As an aspect of an embodiment, a crystal contains a metal oxide containing Ga and Mn and having a corundum structure.

[Problem] To provide a crystal laminate structure having a β-Ga.sub.2O.sub.3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga.sub.2O.sub.3 based substrate 10; and a β-Ga.sub.2O.sub.3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga.sub.2O.sub.3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×10.sup.13 to 5.0×10.sup.20 atoms/cm.sup.3.

Light emitting diode (LED) devices comprise: a patterned substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features; a selective layer comprising a dielectric material located on the surfaces of the integral features, wherein there is an absence of the selective layer on the base surface; and a III-nitride layer comprising a III-nitride material on the selective layer and the base surface.

A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. A semiconductor layer of a transistor is formed using a composite oxide semiconductor in which a first region and a second region are mixed. The first region includes a plurality of first clusters containing one or more of indium, zinc, and oxygen as a main component. The second region includes a plurality of second clusters containing one or more of indium, an element M (M represents Al, Ga, Y, or Sn), zinc, and oxygen. The first region includes a portion in which the plurality of first clusters are connected to each other. The second region includes a portion in which the plurality of second clusters are connected to each other.

An oxide semiconductor device has an improved withstand voltage when an inverse voltage is applied, while suppressing diffusion of different types of materials to a Schottky interface. The oxide semiconductor device includes an n-type gallium oxide epitaxial layer, p-type oxide semiconductor layers of an oxide that is a different material from the material for the gallium oxide epitaxial layer, a dielectric layer formed to cover at least part of a side surface of the oxide semiconductor layer, an anode electrode, and a cathode electrode. Hetero pn junctions are formed between the lower surfaces of the oxide semiconductor layers and a gallium oxide substrate or between the lower surfaces of the oxide semiconductor layers and the gallium oxide epitaxial layer.

A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. A first step is performed which disposes a condenser for condensing a laser beam on an irradiated surface of a magnesium oxide single crystal member in a non-contact manner. A second step is performed which forms processing mark lines in parallel by irradiating the laser beam to the surface of the single crystal substrate under designated irradiation conditions to condense the laser beam into an inner portion of the single crystal substrate while moving the condenser and the single crystal substrate relative to each other in a two-dimensional manner. A third step is performed which forms new processing mark lines between the adjacent irradiation lines in the second step to allow planar separation, by irradiating the laser beam to the surface of the single crystal substrate under designated irradiation conditions to condense the laser beam into an inner portion of the single crystal substrate while moving the condenser and the single crystal substrate 20 relative to each other in a two-dimensional manner.

As an aspect of an embodiment, a crystal contains a metal oxide containing Ga and Mn and having a corundum structure.

The disclosure is applicable for the technical field of semiconductor devices manufacturing, and provides a gallium oxide SBD terminal structure. The gallium oxide SBD terminal structure comprises a cathode metal layer, an N.sup.+ high-concentration substrate layer, an N.sup. low-concentration Ga.sub.2O.sub.3 epitaxial layer and an anode metal layer from bottom to top, wherein the N.sup. low-concentration Ga.sub.2O.sub.3 epitaxial layer is within a range of certain thickness close to the anode metal layer; and a doping concentration below the anode metal layer is greater than a doping concentration on two sides of the anode metal layer. Namely, only a doping concentration of the part outside the corresponding area of the anode metal layer is changed, so that the breakdown voltage of the gallium oxide SBD terminal structure is improved under the condition of guaranteeing low on resistance.

A Group III nitride semiconductor for growing a high-quality crystal having a low defect density and a method for producing the Group III nitride semiconductor. The Group III nitride semiconductor includes an RAMO.sub.4 substrate including a single crystal represented by the general formula RAMO.sub.4 (where R represents one or more trivalent elements selected from the group consisting of Sc, In, Y and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn and Cd); a p-type Group III nitride crystal layer disposed on the RAMO.sub.4 substrate; a plurality of n-type Group III nitride crystal layers disposed on the p-type Group III nitride crystal layer; and a Group III nitride crystal layer disposed on the n-type Group III nitride crystal layers.