A method for producing a SiC composite substrate 10 having a single crystal SiC layer 12 on a polycrystalline SiC substrate 11. After the single crystal SiC layer 12 is provided on the front surface of a holding substrate 21 including Si and having a silicon oxide film 21a on the front and back surfaces thereof to produce a single crystal SiC layer supporting body 14, a part or all of the thickness of the silicon oxide film 21a on one area or all of the back surface of the holding substrate 21 in the single crystal SiC layer supporting body 14 is removed to impart warpage to the single crystal SiC layer supporting body 14. Then, polycrystalline SiC is deposited on the single crystal SiC layer 12 by chemical vapor deposition to form the polycrystalline SiC substrate 11, and the holding substrate is physically and/or chemically removed.

A GaN on diamond wafer and method for manufacturing the same is provided. The method comprising: disposing a GaN device or wafer on a substrate, having a nucleation layer disposed between the substrate and a GaN layer; affixing the device to a handling wafer; removing the substrate and substantially all the nucleation layer; and bonding the GaN layer to a diamond substrate.

The techniques described herein relate to an optoelectronic semiconductor light emitting device including a single crystal (Al.sub.xGa.sub.1-x).sub.2O.sub.3 substrate including a monoclinic or corundum crystal symmetry, where 0<x<1, and an optical emission region including an epitaxial oxide layer disposed on the single crystal (Al.sub.xGa.sub.1-x).sub.2O.sub.3 substrate. The optical emission region can be configured to emit light having a wavelength in a range from 150 nm to 425 nm. The techniques described herein also relate to a semiconductor structure including a single crystal (Al.sub.xGa.sub.1-x).sub.2O.sub.3 substrate including a monoclinic or corundum crystal symmetry, where 0<x<1, and an epitaxial oxide layer disposed on the single crystal (Al.sub.xGa.sub.1-x).sub.2O.sub.3 substrate. The epitaxial oxide layer can include a polar form of (Al.sub.yGa.sub.1-y).sub.2O.sub.3 with a hexagonal crystal symmetry, where 0?y?1.

The present disclosure provides a method for forming an epitaxial semiconductor layer including a step for providing a crystallization base member having a single crystal structure; a step for forming a semiconductor layer having one of an amorphous structure and a polycrystalline structure in contact with the crystallization base member; a step for forming a heating layer which may be heated by a laser on the semiconductor layer; a step for melting the semiconductor layer by heating the heating layer by irradiating a laser to the heating layer; and a step for forming a single crystallized epitaxial semiconductor layer from the semiconductor layer through single crystallization of the semiconductor layer according to the single crystalline structure of the crystallization base member by cooling the molten semiconductor layer.

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

The techniques described herein relate to a semiconductor structure including: a substrate, or a single crystal growth surface, including single crystal 4H-SiC(0001); a buffer layer on the single crystal growth surface; and an epitaxial oxide layer on the buffer layer. The buffer layer can include a crystal symmetry type that is compatible with the single crystal 4H-SiC(0001). The epitaxial oxide layer can include single crystal (Al.sub.xGa.sub.1-x).sub.2O.sub.3 with a monoclinic or corundum crystal symmetry, and where 0x1.

A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes: a first epitaxial layer including NiO; and a second epitaxial layer including a second epitaxial oxide material. In some cases, the semiconductor structure can include: a first region including p-type conductivity, wherein the first region includes the superlattice; a second region including an epitaxial oxide material; and a third region including an epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction.

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

Provided is a method for stripping a substrate of a semiconductor structure, including: providing a substrate, a first AlN layer, a first AlGaN layer and a function layer from bottom to top; and irradiating the first AlGaN layer from the substrate with laser light to decompose the first AlGaN layer, such that the function layer is separated from the substrate and the first AlN layer.

A bonding method including firstly bonding a first substrate to a second substrate by releasing a holding of the first substrate to form a first stack; and secondly bonding one substrate, which has been thinned, among the first substrate and the second substrate that have been bonded, to a third substrate, to form a second stack, wherein when the first substrate is thinned, the holding of the third substrate is released at the second bonding, and when the second substrate is thinned, the holding of the first stack is released at the second bonding.