[Solving Means] An oxide semiconductor thin film according to an embodiment of the present invention includes: an oxide semiconductor that mainly contains In, Sn, and Ge. An atom ratio of Ge/(In+Sn+Ge) is 0.07 or more and 0.40 or less. As a result, it is possible to achieve transistor characteristics with a mobility of 10 cm.sup.2/Vs or more.

A method of preparing a heterojunction material, includes forming a first transition metal on a substrate, forming a second transition metal on the first transition metal, and performing a plasma process containing a chalcogen source on the substrate. The first transition metal and the second transition metal are different from each other.

Embodiments of the disclosure relate to a method for fabricating semiconductor-on-insulator (SemOI) electronic components. In the method, a device wafer is bonded to a handling wafer. The device wafer includes a semiconductor device layer and a buried oxide layer. A substrate is adhered to the handling wafer. The substrate is a glass or a ceramic, and bonding occurs at an interface between the semiconductor device layer and the substrate. Material is removed from the device wafer to expose the buried oxide layer. The substrate is debonded from the handling wafer so as to provide an SemOI electronic component including the substrate, the semiconductor device layer, and the buried oxide layer.

This application discloses a method for manufacturing a thin film transistor, and a display panel. The method for manufacturing a thin film transistor includes steps of providing a substrate; forming an amorphous silicon thin film layer on the substrate; patterning the amorphous silicon thin film layer to form an amorphous silicon layer; forming a metal seed layer made of a nickel disilicide (NiSi.sub.2) material on the amorphous silicon layer; converting the amorphous silicon layer into a polysilicon layer under an induction effect of the metal seed layer and through an annealing treatment; and forming a source and drain layer.

A method for forming a photovoltaic device comprising the steps of: providing a first conductive material on a substrate; depositing a continuous layer of a dielectric material less than 10 nm thick on the first conductive material; annealing the first conductive material and the layer of dielectric material; forming a chalcogenide light-absorbing material on the layer of dielectric material; and depositing a second material on the light-absorbing material such that the second material is electrically coupled to the light-absorbing material; wherein the first conductive material and the dielectric material are selected such that, during the step of annealing, a portion of the first conductive material undergoes a chemical reaction to form: a layer of a metal chalcogenide material at the interface between first conductive material and the dielectric material; and a plurality of openings in the layer of dielectric material; the openings being such to allow electrical coupling between the light-absorbing material and the layer of a metal chalcogenide material. Additionally contemplated is a photovoltaic device formed by this method.

A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

A method for forming a transition metal dichalcogenide monolayer, which includes depositing a transition metal, a transition metal oxide, or a mixture thereof, on a substrate, introducing a chalcogen precursor to the transition metal, the transition metal oxide, or the mixture thereof, in the presence of an etching gas and a carrier gas at a first temperature, to form a transition metal dichalcogenide on the substrate from the transition metal, the transition metal oxide, or the mixture thereof, and subliming the transition metal dichalcogenide on the substrate in the presence of a pulsating supply of a vapor of the chalcogen precursor to form the transition metal dichalcogenide monolayer at a second temperature, wherein the vapor of the chalcogen precursor comprises a chalcogen vapor.

A laser crystallization apparatus includes light sources that emit a first laser beam and a second laser beam; a first beam homogenizer through which the first laser beam passes; a second beam homogenizer through which the second laser beam passes; and an optical array on which the first laser beam passed through the first beam homogenizer and the second laser beam passed through the second beam homogenizer are incident. A first path of the first laser beam passed through the first beam homogenizer and a second path of the second laser beam passed through the second beam homogenizer are different from each other. The first beam homogenizer includes first lenses having a first pitch. The second beam homogenizer includes second lenses having a second pitch. The first pitch of the first lenses and the second pitch of the second lenses are same each other.

A method of manufacturing a low temperature polysilicon thin film includes: forming a buffer layer on a substrate; forming a gate electrode on the buffer layer; forming a patterned raising layer on the gate electrode, wherein the patterned raising layer covers a top surface and a lateral surface of the gate electrode; forming a first diffusion barrier layer on the patterned raising layer; forming a second diffusion barrier layer on the first diffusion barrier layer; forming a silicon layer on the second diffusion barrier layer; annealing the silicon layer to form a polysilicon layer, wherein the polysilicon layer includes a patterned area and a to-be-removed area, the patterned area has the same pattern with the patterned raising layer, and the patterned area is whole directly above the patterned raising layer; and in the polysilicon layer, removing the to-be-removed area, and keeping the patterned area.

A laser processing apparatus includes: a laser light source that generates a laser beam; a first beam splitter on which the laser beam is incident; a second beam splitter on which the laser beam having passed through the first beam splitter is incident; and a homogenizer that controls an energy density of the laser beam emitted from the second beam splitter. The laser beam output from the homogenizer includes a p-polarized component and an s-polarized component, and a ratio of energy intensity of the p-polarized component to the s-polarized component is preferably not lower than 0.74 and not higher than 1.23 on a surface of the workpiece.