A semiconductor structure, including: a base substrate; an insulating layer on the base substrate, the insulating layer having a thickness between about 5 nm and about 100 nm; and an active layer comprising at least two pluralities of different volumes of semiconductor material comprising silicon, germanium, and/or silicon germanium, the active layer disposed over the insulating layer, the at least two pluralities of different volumes of semiconductor material comprising: a first plurality of volumes of semiconductor material having a tensile strain of at least about 0.6%; and a second plurality of volumes of semiconductor material having a compressive strain of at least about −0.6%. Also described is a method of preparing a semiconductor structure and a segmented strained silicon on insulator device.

A method of forming a multitude of vertical NAND memory cells, includes, in part, forming a multitude of insulating materials on a silicon substrate, forming a trench in the insulating materials to expose a surface of the silicon substrate, depositing a layer of polysilicon along the sidewalls of the trench, filling the trench with oxide, forming a metal layer above the trench, and forming a mono-crystalline channel for the NAND memory cells by applying a voltage between the silicon substrate and the metal layer to cause the polysilicon sidewalls to melt. The melted polysilicon sidewalls is enable to recrystallize into the mono-crystalline channel.

There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to the substrate; and (b) forming a film containing silicon on the silicon seed layer by supplying a third gas containing silicon to the substrate, wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).

The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume being in fluid communication with a plasma source. The substrate can include a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method can also include forming an oxide cap layer over a silicon-containing layer of the channel structure and exposing the oxide cap layer to a hydrogen-or-deuterium radical to nucleate the silicon-containing layer of the channel structures of the substrate. Forming the oxide cap layer and exposing the channel structure with the hydrogen radical occurs in the first processing chamber to form a nucleated substrate. The method can also include positioning the nucleated substrate in a second processing chamber with a second processing volume and heating the nucleated substrate in the second processing chamber.

An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.

There is included (a) forming a chlorine-containing semiconductor layer on an insulating film provided on a surface of a substrate by supplying a first gas containing a semiconductor element and chlorine to the substrate; and (b) forming a semiconductor film on the chlorine-containing semiconductor layer by supplying a second gas containing a semiconductor element to the substrate, wherein a chlorine concentration in the chlorine-containing semiconductor layer formed in (a) is made 1.0×10.sup.20 atoms/cm.sup.3 or more and 1.0× 10.sup.22 atoms/cm.sup.3 or less.

IC device including back-end-of-line (BEOL) transistors with crystalline channel material. A BEOL crystalline seed may be formed over a dielectric layer that has been planarized over a front-end-of-line (FEOL) transistor level that employs a monocrystalline substrate semiconductor. The BEOL crystalline seed may be epitaxial to the substrate semiconductor, or may have crystallinity independent of that of the substrate semiconductor. The BEOL crystalline seed may comprise a first material having a higher melt temperature than a melt material formed over the seed and over the dielectric layer. Through rapid melt growth, the melt material may be heated to a temperature sufficient to transition from an as-deposited state to a more crystalline state that is derived from, and therefore associated with, the BEOL crystalline seed. A BEOL transistor may then be fabricated from the crystallized material.

A semiconductor device includes a substrate and a semiconductor layer. The substrate includes a planar portion and a plurality of pillars on a periphery of the planar portion. The pillars are shaped as rectangular columns, and corners of two of the pillars at the same side of the planar portion are aligned in a horizontal direction or a direction perpendicular to the horizontal direction. The semiconductor layer is disposed over the planar portion and between the pillars.

A method of manufacturing a semiconductor device includes forming a stacked structure, forming an opening in the stacked structure, forming a preliminary channel layer in the opening, forming a channel layer by performing heat treatment on the preliminary channel layer, etching an inner surface of the channel layer, and performing ozone (O.sub.3) treatment on an etched inner surface of the channel layer.

A rare earth-containing SiC substrate includes a rare earth element and Al. A concentration of the rare earth element is from 1×10.sup.16 atoms/cm.sup.3 to 1×10.sup.19 atoms/cm.sup.3 inclusive and a concentration of Al is from 1×10.sup.16 atoms/cm.sup.3 to 1×10.sup.21 atoms/cm.sup.3 inclusive.