An optoelectronic device includes an oxide substrate, an oxide epitaxial layer arranged on the oxide substrate, and a III-nitride active layer arranged on the oxide epitaxial substrate.

The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. A semiconductor layer of a transistor is formed using a composite oxide semiconductor in which a first region and a second region are mixed. The first region includes a plurality of first clusters containing one or more of indium, zinc, and oxygen as a main component. The second region includes a plurality of second clusters containing one or more of indium, an element M (M represents Al, Ga, Y, or Sn), zinc, and oxygen. The first region includes a portion in which the plurality of first clusters are connected to each other. The second region includes a portion in which the plurality of second clusters are connected to each other.

The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).

Disclosed herein are compositions, methods and devices that allow for water-soluble epitaxial lift-off of III-V. Epitaxial growth of STO/SAO templates on STO (001) and Ge (001) substrates were demonstrated. Partially epitaxial GaAs growth was achieved on STO/SAO/STO substrate templates.

A semiconductor element includes a high-resistivity substrate that includes a -Ga.sub.2O.sub.3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a -Ga.sub.2O.sub.3-based single crystal, and a channel layer on the buffer layer, the channel layer including a -Ga.sub.2O.sub.3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a -Ga.sub.2O.sub.3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a -Ga.sub.2O.sub.3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a -Ga.sub.2O.sub.3-based single crystal including a donor impurity.

An intermediate structure for forming a semiconductor device and method of making is provided. The intermediate device includes (i) a substrate comprising a Ga-based layer, and (ii) optionally, a metal layer on the substrate; wherein at least one of the Ga-based layer and, if present, the metal layer comprises at least a surface region having an isoelectric point of less than 7, usually at most 6.

A mist generator may include a reservoir storing a solution, a plurality of ultrasonic vibrators, a mist delivery path, and a mist collector. The plurality of ultrasonic vibrators may be disposed under the reservoir and configured to apply ultrasonic vibration to the solution stored in the reservoir to generate mist of the solution in the reservoir. The mist delivery path may be configured to deliver the mist from an inside of the reservoir to an outside of the reservoir. The mist collector may be disposed above the solution in the reservoir, wherein an upper end of the mist collector may be connected to an upstream end of the mist delivery path, a lower end of the mist collector may include an opening, and a width of the mist collector may increase from the upper end toward the opening. The plurality of ultrasonic vibrators may be located directly under the opening.

A film forming method of forming a film on a substrate includes: annealing the substrate; and supplying mist of a raw material solution of the film to a surface of the substrate after the annealing while heating the substrate at a temperature lower than a temperature of the substrate during the annealing.

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer.