The storage is configured to store model data generated based on data including, in patterns, a processing condition for substrate processing, an attitude of a movable part that affects a processing result of the substrate processing, and the processing result of the substrate processing. The processing controller is configured to use the model data stored in the storage to control the substrate processing, including control of the processing condition for the substrate processing and control of the attitude of the movable part, according to a condition to be satisfied by the processing result of the substrate processing.

There is provided a SiC substrate including a biaxially oriented SiC layer, wherein when analyzed by photoluminescence (PL) to obtain a graph by plotting PL intensity I as the vertical axis versus distance (?m) in the [11-20] direction as the horizontal axis, (i) the graph has a shape such that a maximum point and a minimum point are repeated, (ii) when a maximum value of PL intensity I at a maximum point P.sub.M is assumed to be M, and a minimum value of PL intensity I at a minimum point P.sub.m whose distance in the [11-20] direction is longer than that of the maximum point P.sub.M, and point P.sub.m being present at a position nearest to point P.sub.M, is assumed to be m, a ratio of M/m is 1.05 or more, and (iii) distance L in the [11-20] direction between point P.sub.M and point P.sub.m is 15 to 150 ?m.

This SiC epitaxial wafer includes a SiC epitaxial layer on a surface thereof, wherein results of irradiating the SiC epitaxial wafer with excitation light having a wavelength of 313 nm and measuring an emission intensity of photoluminescence light having a wavelength of 660 nm or more for each square measurement region of 2 mm on a side, which is obtained by dividing the surface, satisfy the following formula (1).

{(I.sub.MAX?I.sub.min)/I.sub.average}?100?40(%)(1) (I.sub.MAX: a maximum value of the emission intensity in the entire measurement region, I.sub.min: a minimum value of the emission intensity in the entire measurement region, and I.sub.average: an average value of the emission intensity of the entire measurement region)

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.

Examples herein relate to devices having substrates with selective airgap regions for mitigating defects resulting from heteroepitaxial growth of device materials. An example device may include a first semiconductor layer disposed on a substrate. The first semiconductor layer may have a window cut through a face, where etching a selective airgap region on the substrate is enabled via the window. A second semiconductor layer may be heteroepitaxially grown on the face of the first semiconductor layer so that at least a portion of the second semiconductor layer is aligned over the selective air gap region.

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.

A stacked structure includes an amorphous substrate, a buffer layer on the amorphous substrate, and a gallium nitride-based semiconductor layer on the buffer layer. The gallium nitride-based semiconductor layer includes at least one gallium nitride layer, and an oxygen concentration of the gallium nitride layer is less than 1?10.sup.21/cm.sup.3.

Provided are a film forming method in which oxygen defects are suppressed, and a substrate processing method. Provided is a film forming method having a step for cooling a substrate to a very-low-temperature state of 200 K or less, and a step for forming an oxide semiconductor film on the cooled substrate.

A film forming method includes: (A) preparing a substrate with a surface having a first region where a first film is exposed, and a second region where a second film formed by a material different from the first film is exposed; (B) forming a stepped portion in the surface such that the first region becomes higher than the second region; (C) supplying a liquid to the surface where the stepped portion is formed; and (D) supplying, to the surface, a processing gas that chemically changes the liquid, and moving the liquid from the second region to the first region by a reaction between the processing gas and the liquid to selectively form a film in the first region with respect to the second region.