A semiconductor element includes a high-resistivity substrate that includes a β-Ga.sub.2O.sub.3-based single crystal including an acceptor impurity, an undoped β-Ga.sub.2O.sub.3-based single crystal layer formed on the high-resistivity substrate, and an n-type channel layer that includes a side surface surrounded by the undoped β-Ga.sub.2O.sub.3-based single crystal layer. The undoped β-Ga.sub.2O.sub.3-based single crystal layer includes an element isolation region.

The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. A semiconductor layer of a transistor is formed using a composite oxide semiconductor in which a first region and a second region are mixed. The first region includes a plurality of first clusters containing one or more of indium, zinc, and oxygen as a main component. The second region includes a plurality of second clusters containing one or more of indium, an element M (M represents Al, Ga, Y, or Sn), zinc, and oxygen. The first region includes a portion in which the plurality of first clusters are connected to each other. The second region includes a portion in which the plurality of second clusters are connected to each other.

Disclosed is a method of manufacturing a gallium oxide thin film for a power semiconductor using a dopant activation technology that maximizes dopant activation effect and rearrangement effect of lattice in a grown epitaxial at the same time by performing in-situ annealing in a growth condition of a nitrogen atmosphere at the same time as the growth of a doped layer is finished.

A semiconductor element includes a high-resistivity substrate that includes a β-Ga.sub.2O.sub.3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a β-Ga.sub.2O.sub.3-based single crystal, and a channel layer on the buffer layer, the channel layer including a β-Ga.sub.2O.sub.3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a β-Ga.sub.2O.sub.3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a β-Ga.sub.2O.sub.3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a β-Ga.sub.2O.sub.3-based single crystal including a donor impurity.

A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer structure includes: a corundum structured crystal substrate; and a crystalline film containing a corundum structured crystalline oxide as a major component, the film formed directly on the substrate or with another layer therebetween, wherein the crystal substrate has an off angle from 0.2° to 12.0°, and the crystalline oxide contains one or more metals selected from indium, aluminum, and gallium.

A base substrate includes a supporting substrate and a base crystal layer provided on a main face of the supporting substrate composed of a crystal of a group 13 nitride and having a crystal growth surface. The base crystal layer includes a raised part. A reaction product of a material of the supporting substrate and the crystal of the group 13 nitride, metal of a group 13 element and/or void is present between the raised part and supporting substrate.

In some embodiments, an optoelectronic semiconductor light emitting device includes: a substrate; and a plurality of epitaxial semiconductor layers disposed on the substrate. Each of the epitaxial semiconductor layers can comprise an epitaxial oxide. At least one of the epitaxial semiconductor layers can comprise an optically emissive material of direct bandgap type. At least one of the epitaxial semiconductor layers can comprise (Al.sub.x1Ga.sub.1−x1).sub.2O.sub.3 wherein 0≤x1≤1. The plurality of epitaxial semiconductor layers can comprise: first region comprising a first conductivity type; a second region comprising a not-intentionally doped (NID) intrinsic region; and a third region comprising a second conductivity type. The substrate and the plurality of epitaxial semiconductor layers can be a substantially single crystal epitaxially formed device. The optoelectronic semiconductor light emitting device can be configured to emit light having a wavelength in a range from 150 nm to 425 nm.

An α-Ga.sub.2O.sub.3 semiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in the wavelength range of 250 to 365 nm.

As one embodiment, the present invention provides a method for growing a β-Ga.sub.2O.sub.3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga.sub.2O.sub.3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-Ga.sub.2O.sub.3-based single crystal film on a principal surface of the Ga.sub.2O.sub.3-based substrate at a growth temperature of not lower than 900° C.

Light emitting diode (LED) devices comprise: a patterned substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features; a selective layer comprising a dielectric material located on the surfaces of the integral features, wherein there is an absence of the selective layer on the base surface; and a III-nitride layer comprising a III-nitride material on the selective layer and the base surface.