A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding layer is formed between the semiconductor disk and the base substrate. A second semiconductor layer of a second crystalline material with a second, different lattice system is formed by epitaxy on a first semiconductor layer formed from the semiconductor disk.

A method for producing a SiC composite substrate 10 having a single crystal SiC layer 12 on a polycrystalline SiC substrate 11. After the single crystal SiC layer 12 is provided on the front surface of a holding substrate 21 including Si and having a silicon oxide film 21a on the front and back surfaces thereof to produce a single crystal SiC layer supporting body 14, a part or all of the thickness of the silicon oxide film 21a on one area or all of the back surface of the holding substrate 21 in the single crystal SiC layer supporting body 14 is removed to impart warpage to the single crystal SiC layer supporting body 14. Then, polycrystalline SiC is deposited on the single crystal SiC layer 12 by chemical vapor deposition to form the polycrystalline SiC substrate 11, and the holding substrate is physically and/or chemically removed.

A bonded body includes a supporting body composed of a ceramic, a bonding layer provided over a surface of the supporting body and composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide, and a piezoelectric single crystal substrate bonded with the bonding layer. The surface of the supporting body has an arithmetic average roughness Ra of 0.5 nm or larger and 5.0 nm or smaller.

A substrate bonding apparatus that brings a part of a surface of a first substrate and a part of a surface of a second substrate into contact to form contact regions at the parts, and then enlarges the contact regions to bond the first substrate and the second substrate includes: a temperature adjusting unit that adjusts a temperature of at least one of the first substrate and the second substrate such that positional misalignment between the first substrate and the second substrate does not exceed a threshold at least in a course of enlargement of the contact regions.

A method for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters includes the following steps: providing a relaxation substrate that comprises a medium, a flow layer disposed on the medium and, a plurality of strained crystalline semiconductor islands having an initial lattice parameter located on the flow layer, a first group of islands having a first lattice parameter and a second group of islands having a second lattice parameter that is different from the first; and heat treating the relaxation substrate at a relaxation temperature greater than or equal to the glass transition temperature of the flow layer to cause differentiated lateral expansion of the islands of the first and second group. The lattice parameter of the relaxed islands of the first group and the relaxed islands of the second group then have different values.

The present disclosure provides a method for wafer bonding, including providing a wafer, forming a sacrificial layer on a top surface of the first wafer, trimming an edge of the first wafer to obtain a first wafer area, cleaning the top surface of the first wafer, removing the sacrificial layer, and bonding the top surface of the first wafer to a second wafer having a second wafer area greater than the first wafer area.

Systems and methods herein relate to the fabrication of a single-crystal flexible semiconductor template that may be attached to a semiconductor device. The template fabricated comprises a plurality of single crystals grown by lateral epitaxial growth on a seed layer and bonded to a flexible substrate. The layer grown has portions removed to create windows that add to the flexibility of the template.

Disclosed are a substrate bonding apparatus and a method of manufacturing a semiconductor device. The substrate bonding apparatus comprises vacuum pumps, a first chuck engaged with the vacuum pumps and adsorbing a first substrate at vacuum pressure of the vacuum pumps, and a pushing unit penetrating a center of the first chuck and pushing the first substrate away from the first chuck. The first chuck comprises adsorption sectors providing different vacuum pressures in an azimuth direction to the first substrate.

A bonding apparatus configured to bond substrates comprises a first holder configured to vacuum-exhaust a first substrate to attract and hold the first substrate on a bottom surface thereof; a second holder disposed under the first holder, and configured to vacuum-exhaust a second substrate to attract and hold the second substrate on a top surface thereof; a mover configured to move the first holder and the second holder relatively in a horizontal direction; a laser interferometer system configured to measure a position of the first holder or the second holder which is moved by the mover; a linear scale configured to measure a position of the mover; and a controller configured to control the mover based on a measurement result of the laser interferometer system and a measurement result of the liner scale.

A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250 C.