A structure including a three-dimensionally stretchable single crystalline semiconductor membrane located on a substrate is provided. The structure is formed by providing a three-dimensional (3D) wavy silicon germanium alloy layer on a silicon handler substrate. A single crystalline semiconductor material membrane is then formed on a physically exposed surface of the 3D wavy silicon germanium alloy layer. A substrate is then formed on a physically exposed surface of the single crystalline semiconductor material membrane. The 3D wavy silicon germanium alloy layer and the silicon handler substrate are thereafter removed providing the structure.

In one aspect, a method includes depositing a first glass layer on a metallization layer and depositing an etch stop layer on the first glass layer. The method further includes depositing a second glass layer on the etch stop layer and polishing the second glass layer down to at least a surface of the etch stop layer.

A laser irradiation apparatus is a laser irradiation apparatus including a plurality of laser light sources, the laser irradiation apparatus including a control unit configured to perform control with regard to laser emitted from the plurality of laser light sources, in which the control unit acquires characteristic information of each of the plurality of laser light sources, and performs a predetermined process according to each piece of acquired characteristic information.

The present invention discloses a metal oxide (MO) semiconductor, which is implemented by respectively doping at least an oxide of rare earth element R and an oxide of rare earth element R′ into an indium-containing MO semiconductor to form an In.sub.xM.sub.yR.sub.nR′.sub.mO.sub.z semiconductor. According to the present invention, the extremely high oxygen bond breaking energy in the oxide of rare earth element R is used to effectively control the carrier concentration in the semiconductor, and a charge transportation center can be formed by using the characteristic that the radius of rare earth ions is equivalent to the radius of indium ions, so that the electrical stability of the semiconductor is improved. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

A method of fan-out processing includes providing or obtaining a fused glass laminate sheet or wafer having a core layer and a first clad layer and a second clad layer, the core layer comprising a core glass having a core glass coefficient of thermal expansion α.sub.core, the first clad layer and the second clad layer each comprising a clad glass having a clad glass coefficient of thermal expansion α.sub.clad, where α.sub.clad>α.sub.core; affixing integrated circuit devices to the second clad layer of the laminate sheet or wafer; forming a fan-out layer on or above the integrated circuit devices; and removing some of the first clad layer to decrease warp of the sheet or wafer with integrated circuit devices and a fan-out layer thereon. A method of producing a laminate sheet or wafer having a selected CTE is also disclosed.

A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness h.sub.c.

A method for producing a transition metal dichalcogenide-graphene heterojunction composite, the method includes: transferring a graphene onto a flexile substrate; depositing a transition metal layer on the flexible substrate onto which the graphene has been transferred; and injecting a gas containing plasma-treated sulfur (S) onto the flexile substrate onto which the transition metal layer has been deposited, is disclosed.

An IGZO thin-film transistor and a method for manufacturing same. The method comprises: acquiring a substrate; forming an IGZO layer on the substrate by means of a solution process; doping V impurities on a surface of the IGZO layer by means of a spin doping process; forming a source electrode at one side of the IGZO layer, and forming a drain electrode at the other side thereof; forming a gate dielectric layer on the doped IGZO layer; and forming a gate electrode on the gate dielectric layer.

A thin film transistor according to an exemplary embodiment includes: a substrate; a semiconductor layer disposed on the substrate and including a channel region, and an input region and an output region disposed on both sides of the channel region and doped with an impurity; a buffer layer disposed between the substrate and the semiconductor layer; a control electrode overlapping the semiconductor layer; a gate insulation layer disposed between the semiconductor layer and the control electrode; and an input electrode connected to the input region and an output electrode connected to the output region, wherein the semiconductor layer includes polysilicon and is crystallized by a blue laser scan.

An electric field drives nanocrystals dispersed in solvents to assemble into ordered three-dimensional superlattices. A first electrode and a second electrode 214 are in the vessel. The electrodes face each other. A fluid containing charged nanocrystals fills the vessel between the electrodes. The electrodes are connected to a voltage supply which produces an electrical field between the electrodes. The nanocrystals will migrate toward one of the electrodes and accumulate on the electrode producing ordered nanocrystal accumulation that will provide a superlattice thin film, isolated superlattice islands, or coalesced superlattice islands.