A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.

A laser annealing apparatus according to an embodiment includes a laser light source, an annealing optical system, a linear irradiation region along a Y-direction, a moving mechanism configured to change a relative position of the irradiation region with respect to the substrate along an X-direction, an illumination light source configured to generate illumination light for illuminating the substrate along a third direction, and a detector configured to detect detection light reflected, in a fourth direction, on the substrate illuminated by the illumination light so as to photograph an annealed part of the substrate in a linear field of view along the Y-direction. In a YZ-plane view, the third direction is inclined from the vertical direction and the fourth direction is inclined from the vertical direction.

A method of preparing a heterojunction material, includes forming a first transition metal on a substrate, forming a second transition metal on the first transition metal, and performing a plasma process containing a chalcogen source on the substrate. The first transition metal and the second transition metal are different from each other.

Provided are a thin film transistor structure, a manufacturing method thereof, and a display device. The method comprises: providing a substrate (10), and sequentially forming a gate (20), a gate insulating layer (30), an active layer (40), a doped layer (50), a source (610), a drain (620) and a channel region (70) on the substrate (10); placing the channel region (70) in a preset gas atmosphere for heating treatment; wherein, the channel region (70) is placed in a nitrogen atmosphere to heat for a first preset time, in a mixed atmosphere of nitrogen and ammonia to heat for a second preset time, in an ammonia atmosphere to heat for a third preset time; or first heating the channel region (70) for a fourth preset time, finally placing in the ammonia atmosphere to heat for a fifth preset time.

This application discloses a method for manufacturing a thin film transistor, and a display panel. The method for manufacturing a thin film transistor includes steps of providing a substrate; forming an amorphous silicon thin film layer on the substrate; patterning the amorphous silicon thin film layer to form an amorphous silicon layer; forming a metal seed layer made of a nickel disilicide (NiSi.sub.2) material on the amorphous silicon layer; converting the amorphous silicon layer into a polysilicon layer under an induction effect of the metal seed layer and through an annealing treatment; and forming a source and drain layer.

Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the nanocrystals can be irradiated with one or more pulses of light. The pulsed light can be used to substantially remove the ligands from the nanocrystals and leave the nanocrystals unsintered or sintered, thereby providing a semiconductor layer. Layered structures comprising these semiconductor layers with an electrode are also disclosed. Devices comprising such layered structures are also disclosed.

A first laser irradiation, in which an amorphous silicon film is irradiated with a first laser beam for transformation of the amorphous silicon film to a microcrystalline silicon film, and a second laser irradiation, in which a second laser beam moves along a unidirectional direction with the microcrystalline silicon film as a starting point for lateral crystal growth of growing crystals constituting a crystallized silicon film, are carried out to form a microcrystalline silicon film and a crystallized silicon film alternately along the unidirectional direction.

A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters includes the following steps: providing a relaxation substrate that comprises a medium, a flow layer disposed on the medium and, a plurality of strained crystalline semiconductor islands having an initial lattice parameter located on the flow layer, a first group of islands having a first lattice parameter and a second group of islands having a second lattice parameter that is different from the first; and heat treating the relaxation substrate at a relaxation temperature greater than or equal to the glass transition temperature of the flow layer to cause differentiated lateral expansion of the islands of the first and second group. The lattice parameter of the relaxed islands of the first group and the relaxed islands of the second group then have different values.

A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.