There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) selectively forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

A method includes coating a photoresist film over a target layer; performing a lithography process to pattern the photoresist film into a photoresist layer, wherein the photoresist layer has an opening, and the opening of the photoresist layer at least has a first sidewall, a second sidewall non-parallel with the first sidewall, and a first corner connecting the first and second sidewalls; performing a first directional ion bombardment process to the first corner of the photoresist layer along a first direction, wherein the first direction is non-perpendicular to both the first and second sidewalls of the photoresist when viewed from top; and after the first directional ion bombardment process is complete, patterning the target layer using the photoresist layer as a patterning mask.

Semiconductor devices and methods of fabricating semiconductor devices are provided. The present disclosure provides a semiconductor device that includes a first fin structure and a second fin structure each extending from a substrate; a first gate segment over the first fin structure and a second gate segment over the second fin structure; a first isolation feature separating the first and second gate segments; a first source/drain (S/D) feature over the first fin structure and adjacent to the first gate segment; a second S/D feature over the second fin structure and adjacent to the second gate segment; and a second isolation feature also disposed in the trench. The first and second S/D features are separated by the second isolation feature, and a composition of the second isolation feature is different from a composition of the first isolation feature.

An organic EL display device (100) including a plurality of pixels includes an element substrate (1) including a substrate, and a plurality of organic EL elements supported by the substrate and respectively located in the plurality of pixels; and a thin film encapsulation structure (10) covering the plurality of pixels. The thin film encapsulation structure includes a first inorganic barrier layer (12), an organic barrier layer (14) in contact with a top surface of the first inorganic barrier layer (12), the organic barrier layer (14) including a plurality of solid portions distributed discretely, and a second inorganic barrier layer (16) in contact with the top surface of the first inorganic barrier layer (12) and top surfaces of the plurality of solid portions of the organic barrier layer (14). The organic barrier layer (14) is black.