A method of forming a crystalline silicon film includes forming a first amorphous silicon film on a substrate, forming a crystal nucleation film in which crystal nuclei of silicon are formed by performing a first annealing on the substrate having the first amorphous silicon film formed thereon, performing etching with an etching gas, forming a second amorphous silicon film on the crystal nuclei remaining after the etching, and forming a crystalline silicon film by performing a second annealing on the substrate after the forming of the second amorphous silicon film to grow the crystal nuclei.

The present disclosure provides a method of preparing a chalcogen containing solution that is hydrazine free and hydrazinium free, wherein the method comprises: providing a predetermined amount of elemental chalcogen; providing a predetermined amount of elemental sulfur; providing an amine solvent; and combining the predetermined amount of elemental chalcogen and the predetermined amount of elemental sulfur in the amine solvent, thereby dissolving the elemental chalcogen and the elemental sulfur in the amine solvent. The chalcogen containing solution can advantageously be used as a precursor for the formation of a chalcogen containing layer on a substrate.

A thin-film transistor comprises an annealed layer comprising crystalline zinc oxide. A passivation layer is adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer. The annealed layer has a thickness and threshold displacement energies after it has been annealed such that: a) a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and b) a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.

There is provided a technique, which includes: a process chamber where a substrate is processed; a microwave oscillator configured to supply microwaves to the process chamber; and a controller configured to be capable of controlling the microwave oscillator to perform: a heating process where the substrate is heated with a first microwave, among the supplied microwaves, supplied at a first microwave power so that a process of supplying the first microwave during a supply time and a process of stopping the supply of the first microwave during a stop time shorter than the supply time are performed a predetermined number of times or for a first predetermined time; and a modifying process in which the substrate is supplied with a second microwave, among the supplied microwaves, at a second microwave power higher than the first microwave power for a second predetermined time while maintaining the second microwave power.

Method of making a transistor, comprising the following steps: make a gate and a first spacer on a first channel region of a first crystalline semiconducting layer; make first crystalline semiconductor portions on the second source and drain regions; make the second regions amorphous and dope them; recrystallise the second regions and activate the dopants present in the second regions; remove the first portions; make a second spacer thicker than the first spacer; make second doped crystalline semiconductor portions on the second regions, said second portions and the second regions of the first layer together form the source and drain of the transistor.

The present invention provides a fabrication method of an oxide semiconductor thin film and a fabrication method of a thin film transistor, belongs to the field of display technology, and can solve the problem of high crystallization temperature and high difficulty in fabrication process of an oxide semiconductor thin film in the existing oxide thin film transistor. The fabrication method of an oxide semiconductor thin film of the present invention includes: forming an induction layer thin film on a substrate; and forming an oxide semiconductor thin film on the substrate formed with the induction layer thin film, and performing an annealing process on the oxide semiconductor thin film to crystallize the oxide semiconductor thin film.

There is provided a technique that includes: (a) forming a silicon seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a1) supplying a first gas containing halogen and silicon to the substrate; and (a2) supplying a second gas containing hydrogen to the substrate; and (b) forming a film containing silicon on the silicon seed layer by supplying a third gas containing silicon to the substrate, wherein a pressure of a space in which the substrate is located in (a2) is set higher than a pressure of the space in which the substrate is located in (a1).

Provided herein is a method of manufacturing a memory device. The method of manufacturing the memory device includes: forming a compensation layer over the channel layer, wherein an incubation time used for a nucleation of the compensation layer is shorter than an incubation time of the channel layer; and performing a heat treatment process for crystallizing the channel layer.

A semiconductor substrate includes a single crystal Ga.sub.2O.sub.3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga.sub.2O.sub.3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga.sub.2O.sub.3-based substrate.

An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.