A method and device for bonding a first substrate with a second substrate inside a sealed bonding chamber. The method includes: a) fixing of the first and second substrates, b) arranging of the first and second substrates, c) mutual approaching of the first and second substrates, d) contacting the first and second substrates at respective bond initiation points, e) generating a bonding wave running from the bond initiation points to side edges of the substrates, and f) influencing the bonding wave during course of the bonding wave, wherein targeted influencing of the bonding wave takes place by a regulated and/or controlled change of pressure inside the bonding chamber.

There is provided a bonding apparatus for bonding substrates together, which includes: a first holding part configured to adsorptively hold a first substrate by vacuum-drawing the first substrate on a lower surface of the first substrate; a second holding part provided below the first holding part and configured to adsorptively hold a second substrate by vacuum-drawing the second substrate on an upper surface of the second substrate; a pressing member provided in the first holding part and configured to press a central portion of the first substrate; and a plurality of substrate detection parts provided in the first holding part and configured to detect a detachment of the first substrate from the first holding part.

A method is disclosed that includes operations as follows: after forming an ion-implanted layer disposed between an epitaxial layer and a first semiconductor substrate, bounding the epitaxial layer to a bonding oxide layer without forming any layer between the epitaxial layer and the bonding oxide layer; and removing the first semiconductor substrate together with a portion of the ion-implanted layer and keeping a remaining portion of the ion-implanted layer on the epitaxial layer.

A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force F.sub.H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F.sub.H2; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature T.sub.H; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature T.sub.H is reduced at the second sample holder surface during the bonding.

Disclosed herein is an apparatus for processing a substrate that forms a hole in a substrate while reducing a burr in the hole so that a module device can be inserted into the hole to reduce the thickness of a display device, and the display device using the apparatus. The apparatus for processing the substrate comprises a body configured to operably be rotatable, and a cylindrical cutting tip at an end of the body. The bottom surface of the cutting tip is in an acute angle with respect to a contact surface of the substrate to allow formation of a groove at the substrate.

A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.

The present invention discloses a method for transferring a thin film from a first substrate to a second substrate comprising the steps of: providing a transfer structure and a thin film provided on a surface of a first substrate, the transfer structure comprising a support layer and a film contact layer, wherein the transfer structure contacts the thin film; removing the first substrate to obtain the transfer structure with the thin film in contact with the film contact layer; contacting the transfer structure obtained with a surface of a second substrate; and removing the film contact layer, thereby transferring the thin film onto the surface of the second substrate.

A method of fabricating a ceramic substrate structure includes providing a ceramic substrate, encapsulating the ceramic substrate in a barrier layer, and forming a bonding layer coupled to the barrier layer. The method further includes removing a portion of the bonding layer to expose at least a portion of the barrier layer and define fill regions, and depositing a second bonding layer on the at least a portion of the exposed barrier layer and the fill regions.

It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.

The present invention discloses a semiconductor-on-diamond-on-carrier substrate wafer. The semiconductor-on-diamond-on-carrier wafer comprises: a semiconductor-on-diamond wafer having a diamond side and semiconductor side; a carrier substrate disposed on the diamond side of the semiconductor-on-diamond wafer and including at least one layer having a lower coefficient of thermal expansion (CTE) than diamond; and an adhesive layer disposed between the diamond side of the semiconductor-on-diamond wafer and the carrier substrate to bond the carrier substrate to the semiconductor-on-diamond wafer. The semiconductor-on-diamond-on-carrier substrate wafer has the following characteristics: a total thickness variation of no more than 40 m; a wafer bow of no more than 100 m; and a wafer warp of no more than 40 m.